I kappa B kinase interacting protein as a promising biomarker in pan-cancer: A multi-omics analysis.

Background: Human chromosome 12 contains I kappa B kinase interacting protein (IKBIP) is also commonly known as IKIP. The involvement of IKBIP in the growth of tumors has only been discussed in a small number of publications. Purpose: To explore the role that IKBIP plays in the development of a wide variety of neoplasms, as well as the tumor immunological microenvironment. Methods: UALCAN, HPA, Genotype Tissue Expression, Cancer Genome Maps, and other datasets were used to analyze IKBIP expression. We thoroughly investigated the predictive importance of IKBIP in pan-cancer, clinical traits, and genetic anomalies. We studied whether there is a link between IKBIP and immune-related genes, microsatellite instability (MSI), and the incidence of tumor mutational burden (TMB). The link between immune cell infiltration and IKBIP expression was examined using data on immune cell infiltration from ImmuCellAI, TIMER2, and earlier studies. