Local-field engineering in slot waveguide for fabricating on-chip Bragg grating filters with high reflectivity across a flat broadband.

On-chip Bragg gratings with high reflectivities have been found to have widespread applications in filters, resonators, and semiconductor lasers. However, achieving strong Bragg reflections with flat response across a broad bandwidth on the popular 220 nm silicon-on-insulator (SOI) platform still remains a challenge. In this paper, such a high performance device is proposed and fabricated, which is based on a slot waveguide with gratings etched on the inner sidewalls of the slot. By manipulating the local field in the slot region using a chirped and tapered grating-based mode transition, the device achieves a flat response with ultra-high reflection and low transmission for the TE mode across a broad operating bandwidth. Leveraging the ultra-high birefringence of the SOI waveguide, the device functions both as a TE slot waveguide reflector and a TM pass polarizer. Simulation results demonstrate that the device exhibits an ultra-high rejection of more than 50 dB and a reflectivity exceeding 0.99 for the TE mode across a 91 nm wavelength range, while maintaining a high transmittance of larger than 0.98 for the TM mode. Experimental results validate that the device performance is consistent with the simulation results. A fabricated device based on such a gratings exhibits a low insertion loss (<0.8 dB) and high polarization extinction ratio (>30 dB) over 100 nm bandwidth (1484 nm-1584 nm), demonstrating that the performance of the present design is competitive with that of the state-of-the-art SOI Bragg gratings.

2†µm band four-wavelength-switchable narrow linewidth fiber laser enabled by fs-laser direct-written polarization-dependent parallel fiber Bragg gratings.

We propose and experimentally demonstrate a four-wavelength-switchable single-longitudinal-mode (SLM) narrow linewidth thulium-holmium co-doped fiber laser (THDFL) using two polarization-dependent parallel fiber Bragg gratings (PD-PFBGs). The PD-PFBGs, fabricated using femtosecond (fs) laser direct-writing technology in a standard single-mode fiber (SMF) via a point-by-point method, are used as a four-channel reflection filter. Two FBGs are inscribed in parallel in the fiber core along the axial direction and are uniquely positioned symmetrically on either side of the centerline. This configuration enables polarization-dependent multi-channel filtering capability, which further allows for polarization-control-based four-wavelength-switchable operations of the THDFL. SLM lasing is accomplished by utilizing a simple dual-ring sub-cavity filter. An exceptional output performance of the THDFL is achieved, including an optical signal-to-noise ratio (SNR) of >72 dB, maximum power and wavelength fluctuations of 0.350 dB and 0.024 nm, respectively, and a linewidth of <2 kHz, for all four single-wavelength operations lasing at ∼2000 nm. These performance indicators suggest that the THDFL can be applied in free-space optical communication, atmospheric monitoring, and Lidar.

Compact and broadband dual-polarization waveguide crossing utilizing subwavelength-hole-assisted MMI couplers.

In this Letter, an ultracompact silicon-based waveguide crossing for dual polarizations is proposed and experimentally demonstrated using subwavelength-hole-assisted multimode interference couplers. Thanks to the flexible and easy dispersion engineering in the introduced subwavelength-hole-assisted multimode interference couplers, the reduced and equal beat lengths for dual polarizations are accessible via careful parametric optimization, consequently enabling a substantially reduced device size. Experimental results indicate that the proposed crossing (13.6 × 13.6 µm2 in size) features a low insertion loss of 1.03 dB (0.76 dB) and low crosstalk of -32.5 dB (-37.8 dB) at a central wavelength of 1550 nm for TE (TM) mode, with a broad bandwidth of ∼80 nm for crosstalk of <-18 dB.

All-silicon TM polarizer covering the 1260-1675†nm bandwidth using a band engineered subwavelength grating waveguide.

