Versatile Metal Nanowiring Platform for Large-Scale Nano- and Opto-Electronic Devices.

A versatile metal nanowiring platform enables the fabrication of Ag nanowires (AgNW) at a desired position and orientation in an individually controlled manner. A printed, flexible AgNW has a diameter of 695 nm, a resistivity of 5.7 µΩ cm, and good thermal stability in air. Based on an Ag nanowiring platform, an all-NW transistors array, as well as various optoelectronic applications, are successfully demonstrated.

High Performance Metal Oxide Field-Effect Transistors with a Reverse Offset Printed Cu Source/Drain Electrode.

Nonvacuum and photolithography-free copper (Cu) films were prepared by reverse offset printing. The mechanical, morphological, structural, and chemical properties of the Cu films annealed at different temperatures were examined in detail. The Ostwald ripening-induced coalescence and grain growth in the printing Cu films were enhanced with increasing annealing temperature in N2 ambient up to 400 °C. Simultaneously, unwanted chemical impurities such as oxygen, hydrogen, and carbon in the Cu films decreased as the annealing temperature increased. The high electrical conductivity (∼6.2 µΩ·cm) of the printing Cu films annealed at 400 °C is attributed to the enlargement of the grain size and reduction of the incorporation of impurities. A printing Cu film was adopted as a source/drain (S/D) electrode in solution processable zinc tin oxide (ZTO) field-effect transistors (FETs), where the ZTO film was prepared by simple spin-coating. The ZTO FETs fabricated at a contact annealing temperature of 250 °C exhibited a promising field-effect mobility of 2.6 cm(2)/(V s), a threshold voltage of 7.0 V, and an ION/OFF modulation ratio of 2 × 10(5).