Dual Interactive Mode Human-Machine Interfaces Based on Triboelectric Nanogenerator and IGZO/In2O3 Heterojunction Synaptic Transistor.

Imitating human neural networks via bio-inspired electronics advances human-machine interfaces (HMI), overcoming von Neumann limitations and enabling efficient, low-energy data processing in the big data era. However, single-contact mode HMIs have inherent limitations in terms of their capabilities and performances, such as constrained adaptability to dynamic environments, and reduced cognitive processing capabilities. Here, a dual-interactive-mode HMI system based on a triboelectric nanogenerator (TENG) and heterojunction synaptic transistor (HJST) is proposed for both contact and non-contact applications. The TENG incorporates a poly-methyl meth-acrylate (PMMA)-NiCo2S4/S film, in which the NiCo2S4/S composite traps and blocks electrons to optimize charge generation and storage. The heterojunction structure, mitigates the Debye screening effect, thereby improving transistor characteristics and reliability. The integrated TENG-HJST system exhibits synaptic functions, including excitatory/inhibitory postsynaptic current (EPSC/IPSC), paired-pulse facilitation/depression (PPF/PPD), and synaptic plasticity, enabling emulation of neural behavior and advanced information processing. Moreover, neural morphology manipulation is demonstrated in practical tasks, such as controlling international chess games. By integrating the TENG-HJST device with a robotic hand, conscious artificial responses are generated, enhancing event accuracy. This breakthrough in dual-interactive-mode interfacing holds promise for HMI systems and neural prostheses.

Anisotropic sensing based on single ReS2flake for VOCs discrimination.

Selective and sensitive detection of volatile organic compounds (VOCs) holds paramount importance in real-world applications. This study proposes an innovative approach utilizing a single ReS2field-effect transistor (FET) characterized by distinct in-plane anisotropy, specifically tailored for VOC recognition. The unique responses of ReS2, endowed with robust in-plane anisotropic properties, demonstrate significant difference along thea-axis andb-axis directions when exposed to four kinds of VOCs: acetone, methanol, ethanol, and IPA. Remarkably, the responses of ReS2were significantly magnified under ultraviolet (UV) illumination, particularly in the case of acetone, where the response amplified by 10-15 times and the detection limit decreasing from 70 to 4 ppm compared to the dark conditions. Exploiting the discernible variances in responses along thea-axis andb-axis under both UV and dark conditions, the data points of acetone, ethanol, methanol and IPA gases were clearly separated in the principal component space without any overlap through principal component analysis, indicating that the single ReS2FET has a high ability to distinguish various gas species. The exploration of anisotropic sensing materials and light excitation strategies can be applied to a broad range of sensing platforms based on two-dimensional materials for practical applications.

Flexible In-Ga-Zn-N-O synaptic transistors for ultralow-power neuromorphic computing and EEG-based brain-computer interfaces.

Designing low-power and flexible artificial neural devices with artificial neural networks is a promising avenue for creating brain-computer interfaces (BCIs). Herein, we report the development of flexible In-Ga-Zn-N-O synaptic transistors (FISTs) that can simulate essential and advanced biological neural functions. These FISTs are optimized to achieve ultra-low power consumption under a super-low or even zero channel bias, making them suitable for wearable BCI applications. The effective tunability of synaptic behaviors promotes the realization of associative and non-associative learning, facilitating Covid-19 chest CT edge detection. Importantly, FISTs exhibit high tolerance to long-term exposure under an ambient environment and bending deformation, indicating their suitability for wearable BCI systems. We demonstrate that an array of FISTs can classify vision-evoked EEG signals with up to ∼87.9% and 94.8% recognition accuracy for EMNIST-Digits and MindBigdata, respectively. Thus, FISTs have enormous potential to significantly impact the development of various BCI techniques.

Engineering of Oxidized Line Defects on CVD-Grown MoS2 Flakes.

