In-situ twistable bilayer graphene.

The electrical and optical properties of twisted bilayer graphene (tBLG) depend sensitively on the twist angle. To study the angle dependent properties of the tBLG, currently it is required fabrication of a large number of samples with systematically varied twist angles. Here, we demonstrate the construction of in-situ twistable bilayer graphene, in which the twist angle of the two graphene monolayers can be in-situ tuned continuously in a large range with high precision. The controlled tuning of the twist angle is confirmed by a combination of real-space and spectroscopic characterizations, including atomic force microscopy (AFM) identification of crystal lattice orientation, scanning near-field optical microscopy (SNOM) imaging of superlattice domain walls, and resonant Raman spectroscopy of the largely enhanced G-mode. The developed in-situ twistable homostructure devices enable systematic investigation of the twist angle effects in a single device, thus could largely advance the research of twistronics.

The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology.

With the development of industrial civilization, advanced manufacturing technology has attracted widespread concern, including in the aerospace industry. In this paper, we report the applications of ultra-thin atomic layer deposition nanofilm in the advanced aerospace manufacturing industry, including aluminum anti-oxidation and secondary electron suppression, which are critical in high-power and miniaturization development. The compact and uniform aluminum oxide film, which is formed by thermal atomic layer deposition (ALD), can prevent the deep surface oxidation of aluminum during storage, avoiding the waste of material and energy in repetitive production. The total secondary electron yield of the C/TiN component nanofilm, deposited through plasma-enhanced atomic layer deposition, decreases 25% compared with an uncoated surface. The suppression of secondary electron emission is of great importance in solving the multipactor for high-power microwave components in space. Moreover, the controllable, ultra-thin uniform composite nanofilm can be deposited directly on the complex surface of devices without any transfer process, which is critical for many different applications. The ALD nanofilm shows potential for promoting system performance and resource consumption in the advanced aerospace manufacturing industry.

Direct imaging of interlayer-coupled symmetric and antisymmetric plasmon modes in graphene/hBN/graphene heterostructures.

Much of the richness and variety of physics today are based on coupling phenomena where multiple interacting systems hybridize into new ones with completely distinct attributes. Recent development in building van der Waals (vdWs) heterostructures from different 2D materials provides exciting possibilities in realizing novel coupling phenomena in a designable manner. Here, with a graphene/hBN/graphene heterostructure, we report near-field infrared nano-imaging of plasmon-plasmon coupling in two vertically separated graphene layers. Emergent symmetric and anti-symmetric coupling modes are directly observed simultaneously. Coupling and decoupling processes are systematically investigated with experiment, simulation and theory. The reported interlayer plasmon-plasmon coupling could serve as an extra degree of freedom to control light propagation at the deep sub-wavelength scale with low loss and provide exciting opportunities for optical chip integration.

Effect of Sputtering Temperature on Fluorocarbon Films: Surface Nanostructure and Fluorine/Carbon Ratio.

In this work, fluorocarbon film was deposited on silicon (P/100) substrate using polytetrafluoroethylene (PTFE) as target material at elevated sputtering temperature. Field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) were employed to investigate the surface morphology as well as structural and chemical compositions of the deposited film. The surface energy, as well as the polar and dispersion components, were determined by water contact angle (WCA) measurement. The experimental results indicated that increasing sputtering temperature effectively led to higher deposition rate, surface roughness and WCA of the film. It was found that the elevated temperature contributed to increasing saturated components (e.g., C-F2 and C-F3) and decreasing unsaturated components (e.g., C-C and C-CF), thus enhancing the fluorine-to-carbon (F/C) ratio. The results are expected aid in tailoring the design of fluorocarbon films for physicochemical properties.

Graphene-Contacted Ultrashort Channel Monolayer MoS2 Transistors.

2D semiconductors are promising channel materials for field-effect transistors (FETs) with potentially strong immunity to short-channel effects (SCEs). In this paper, a grain boundary widening technique is developed to fabricate graphene electrodes for contacting monolayer MoS2 . FETs with channel lengths scaling down to ≈4 nm can be realized reliably. These graphene-contacted ultrashort channel MoS2 FETs exhibit superior performances including the nearly Ohmic contacts and excellent immunity to SCEs. This work provides a facile route toward the fabrication of various 2D material-based devices for ultrascaled electronics.

