Electric field control of resistive switching and magnetization in epitaxial LaBaCo2O5+δ thin films.

The low operating temperature and volatile characteristics of the magnetization change are the main obstacles for the practical applications of spintronic and magnetic memories. In this work, both the resistive switching and magnetization switching are realized in Pt/LaBaCo2O5+δ (LBCO)/Nb-doped SrTiO3 (Nb-STO) devices at room temperature through an electric field. Unlike the traditional approach of an external stress inducing a volatile magnetization change, the magnetization in the Pt/LBCO/Nb-STO device is modulated by an electrical field, along with the resistive switching. The resistive and magnetization switching can be attributed to the variation of the depletion layer width at the LBCO/Nb-STO interface via oxygen vacancy migration and the increase/decrease of the Co-O-Co bond length, respectively. The present device with the synchronous manipulation of both resistance and magnetization at room temperature can be applied in nonvolatile resistive memories and novel magnetic multifunctional devices.

Quasi-Hodgkin-Huxley Neurons with Leaky Integrate-and-Fire Functions Physically Realized with Memristive Devices.

Artificial neurons with functions such as leaky integrate-and-fire (LIF) and spike output are essential for brain-inspired computation with high efficiency. However, previously implemented artificial neurons, e.g., Hodgkin-Huxley (HH) neurons, integrate-and-fire (IF) neurons, and LIF neurons, only achieve partial functionality of a biological neuron. In this work, quasi-HH neurons with leaky integrate-and-fire functions are physically demonstrated with a volatile memristive device, W/WO3 /poly(3,4-ethylenedioxythiophene): polystyrene sulfonate/Pt. The resistive switching behavior of the device can be attributed to the migration of protons, unlike the migration of oxygen ions normally involved in oxide-based memristors. With multifunctions similar to their biological counterparts, quasi-HH neurons are advantageous over the reported HH and LIF neurons, demonstrating their potential for neuromorphic computing applications.

Photonic Potentiation and Electric Habituation in Ultrathin Memristive Synapses Based on Monolayer MoS2.

Monolayer of 2D transition metal dichalcogenides, with a thickness of less than 1 nm, paves a feasible path to the development of ultrathin memristive synapses, to fulfill the requirements for constructing large-scale high density 3D stacking neuromorphic chips. Herein, memristive devices based on monolayer n-MoS2 on p-Si substrate with a large self-rectification ratio, exhibiting photonic potentiation and electric habituation, are successfully fabricated. Versatile synaptic neuromorphic functions, such as potentiation/habituation, short-term/long-term plasticity, and paired-pulse facilitation, are successfully mimicked based on the inherent persistent photoconductivity performance and the volatile resistive switching behavior. These findings demonstrate the potential applications of ultrathin transition metal dichalcogenides for memristive synapses. These memristive synapses with the combination of photonic and electric neuromorphic functions have prospective in the applications of synthetic retinas and optoelectronic interfaces for integrated photonic circuits based on mixed-mode electro-optical operation.