Surface coupling in Bi2Se3 ultrathin films by screened Coulomb interaction.

Single-particle band theory has been very successful in describing the band structure of topological insulators. However, with decreasing thickness of topological insulator thin films, single-particle band theory is insufficient to explain their band structures and transport properties due to the existence of top and bottom surface-state coupling. Here, we reconstruct this coupling with an equivalently screened Coulomb interaction in Bi2Se3 ultrathin films. The thickness-dependent position of the Dirac point and the magnitude of the mass gap are discussed in terms of the Hartree approximation and the self-consistent gap equation. We find that for thicknesses below 6 quintuple layers, the magnitude of the mass gap is in good agreement with the experimental results. Our work provides a more accurate means of describing and predicting the behaviour of quasi-particles in ultrathin topological insulator films and stacked topological systems.

Dual Topology of Dirac Electron Transport and Photogalvanic Effect in Low-Dimensional Topological Insulator Superlattices.

Dual topological insulators, simultaneously protected by time-reversal symmetry and crystalline symmetry, open great opportunities to explore different symmetry-protected metallic surface states. However, the conventional dual topological states located on different facets hinder integration into planar opto-electronic/spintronic devices. Here, dual topological superlattices (TSLs) Bi2 Se3 -(Bi2 /Bi2 Se3 )N with limited stacking layer number N are constructed. Angle-resolved photoelectron emission spectra of the TSLs identify the coexistence and adjustment of dual topological surface states on Bi2 Se3 facet. The existence and tunability of spin-polarized dual-topological bands with N on Bi2 Se3 facet result in an unconventionally weak antilocalization effect (WAL) with variable WAL coefficient α (maximum close to 3/2) from quantum transport experiments. Most importantly, it is identified that the spin-polarized surface electrons from dual topological bands exhibit circularly and linearly polarized photogalvanic effect (CPGE and LPGE). It is anticipated that the stacked dual-topology and stacking layer number controlled bands evolution provide a platform for realizing intrinsic CPGE and LPGE. The results show that the surface electronic structure of the dual TSLs is highly tunable and well-regulated for quantum transport and photoexcitation, which shed light on engineering for opto-electronic/spintronic applications.

Drag effect induced large anisotropic damping behavior in magnetic thin films with strong magnetic anisotropy.

The determination of intrinsic Gilbert damping is one of the central interests in the field of spintronics. However, some external factors in magnetic films tend to play a remarkable role in the magnetization dynamics. Here, we present a comprehensive study of the magnetic relaxation in ferromagnetic films with various in-plane magnetic anisotropy via ferromagnetic resonance technique. We find that the magnetic drag effect can result in the resonant linewidth broadening and the nonlinear dependence of linewidth on frequency stemming from field-magnetization misalignment. As a result, this could lead to the imprecise extraction of the key dynamic parameter-Gilbert damping and cause the confusing behaviors of ultra-low and anisotropic damping in thin films and multi-layers with high magnetic anisotropy. Our results provide a crucial way for the accurately quantitative estimation of the Gilbert damping in spintronics measurements.

Three-Dimensional Limit of Bulk Rashba Effect in Ferroelectric Semiconductor GeTe.

Ferroelectric Rashba semiconductors (FERSCs) have recently attracted intensive attention due to their giant bulk Rashba parameter, αR, which results in a locking between the spin degrees of freedom and the switchable electric polarization. However, the integration of FERSCs into microelectronic devices has provoked questions concerning whether the Rashba effect can persist when the material thickness is reduced to several nanometers. Here we find that αR can keep a large value of 2.12 eV Å in the 5.0 nm thick GeTe film. The behavior of αR with thickness can be expressed by the scaling law and provides a 3D thickness limit of the bulk Rashba effect, dc = 2.1 ± 0.5 nm. Finally, we find that the thickness can modify the Berry curvature as well, which influences the polarization and consequently alters the αR. Our results give insight into understanding the factors influencing αR in FERSCs and pave a novel route for designing Rashba-type quantum materials.

Characterizing the Magnetic Interfacial Coupling of the Fe/FeGe Heterostructure by Ferromagnetic Resonance.

We characterize the magnetic interfacial coupling of the Fe/FeGe heterostructure and its influence on the magnetic damping via ferromagnetic resonance in the temperature range of 200-300 K. When the temperature is below the critical temperature of FeGe, the interfacial coupling rises. The strength of the magnetic interfacial coupling is determined as a function of the temperature and reaches up to 0.194 erg/cm2 at 200 K. Meanwhile, the Gilbert damping of the Fe layer is enhanced from 0.035 at 300 K to 0.050 at 200 K. The enhancement is linearly proportional to the strength of magnetic interfacial coupling. We attribute the enhancement to the interfacial coupling that transfers spin angular momentum from Fe to FeGe via the exchange interaction. Our results reveal that the interfacial coupling is an effective approach to inject spin current into the chiral spin texture.

Large Tunable Spin-to-Charge Conversion Induced by Hybrid Rashba and Dirac Surface States in Topological Insulator Heterostructures.

Topological insulators (TIs) have emerged as some of the most efficient spin-to-charge convertors because of their correlated spin-momentum locking at helical Dirac surface states. While endeavors have been made to pursue large "charge-to-spin" conversions in novel TI materials using spin-torque-transfer geometries, the reciprocal process "spin-to-charge" conversion, characterized by the inverse Edelstein effect length (λIEE) in the prototypical TI material (Bi2Se3), remains moderate. Here, we demonstrate that, by incorporating a "second" spin-splitting band, namely, a Rashba interface formed by inserting a bismuth interlayer between the ferromagnet and the Bi2Se3 (i.e., ferromagnet/Bi/Bi2Se3 heterostructure), λIEE shows a pronounced increase (up to 280 pm) compared with that in pure TIs. We found that λIEE alters as a function of bismuth interlayer thickness, suggesting a new degree of freedom to manipulate λIEE by engineering the interplay of Rashba and Dirac surface states. Our finding launches a new route for designing TI- and Rashba-type quantum materials for next-generation spintronic applications.