Defect engineering is a promising means to create patterns on two-dimensional (2D) materials to enable unconventional properties. However, defects usually exist abundantly and randomly on 2D materials, which makes it difficult to tune the properties in a controllable manner. Therefore, it is highly desirable to find out the formation mechanism and controllable fabrication method of defects on 2D materials. In this report, we systematically investigated the line defects on monolayer MoS2 formed by introducing oxygen during the CVD growth. The line defects were formed due to the overoxidation of the MoS2 flake along crystal boundaries, which bulged out of the surface and had the same surface potential as the basal plane. Therefore, the MoS2 flake with line defects maintained the optical and electrical integrity but exhibited distinct properties as compared to the pristine one. By controlling the oxygen concentration during CVD growth, the density of the line defects can be precisely controlled to implement controllable property tuning. Moreover, during the transfer process, the MoS2 flake was easily broken along the line defects, which increased the active sites to achieve enhanced hydrogen evolution reaction performance. This work is expected to inspire the development of patterned functional 2D materials by defect engineering.

Dielectric engineering enable to lateral anti-ambipolar MoTe2heterojunction.

Atomically two-dimensional (2D) materials have generated widespread interest for novel electronics and optoelectronics. Specially, owing to atomically thin 2D structure, the electronic bandgap of 2D semiconductors can be engineered by manipulating the surrounding dielectric environment. In this work, we develop an effective and controllable approach to manipulate dielectric properties of h-BN through gallium ions (Ga+) implantation for the first time. And the maximum surface potential difference between the intrinsic h-BN (h-BN) and the Ga+implanted h-BN (Ga+-h-BN) is up to 1.3 V, which is characterized by Kelvin probe force microscopy. More importantly, the MoTe2transistor stacked on Ga+-h-BN exhibits p-type dominated transfer characteristic, while the MoTe2transistor stacked on the intrinsic h-BN behaves as n-type, which enable to construct MoTe2heterojunction through dielectric engineering of h-BN. The dielectric engineering also provides good spatial selectivity and allows to build MoTe2heterojunction based on a single MoTe2flake. The developed MoTe2heterojunction shows stable anti-ambipolar behaviour. Furthermore, we preliminarily implemented a ternary inverter based on anti-ambipolar MoTe2heterojunction. Ga+implantation assisted dielectric engineering provides an effective and generic approach to modulate electric bandgap for a wide variety of 2D materials. And the implementation of ternary inverter based on anti-ambipolar transistor could lead to new energy-efficient logical circuit and system designs in semiconductors.

Modulation of MoTe2/MoS2 van der Waals heterojunctions for multifunctional devices using N2O plasma with an opposite doping effect.

van der Waals layered heterojunctions have a variety of band offsets that open up possibilities for a wide range of novel and multifunctional devices. However, due to their poor pristine carrier concentrations and limited band modulation methods, multifunctional p-n heterojunctions are very difficult to achieve. In this report, we developed a highly effective N2O plasma process to treat MoTe2/MoS2 heterojunctions. This allowed us to adjust the hole and electron concentrations in the two materials independently and simultaneously. More importantly, for the first time, we were able to create opposite doping on the two sides of the junction through a single-step treatment. With a very wide doping range from pristine to degenerate levels, a MoTe2/MoS2 heterojunction can be modulated to behave as a forward rectifying diode with enhanced rectifying ratio and as a tunneling transistor with negative differential resistance at room temperature. The new approach provides an effective and generic doping scheme for heterojunctions to construct versatile and multifunctional electronic devices.

UV light modulated synaptic behavior of MoTe2/BN heterostructure.