A TM polarizer working for whole optical communication bands with high performance is proposed on a 220-nm-thick silicon-on-insulator (SOI) platform. The device is based on polarization-dependent band engineering in a subwavelength grating waveguide (SWGW). By utilizing an SWGW with a relatively larger lateral width, an ultra-broad bandgap of ∼476 nm (1238 nm-1714nm) is obtained for the TE mode, while the TM mode is well supported in this range. Then, a novel tapered and chirped grating design is adopted for efficient mode conversion, which results in a polarizer with a compact footprint (3.0 µm × 18 µm), low insertion loss (IL < 1.15 dB) and high polarization extinction ratio (PER > 21 dB) covering O-U bands (1260 nm-1675 nm). Experimental results show that the fabricated device has an IL < 1.0 dB and PER > 22 dB over a 300- nm bandwidth, which is limited by our measurement setup. To the best of our knowledge, no TM polarizer on the 220-nm SOI platform with comparable performance covering O-U bands has ever been reported.

Experimental demonstration of a flexible and high-performance mode-order converter using subwavelength grating metamaterials.

Mode-order converters, transforming a given mode into the desired mode, have an important implication for the multimode division multiplexing technology. Considerable mode-order conversion schemes have been reported on the silicon-on-insulator platform. However, most of them can only convert the fundamental mode to one or two specific higher-order modes with low scalability and flexibility, and the mode conversion between higher-order modes cannot be achieved unless a total redesign or a cascade is carried out. Here, a universal and scalable mode-order converting scheme is proposed by using subwavelength grating metamaterials (SWGMs) sandwiched by tapered-down input and tapered-up output tapers. In this scheme, the SWGMs region can convert, TEp mode guided from a tapered-down taper, into a TE0-like-mode-field (TLMF) and vice versa. Thereupon, a TEp-to-TEq mode conversion can be realized by a two-step process of TEp-to-TLMF and then TLMF-to-TEq, where input tapers, output tapers, and SWGMs are carefully engineered. As examples, the TE0-to-TE1, TE0-to-TE2, TE0-to-TE3, TE1-to-TE2, and TE1-to-TE3 converters, with ultracompact lengths of 3.436-7.71 µm, are reported and experimentally demonstrated. Measurements exhibit low insertion losses of < 1.8 dB and reasonable crosstalks of < -15 dB over 100-nm, 38-nm, 25-nm, 45-nm, and 24-nm working bandwidths. The proposed mode-order converting scheme shows great universality/scalability for on-chip flexible mode-order conversions, which holds great promise for optical multimode based technologies.

Ultra-compact and broadband all-silicon TM-pass power splitter using subwavelength holey-structured metamaterial waveguides.

Power splitters with polarization management features are highly desired to construct high-density silicon photonic integrated circuits. However, few attempts have been made to design a single device that can act as both a power splitter and a TE- or TM-pass polarizer. In this paper, for the first time, we experimentally demonstrate an ultra-compact and broadband all-silicon TM-pass power splitter, where a triple-guide directional coupler (TGDC) composed of three parallel subwavelength holey-structured metamaterial waveguides (SHMWs) is located at central coupling region and three regular strip waveguides are connected at the input/output ports. Such a SHMW can enhance the reflection to realize a wide stop-band for the undesired TE polarized light, while achieving the low loss transmission for the TM polarized light. Besides, the TM dispersion can be significantly flattened by the designed SHMWs, leading to a broadband power splitting for TM polarization. Simulated results show that an ultra-compact device of 1.7 × 4 µm2 in size is obtained with an insertion loss (IL) of 0.34 dB and an extinction ratio (ER) of 36 dB at 1550 nm, and its working bandwidth can be extended to ∼240 nm by keeping IL < 0.9 dB and ER > 16 dB. The measurements of the fabricated devices show low IL (<1 dB) and high ER (>15 dB) over the measured wavelength range of 1460 to 1580 nm, which is consistent with the simulation results.

Highly scalable and flexible on-chip all-silicon mode filter using backward mode conversion gratings.

Mode filters are fundamental elements in a mode-division multiplexing (MDM) system for reducing modal cross-talk or realizing modal routing. However, the previously reported silicon mode filters can only filter one specific mode at a time and multiple modes filtering usually needs a cascade of several filters, which is adverse to highly integrated MDM systems. Here, we propose a unique concept to realize compact, scalable and flexible mode filters based on backward mode conversion gratings elaborately embedded in a multimode waveguide. Our proposed method is highly scalable for realizing a higher-order-mode-pass or band-mode-pass filter of any order and capable of flexibly filtering one or multiple modes simultaneously. We have demonstrated the concept through the design of four filters for different order of mode(s) and one mode demultiplexer based on such a filter, and the measurement of two fabricated 11µm length filters (TE1-pass/TE2-pass) show that an excellent performance of insertion loss <1.0dB/1.5dB and extinction ratio >29dB/28.5dB is achieved over a bandwidth of 51.2nm/48.3nm, which are competitive with the state-of-the-art.