Thermally Induced Graphene Rotation on Hexagonal Boron Nitride.

In this Letter, we report the observation of thermally induced rotation of graphene on hexagonal boron nitride (h-BN). After the rotation, two thermally stable configurations of graphene on h-BN with a relative lattice twisting angle of 0° (most stable) and 30° (metastable), respectively, were found. Graphene on h-BN with a twisting angle below (above) a critical angle of ∼12±2° tends to rotate towards 0° (30°) at a temperature of >100 °C, which is in line with our theoretical simulations. In addition, by manipulating the annealing temperature and the flake sizes of graphene, moiré superlattices with large spatial periods of graphene on h-BN are achieved. Our studies provide a detailed understanding of the thermodynamic properties of graphene on h-BN and a feasible approach to obtaining van der Waals heterostructures with aligned lattices.

Hofstadter Butterfly and Many-Body Effects in Epitaxial Graphene Superlattice.

Graphene placed on hexagonal boron nitride (h-BN) has received a wide range of interest due to the improved electrical performance and rich physics from the interface, especially the emergence of superlattice Dirac points as well as Hofstadter butterfly in high magnetic field. Instead of transferring graphene onto h-BN, epitaxial growth of graphene directly on a single-crystal h-BN provides an alternative and promising way to study these interesting superlattice effects due to their precise lattice alignment. Here we report an electrical transport study on epitaxial graphene superlattice on h-BN with a period of ∼15.6 nm. The epitaxial graphene superlattice is clean, intrinsic, and of high quality with a carrier mobility of ∼27 000 cm(2) V(-1) s(-1), which enables the observation of Hofstadter butterfly features originated from the superlattice at a magnetic field as low as 6.4 T. A metal-insulator transition and magnetic field dependent Fermi velocity were also observed, suggesting prominent electron-electron interaction-induced many-body effects.

Observation of Strong Interlayer Coupling in MoS2/WS2 Heterostructures.

Epitaxial growth of A-A and A-B stacking MoS2 on WS2 via a two-step chemical vapor deposition method is reported. These epitaxial heterostructures show an atomic clean interface and a strong interlayer coupling, as evidenced by systematic characterization. Low-frequency Raman breathing and shear modes are observed in commensurate stacking bilayers for the first time; these can serve as persuasive fingerprints for interfacial quality and stacking configurations.

Tunable piezoresistivity of nanographene films for strain sensing.

Graphene-based strain sensors have attracted much attention recently. Usually, there is a trade-off between the sensitivity and resistance of such devices, while larger resistance devices have higher energy consumption. In this paper, we report a tuning of both sensitivity and resistance of graphene strain sensing devices by tailoring graphene nanostructures. For a typical piezoresistive nanographene film with a sheet resistance of ∼100 KΩ/□, a gauge factor of more than 600 can be achieved, which is 50× larger than those in previous studies. These films with high sensitivity and low resistivity were also transferred on flexible substrates for device integration for force mapping. Each device shows a high gauge factor of more than 500, a long lifetime of more than 10(4) cycles, and a fast response time of less than 4 ms, suggesting a great potential in electronic skin applications.

Scalable growth of high-quality polycrystalline MoS(2) monolayers on SiO(2) with tunable grain sizes.

We report a scalable growth of monolayer MoS2 films on SiO2 substrates by chemical vapor deposition. As-grown polycrystalline MoS2 films are continuous over the entire substrate surface with a tunable grain size from ∼20 nm up to ∼1 µm. An obvious blue-shift (up to 80 meV) of photoluminescence peaks was observed from a series samples with different grain sizes. Back-gated field effect transistors based on a polycrystalline MoS2 film with a typical grain size of ∼600 nm shows a field mobility of ∼7 cm(2)/(V s) and on/off ratio of ∼10(6), comparable to those achieved from exfoliated MoS2. Our work provides a route toward scaled-up synthesis of high-quality monolayer MoS2 for electronic and optoelectronic devices.

A general route towards defect and pore engineering in graphene.