Electrical synaptic devices are the basic components for the hardware based neuromorphic computational systems, which are expected to break the bottleneck of current von Neumann architecture. So far, synaptic devices based on three-terminal transistors are considered to provide the most stable performance, which usually use gate pulses to modulate the channel conductance through a floating gate and/or charge trapping layer. Herein, we report a three-terminal synaptic device based on a two-dimensional molybdenum ditelluride (MoTe2)/hexagonal boron nitride (hBN) heterostructure. This structure enables stable and prominent conductance modulation of the MoTe2channel by the photo-induced doping method through electron migration between the MoTe2channel and ultraviolet (UV) light excited mid-gap defect states in hBN. Therefore, it is free of the floating gate and charge trapping layer to reduce the thickness and simplify the fabrication/design of the device. Moreover, since UV illumination is indispensable for stable doping in MoTe2channel, the device can realize both short- (without UV illumination) and long- (with UV illumination) term plasticity. Meanwhile, the introduction of UV light allows additional tunability on the MoTe2channel conductance through the wavelength and power intensity of incident UV, which may be important to mimic advanced synaptic functions. In addition, the photo-induced doping method can bidirectionally dope MoTe2channel, which not only leads to large high/low resistance ratio for potential multi-level storage, but also implement both potentiation (n-doping) and depression (p-doping) of synaptic weight. This work explores alternative three-terminal synaptic configuration without floating gate and charge trapping layer, which may inspire researches on novel electrical synapse mechanisms.

Multi-level flash memory device based on stacked anisotropic ReS2-boron nitride-graphene heterostructures.

Charge-trapping memory devices based on two-dimensional (2D) material heterostructures possess an atomically thin structure and excellent charge transport capability, making them promising candidates for next-generation flash memories to achieve miniaturized size, high storage capacity, fast switch speed, and low power consumption. Here, we report a nonvolatile floating-gate memory device based on an ReS2/boron nitride/graphene heterostructure. The implemented ReS2 memory device displays a large memory window exceeding 100 V, leading to an ultrahigh current ratio over 108 between programming and erasing states. The ReS2 memory device also exhibits an ultrafast switch speed of 1 µs. In addition, the device can endure hundreds of switching cycles and shows stable retention characteristics with ∼40% charge remaining after 10 years. More importantly, taking advantage of its anisotropic electrical properties, a single ReS2 flake can achieve direction-sensitive multi-level data storage to enhance the data storage density. On the basis of these characteristics, the proposed ReS2 memory device is potentially able to serve the entire memory device hierarchy, meeting the need for scalability, capacity, speed, retention, and endurance at each level.

Tunable and nonvolatile multibit data storage memory based on MoTe2/boron nitride/graphene heterostructures through contact engineering.

Heterostructures formed by stacking atomically thin two-dimensional materials are promising candidates for flash memory devices to achieve premium performances, due to the capability of effective carrier modulation and unique charge trapping behavior at the interfaces with atomic flatness. Here, we report a nonvolatile floating-gate flash memory based on MoTe2/h-BN/graphene van der Waals heterostructure, which possesses increased data storage capacity per cell and versatile tunability. The decent memory behavior of the device is enabled by the carriers stored in the floating gate of graphene layer, which tunnel through the dielectric layer of h-BN from the channel layer of MoTe2 under static-electrical field. Consequently, the developed memory device is capable to store 2 bits per cell by applying varied gate bias to implement multi-distinctive current levels. The device also exhibits remarkable erase/program current ratio of ∼105 with 1 µs switch speed and stable retention with estimated ∼30% charge loss after 10 yr. Furthermore, the memory device can operate in both p- and n-type modes through contact engineering, offering wide adaptability for emerging applications in electronic technologies, such as neuromorphic computing, data-adaptive energy efficient memory, and complex digital circuits.

Dynamically controllable polarity modulation of MoTe2 field-effect transistors through ultraviolet light and electrostatic activation.

Energy band engineering is of fundamental importance in nanoelectronics. Compared to chemical approaches such as doping and surface functionalization, electrical and optical methods provide greater flexibility that enables continuous, reversible, and in situ band tuning on electronic devices of various kinds. In this report, we demonstrate highly effective band modulation of MoTe2 field-effect transistors through the combination of electrostatic gating and ultraviolet light illumination. The scheme can achieve reversible doping modulation from deep n-type to deep p-type with ultrafast switching speed. The treatment also enables noticeable improvement in field-effect mobility by roughly 30 and 2 times for holes and electrons, respectively. The doping scheme also provides good spatial selectivity and allows the building of a photo diode on a single MoTe2 flake with excellent photo detection and photovoltaic performances. The findings provide an effective and generic doping approach for a wide variety of 2D materials.