Compact and ultra-broadband all-silicon TM-pass and TE-reflected polarizer using grating based weakly coupled nanowires.

On-chip silicon polarizers with broad operating bandwidth and compact footprint have recently attracted increasing attention for their applications in large capacity and high density integrated optical systems. However, strong waveguide dispersion usually limits the bandwidth of the silicon polarizers, especially for the TM-pass polarizers. In this paper, we overcome the bandwidth limit of the TM polarizer by utilizing a novel waveguide structure composed of two weakly coupled nanowires with gratings sandwiched in between. Such a structure can effectively enlarge the bandgap for the undesired TE polarized light, while act as a low loss subwavelength metamaterial for TM polarized light over an extremely large wavelength range. In simulation, we obtain a compact polarizer of 13.6 µm × 1.3 µm in size with an ultra-broad operating bandwidth of ∼362 nm for extinction ratios (ERs) >21 dB and insertion losses (ILs) <1 dB, which covers E-, S-, C-, L-, and U-bands and part of O-band. The measurements of fabricated devices show that the device performed well in the test wavelength range from 1300 to 1600 nm with an ER >15 dB and an average IL ∼1 dB, consistent with the simulation results. This work paves a new way for designing compact and ultra-broadband on-chip polarizers.

Low loss and high extinction ratio all-silicon TM-pass polarizer with reflection removal enabled by contra-mode conversion Bragg-gratings.

Bragg-gratings have been frequently used to design compact and high extinction ratio (ER) on-chip polarizers. However, the strong reflection of the unwanted polarization may deteriorate the performance of the light source or cause unwanted interferences. In this paper, we propose a Bragg-grating-based all-silicon TM-pass polarizer with low reflection, low insertion loss (IL) and high ER. Unlike previously reported polarizers based on single mode waveguides, we construct the Bragg grating with a multimode waveguide, which not only acts as a Bragg reflector, but also a mode-order converter to convert the reflected TE light into higher order modes to be eventually filtered out by utilizing a tapered transition. On the other hand, the grating has little adverse influence on the TM input light since it works at sub-wavelength-guided wave propagation regime. Finally, the polarizer obtained has a length of 30µm, an ER of 51.83dB, an IL of 0.08dB, and an operating bandwidth of ∼61nm for ER > 30dB at the wavelength of 1.55µm. More importantly, the reflection of the unwanted polarization is suppressed to -12.6dB, which can be further lowered via additional design optimization. Our work points to a new direction for making better on-chip polarizers.

Wavelength-switchable ultra-narrow linewidth fiber laser enabled by a figure-8 compound-ring-cavity filter and a polarization-managed four-channel filter.

We propose and demonstrate a high-performance wavelength-switchable erbium-doped fiber laser (EDFL), enabled by a figure-8 compound-ring-cavity (F8-CRC) filter for single-longitudinal-mode (SLM) selection and a polarization-managed four-channel filter (PM-FCF) for defining four lasing wavelengths. We introduce a novel methodology utilizing signal-flow graph combined with Mason's rule to analyze a CRC filter in general and apply it to obtain the important design parameters for the F8-CRC used in this paper. By combining the functions of the F8-CRC filter and the PM-FCF assisted by the enhanced polarization hole-burning and polarization dependent loss, we achieve the EDFL with fifteen lasing states, including four single-, six dual-, four tri- and one quad-wavelength lasing operations. In particular, all the four single-wavelength operations are in stable SLM oscillation, typically with a linewidth of <600 Hz, a RIN of ≤-154.58 dB/Hz@≥3 MHz and an output power fluctuation of ≤±3.45%. In addition, all the six dual-wavelength operations have very similar performances, with the performance parameters close to those of the four single-wavelength operations, superior to our previous work and others' similar work significantly. Finally, we achieve the wavelength-spacing tuning of dual-wavelength operations for photonic generation of tunable microwave signals, and successfully obtain a signal at 23.10 GHz as a demonstration.