Defect engineering in graphene is important for tailoring graphene's properties thus applicable in various applications such as porous membranes and ultra-capacitors. In this paper, we report a general route towards defect- and pore- engineering in graphene through remote plasma treatments. Oxygen plasma irradiation was employed to create homogenous defects in graphene with controllable density from a few to ≈10(3) (µm(-2)). The created defects can be further enlarged into nanopores by hydrogen plasma anisotropic etching with well-defined pore size of a few nm or above. The achieved smallest nanopores are ≈2 nm in size, showing the potential for ultra-small graphene nanopores fabrication.

A route toward digital manipulation of water nanodroplets on surfaces.

Manipulation of an isolated water nanodroplet (WN) on certain surfaces is important to various nanofluidic applications but challenging. Here we present a digital nanofluidic system based on a graphene/water/mica sandwich structure. In this architecture, graphene provides a flexible protection layer to isolate WNs from the outside environment, and a monolayer ice-like layer formed on the mica surface acts as a lubricant layer to allow these trapped WNs to move on it freely. In combination with scanning probe microscope techniques, we are able to move, merge, and separate individual water nanodroplets in a controlled manner. The smallest manipulatable water nanodroplet has a volume down to yoctoliter (10(-24) L) scale.

Tunable electroluminescence in planar graphene/SiO(2) memristors.

Electroluminescence and resistive switching are first realized simultaneously in graphene/SiO2 memristor devices. The electroluminescence peaks can be tuned between 550 nm and 770 nm reliably via setting the device to different resistance states by applying different voltages. The combination of resistive switching and electroluminescence may bring new functionalities for these memristor devices which are fully compatible with silicon-based electronics.

Epitaxial growth of single-domain graphene on hexagonal boron nitride.

Hexagonal boron nitride (h-BN) has recently emerged as an excellent substrate for graphene nanodevices, owing to its atomically flat surface and its potential to engineer graphene's electronic structure. Thus far, graphene/h-BN heterostructures have been obtained only through a transfer process, which introduces structural uncertainties due to the random stacking between graphene and h-BN substrate. Here we report the epitaxial growth of single-domain graphene on h-BN by a plasma-assisted deposition method. Large-area graphene single crystals were successfully grown for the first time on h-BN with a fixed stacking orientation. A two-dimensional (2D) superlattice of trigonal moiré pattern was observed on graphene by atomic force microscopy. Extra sets of Dirac points are produced as a result of the trigonal superlattice potential and the quantum Hall effect is observed with the 2D-superlattice-related feature developed in the fan diagram of longitudinal and Hall resistance, and the Dirac fermion physics near the original Dirac point is unperturbed. The macroscopic epitaxial graphene is in principle limited only by the size of the h-BN substrate and our synthesis method is potentially applicable on other flat surfaces. Our growth approach could thus open new ways of graphene band engineering through epitaxy on different substrates.

Graphene edge lithography.

Fabrication of graphene nanostructures is of importance for both investigating their intrinsic physical properties and applying them into various functional devices. In this paper, we report a scalable fabrication approach for graphene nanostructures. Compared with conventional lithographic fabrication techniques, this new approach uses graphene edges as the templates or masks and offers advantage in technological simplicity and capability of creating small features below 10 nm scale. Moreover, mask layers used in the fabrication process could be simultaneously used as the dielectric layers for top-gated devices. The as-fabricated graphene nanoribbons (GNRs) are of high quality with the carrier mobility ∼400 cm(2)/(V s) for typical 15 nm wide ribbons. Our technique allows easy and reproducible fabrication of various graphene nanostructures, such as ribbons and rings, and can be potentially extended to other materials and systems by use of their edges or facets as templates.

Growth, characterization, and properties of nanographene.

A systematic study on nanographene grown directly on silicon dioxide substrates is reported. The growth is carried out in a remote plasma-enhanced chemical vapor deposition system at a low temperature of around 550 °C with methane gas as the carbon source. Atomic force microscopy is used to characterize the nanographene morphology, and Raman spectroscopy, X-ray photoelectron spectroscopy, and scanning tunneling microscopy are exploited to identify the in-plane sp(2) bonding structures of nanographene samples. Electrical transport properties are measured at various temperatures down to 4 K. Tunneling effects, minimal conductance at the charge-neutral point, sheet resistances, and Dirac point position at different channel lengths are investigated. In addition, nanographene film possesses high transmittance properties, as indicated by transmittance spectra. Nanographene devices are fabricated from rippled structures, and show great promise for strain-gauge sensor applications.