Photoinduced Doping To Enable Tunable and High-Performance Anti-Ambipolar MoTe2/MoS2 Heterotransistors.

van der Waals (vdW) p-n heterojunctions formed by two-dimensional nanomaterials exhibit many physical properties and deliver functionalities to enable future electronic and optoelectronic devices. In this report, we demonstrate a tunable and high-performance anti-ambipolar transistor based on MoTe2/MoS2 heterojunction through in situ photoinduced doping. The device demonstrates a high on/off ratio of 105 with a large on-state current of several micro-amps. The peak position of the drain-source current in the transfer curve can be adjusted through the doping level across a large dynamic range. In addition, we have fabricated a tunable multivalue inverter based on the heterojunction that demonstrates precise control over its output logic states and window of midlogic through source-drain bias adjustment. The heterojunction also exhibits excellent photodetection and photovoltaic performances. Dynamic and precise modulation of the anti-ambipolar transport properties may inspire functional devices and applications of two-dimensional nanomaterials and their heterostructures of various kinds.

Gate-Tunable Photodetection/Voltaic Device Based on BP/MoTe2 Heterostructure.

van der Waals heterostructures based on two-dimensional (2D) materials have attracted tremendous attention for their potential applications in optoelectronic devices, such as solar cells and photodetectors. In addition, the widely tunable Fermi levels of these atomically thin 2D materials enable tuning the device performances/functions dynamically. Herein, we demonstrated a MoTe2/BP heterostructure, which can be dynamically tuned to be either p-n or p-p junction by gate modulation due to compatible band structures and electrically tunable Fermi levels of MoTe2 and BP. Consequently, the electrostatic gating can further accurately control the photoresponse of this heterostructure in terms of the polarity and the value of photoresponsivity. Besides, the heterostructure showed outstanding photodetection/voltaic performances. The optimum photoresponsivity, external quantum efficiency, and response time as a photodetector were 0.2 A/W, 48.1%, and 2 ms, respectively. Our study enhances the understanding of 2D heterostructures for designing gate-tunable devices and reveals promising potentials of these devices in future optoelectronic applications.

Specific and Highly Sensitive Detection of Ketone Compounds Based on p-Type MoTe2 under Ultraviolet Illumination.

The selective and sensitive detection of chemical agents is demanded by a wide range of practical applications. In particular, sensing of volatile organic compounds (VOCs) at parts-per-billion level is critical for environmental monitoring, process control, and early diagnosis of human diseases. In this report, we demonstrate a specific and highly sensitive detection of ketone compounds using two-dimensional (2D) molybdenum ditelluride (MoTe2). We investigated the effects of UV activation on the sensing performance to a variety of VOCs. It is found that the MoTe2 field-effect transistor (FET) exhibits an opposite sensing response to ketone compounds before and after UV light activation, whereas the responses to other types of VOCs remain in the same direction regardless of the illumination. This unique behavior enables the discriminative detection of ketone molecules including acetone and pentanone from other VOCs in a gas mixture. The activation of UV light also results in a very high sensitivity and low detection limit toward acetone (∼0.2 ppm). Moreover, the MoTe2 FET shows a stable sensing performance in a high humidity environment. The results demonstrate the potential of MoTe2 as a promising candidate for high-performance acetone sensors in important applications such as human breath analysis. The scheme of light-tunable sensing can be applied to a broad range of sensing platforms based on 2D materials.

Ultrasensitive and Fully Reversible NO2 Gas Sensing Based on p-Type MoTe2 under Ultraviolet Illumination.