Compact cross-slot waveguide polarization beam splitter using a sandwich-type coupler.

A compact silicon-based cross-slot waveguide (CSW) polarization beam splitter (PBS) utilizing a sandwich-type coupler is proposed. The coupler consists of two identical CSWs separated by a horizontal slot waveguide (HSW), and S-bend sections at each end of the coupling section are introduced to decouple and separate the light. Owing to the strong birefringence of the HSW, the coupling length ratio between two different polarized modes (TE and TM) is adjustable in a suitable range by simply changing the gap width between the CSW and the HSW. The coupling length of the TM mode can be easily made half of that of the TE mode with a proper gap width, which is a favorable condition to realize a short PBS. Then, by making the length of the coupling section equal to the coupling length of the TE mode, the TE and TM modes are split. The PBS has the advantages of a small footprint and a high polarization extinction ratio (PER) and may be useful in the polarization management of a CSW-based on-chip optical system. Numerical results indicate that a PBS of ∼12µm with an insertion loss (IL) of 0.17 (0.53) dB, PER of 24.12 (21.14) dB for the TM (TE) mode is achieved at the wavelength of 1.55 µm, with a bandwidth covering the full C band for keeping PER>15dB and IL<1dB.

Four-wavelength-switchable SLM fiber laser with sub-kHz linewidth using superimposed high-birefringence FBG and dual-coupler ring based compound-cavity filter.

We propose and demonstrate a four-wavelength-switchable erbium-doped fiber laser (4WS-EDFL) with a four-channel superimposed high-birefringence fiber Bragg grating (SI-HBFBG) and a dual-coupler ring based compound-cavity (DCR-CC) filter. Both for the first time, a SI-HBFBG as a four-channel reflective filter is used in a multi-wavelength switchable fiber laser to define wavelength channels and a DCR-CC filter is used to select a single mode from dense longitudinal-modes in a fiber laser. We present in detail how to design, fabricate, and characterize the DCR-CC filter with both theoretical analysis and experimental results, which we believe is the first systematic approach for making a compound-cavity based filter used for selecting single-longitudinal mode (SLM) in a fiber laser. The enhanced polarization hole burning effect in a 2.9 m long erbium-doped fiber, coiled inside a three-loop polarization controller, and the polarization-mismatch-induced losses are introduced into the laser cavity to achieve wavelength-switching operations. We show that the 4WS-EDFL can be switched among fifteen lasing states, including four single-wavelength operations, six dual-wavelength operations, four three-wavelength operations and one four-wavelength operation, all with high stability. For demonstration, in switchable single-wavelength operations, the four SLM lasing outputs measured are all with an optical signal to noise ratio of >80 dB, a linewidth of <700 Hz, a relative intensity noise of ≤-156.7 dB/Hz at frequencies over 3 MHz, an output power fluctuation of ≤0.555 dB and excellent polarization characteristics.

Distributed polarization analysis with binary polarization rotators for the accurate measurement of distance-resolved birefringence along a single-mode fiber.

We describe a first distributed polarization analysis (DPA) system using binary polarization rotators in an optical frequency domain reflectormeter (OFDR) capable of measuring the variations of polarization states along a single-mode fiber (SMF). We demonstrate using such a DPA system to accurately measure the distance-resolved birefringence with 12 fiber loops of different radii with different birefringence values along a length of SMF and obtain a bending-induced birefringence coefficient (BBC) of 6.601 × 10-10 m2, agreeing well with the theoretically estimated value of 5.334 × 10-10 m2. To further verify the measurement accuracy, we obtain the birefringence values of the 12 fiber loops of different radii one at a time using a non-distributed polarization analysis system with an accuracy traceable to a birefringence standard made with a quartz crystal, and obtain a BBC value of 6.490 × 10-10 m2, agreeing well with our distributed measurement with a relative error of only 1.68%. In addition, we measure the residual birefringence of the SMF with both distributed and non-distributed polarization analysis systems and obtain similar results with a relative error of only 0.59%. Our experiments not only validate the performances of our DPA system, but also the first to use DPA to experimentally obtain the accurate birefringence values along the SMF and verify the theory of bending-induced birefringence. Our work further proves that such an OFDR-based DPA system is a practical tool for optical component characterization, nondestructive optical material inspection, and distributed fiber optic transversal stress sensing.