The unique properties of two-dimensional (2D) materials make them promising candidates for chemical and biological sensing applications. However, most 2D material sensors suffer from extremely long recovery time due to the slow molecular desorption at room temperature. Here, we report an ultrasensitive p-type molybdenum ditelluride (MoTe2) gas sensor for NO2 detection with greatly enhanced sensitivity and recovery rate under ultraviolet (UV) illumination. Specifically, the sensitivity of the sensor to NO2 is dramatically enhanced by 1 order of magnitude under 254 nm UV illumination as compared to that in the dark condition, leading to a remarkable low detection limit of 252 ppt. More importantly, the p-type MoTe2 sensor can achieve full recovery after each sensing cycle well within 160 s at room temperature. Finally, the p-type MoTe2 sensor also exhibits excellent sensing performance to NO2 in ambient air and negligible response to H2O, indicating its great potential in practical applications, such as breath analysis and ambient NO2 detection. Such impressive features originate from the activated interface interaction between the gas molecules and p-type MoTe2 surface under UV illumination. This work provides a promising and easily applicable strategy to improve the performance of the gas sensors based on 2D materials.

Highly-sensitive gas sensor based on two-dimensional material field effect transistor.

Atomically thin two-dimensional (2D) materials are ideal gas sensing materials for achieving an ultra-low detection limit, due to the high surface-to-volume ratio, low electronic noise and sensitively tunable Fermi level. However, the sensitivity of 2D materials to their surrounding environment may also severely degrade the long-term stability of sensing devices, since most of them use the same 2D material flake as both the sensing and conduction material. In this work, we report a gas sensor based on a 2D material field effect transistor (FET) which uses few-layer black phosphorus (BP), boron nitride (BN) and molybdenum disulfide (MoS2) as the top-gate, dielectric layer and conduction channel, respectively. In this device configuration, the top-gate of BP with a superior gas adsorption capability serves as the sensing material, while the conduction channel of MoS2 is isolated from ambient environment by the coverage of the BN dielectric layer. The separation of the sensing and conduction materials not only improves the long-term stability of the device, but also enables us to use different materials for gas adsorption and conduction purposes to achieve optimum sensing performances. In addition, the adsorption kinetics of the gas molecules on the sensing channel can be sensitively detected by the current/resistance variation of the conduction channel, since the adsorbed gas molecules can effectively tune the Fermi level of sensing and conduction materials (BP and MoS2, respectively) through band alignment. We experimentally demonstrated that the proposed 2D material FET not only achieved a detection limit of 3.3 ppb to NO2, but was also capable to differentiate oxidizing and reducing gases.

Enhancing electronic and optoelectronic performances of tungsten diselenide by plasma treatment.

Transition metal dichalcogenides (TMDCs) have recently become spotlighted as nanomaterials for future electronic and optoelectronic devices. In this work, we develop an effective approach to enhance the electronic and optoelectronic performances of WSe2-based devices by N2O plasma treatment. The hole mobility and sheet density increase by 2 and 5 orders of magnitude, reaching 110 cm2 V-1 s-1 and 2.2 × 1012 cm-2, respectively, after the treatment. At the same time, the contact resistance (Rc) between WSe2 and its metal electrode drop by 5 orders of magnitude from 1.0 GΩ µm to 28.4 kΩ µm. The WSe2 photoconductor exhibits superior performance with high responsivity (1.5 × 105 A W-1), short response time (<2 ms), high detectivity (3.6 × 1013 Jones) and very large photoconductive gain (>106). We have also built a lateral p-n junction on a single piece of WSe2 flake by selective plasma exposure. The junction reaches an exceedingly high rectifying ratio of 106, an excellent photoresponsivity of 2.49 A W-1 and a fast response of 8 ms. The enhanced optoelectronic performance is attributed to band-engineering through the N2O plasma treatment, which can potentially serve as an effective and versatile approach for device engineering and optimization in a wide range of electronic and optoelectronic devices based on 2D materials.

Acoustically enhanced photodetection by a black phosphorus-MoS2 van der Waals heterojunction p-n diode.

We developed a new way to enhance the photoresponsivity of a van der Waals heterojunction p-n diode using surface acoustic waves (SAWs). The diode was constructed on top of a piezoelectric LiNbO3 substrate and composed of p-type black phosphorus (BP) and n-type molybdenum disulfide (MoS2) flakes that partly overlapped with each other. This layout facilitated the applied SAWs to rapidly drive carriers out of the depletion region. In this structural design, SAWs promoted the separation of photogenerated carriers, and thus greatly increased the photocurrent. The measured photocurrent for the device with SAWs was about 103 times higher than that of the device without SAWs. The device using SAWs showed a photoresponsivity as high as 2.17 A W-1 at the wavelength of 582 nm. This excellent performance was attributed to the SAWs suppressing electron-hole recombination in the device under light illumination. Our device exhibits promise as a high-performance photodetector and reveals new possibilities for acoustic devices in optoelectronics.

Volatile organic compounds discrimination based on dual mode detection.

We report on a volatile organic compound (VOC) sensor that can provide concentration-independent signals toward target gases. The device is based on a dual-mode detection mechanism that can simultaneously record the mechanical (resonant frequency, f r) and electrical (current, I) responses of the same gas adsorption event. The two independent signals form a unique I-f r trace for each target VOC as the concentration varies. The mechanical response (frequency shift, Δf r) resulting from mass load on the device is directly related to the amount of surface adsorptions, while the electrical response (current variation, ΔI) is associated with charge transfer across the sensing interface and changes in carrier mobility. The two responses resulting from independent physical processes reflect intrinsic physical properties of each target gas. The ΔI-Δf r trace combined with the concentration dependent frequency (or current) signals can therefore be used to achieve target both recognition and quantification. The dual-mode device is designed and fabricated using standard complementary metal oxide semiconductor (CMOS) compatible processes. It exhibits consistent and stable performance in our tests with six different VOCs including ethanol, methanol, acetone, formaldehyde, benzene and hexane.

The effect of air stable n-doping through mild plasma on the mechanical property of WSe2 layers.

Two-dimensional transition metal dichalcogenides have been widely applied to electronic and optoelectronic device owing to their remarkable material properties. Many studies present the platform for regulating the contact resistance via various doping schemes. Here, we report the alteration of mechanical properties of few top layers of the WSe2 flake which are processed by air stable n-doping of N2O with a constant gas flow through mild plasma and present better manufacturability and friability. The single-line nanoscratching experiments on the WSe2 flakes with different doping time reveal that the manufacturable depths are positively correlated with the exposure time at a certain range and tend to be stable afterwards. Meanwhile, material characterization by x-ray photoelectron spectroscopy confirms that the alteration of mechanical properties is owing to the creation of Se vacancies and substitution of O atoms, which breaks the primary molecular structure of the WSe2 flakes. The synchronous Kelvin probe force microscopy and topography results of ROI nanoscratching of a stepped WSe2 sample confirmed that the depth of the degenerate doping is five layers, which was consistent with the single-line scratching experiments. Our results reveal the interrelationship of the mechanical property, chemical bonds and work function changes of the doped WSe2 flakes.

Contact Engineering of Molybdenum Ditelluride Field Effect Transistors through Rapid Thermal Annealing.

Understanding and engineering the interface between metal and two-dimensional materials are of great importance to the research and development of nanoelectronics. In many cases the interface of metal and 2D materials can dominate the transport behavior of the devices. In this study, we focus on the metal contacts of MoTe2 (molybdenum ditelluride) FETs (field effect transistors) and demonstrate how to use post-annealing treatment to modulate their transport behaviors in a controlled manner. We have also carried out low temperature and transmission electron microscopy studies to understand the mechanisms behind the prominent effect of the annealing process. Changes in transport properties are presumably due to anti-site defects formed at the metal-MoTe2 interface under elevated temperature. The study provides more insights into MoTe2 field effect devices and suggests guidelines for future optimizations.