Compact polarization rotator for silicon-based cross-slot waveguides using subwavelength gratings.

A compact and broadband polarization rotator (PR) for silicon-based cross-slot waveguides using subwavelength gratings (SWGs) is proposed and analyzed. To significantly break the symmetry of the waveguide structure, the diagonal regular Si wires of the cross-slot waveguides are replaced with the full etching SWGs. Moreover, the special properties of the SWGs-whose effective index is adjustable-can effectively enhance the modal birefringence between the two lowest-order hybrid modes, resulting in a more compact device. By utilizing interference effect of the hybrid modes, both transverse electric to transverse magnetic (TE-to-TM) and TM-to-TE conversion can be efficiently realized. Numerical results show that a PR of 12.6 µm in length at a wavelength of 1.55 µm is achieved, where the polarization conversion efficiency (PCE) and insertion loss (IL) are, respectively, 97.2% and 0.71 dB, and the reflection loss is below -20.5 dB for both cases. Moreover, a wide bandwidth of ∼260 nm for both polarizations is obtained for keeping the PCE over 90% and IL below 1 dB. In addition, fabrication tolerances to the structural parameters are analyzed in detail, and field evolution along the propagation distance is also presented.

Inhibition of 5-lipoxygenase triggers apoptosis in pancreatic cancer cells.

The 5-lipoxygenase (5-LOX) pathway has been associated with a variety of inflammatory diseases including asthma, atherosclerosis, rheumatoid arthritis, cancer and liver fibrosis. Several classes of 5-LOX inhibitors have been identified, but only one drug, zileuton, a redox inhibitor of 5-LOX, has been approved for clinical use. In the present study, 5-LOX was found to be overexpressed not only in pancreatic cancer cell lines but also in tissue samples of patients suffering from pancreatic adenocarcinoma. There was a close correlation between the tumor expression levels of 5-LOX mRNA and protein and the clinicopathological patient characteristics including lymph node metastasis and TNM stage. Zileuton suppressed the proliferation of SW1990 cells in a concentration- and time­dependent manner. In addition, zileuton induced SW1990 cells to undergo apoptosis and significantly decreased 5-LOX expression. The number of apoptotic cells, estimated by flow cytometry, Annexin V/PI assay, TUNEL staining and sub­diploid population was significantly higher than that of the control. These results suggest that the level of 5-LOX expression was increased in pancreatic cancer tissues and may be related to lymph node metastasis and TNM stage.

Apoptosis of human pancreatic cancer cells induced by Triptolide.

AIM: To investigate apoptosis in human pancreatic cancer cells induced by Triptolide (TL), and the relationship between this apoptosis and expression of caspase-3' bcl-2 and bax. METHODS: Human pancreatic cancer cell line SW1990 was cultured in DMEM media for this study. MTT assay was used to determine the cell growth inhibitory rate in vitro. Flow cytometry and TUNEL assay were used to detect the apoptosis of human pancreatic cancer cells before and after TL treatment. RT-PCR was used to detect the expression of apoptosis-associated gene caspase-3' bcl-2 and bax. RESULTS: TL inhibited the growth of human pancreatic cancer cells in a dose-and time-dependent manner. TL induced human pancreatic cancer cells to undergo apoptosis with typically apoptotic characteristics. TUNEL assay showed that after the treatment of human pancreatic cancer cells with 40 ng/mL TL for 12 h and 24 h, the apoptotic rates of human pancreatic cancer cells increased significantly. RT-PCR demonstrated that caspase-3 and bax were significantly up-regulated in SW1990 cells treated with TL while bcl-2 mRNA was not. CONCLUSION: TL is able to induce the apoptosis in human pancreatic cancer cells. This apoptosis may be mediated by up-regulating the expression of apoptosis-associated caspase-3 and bax gene.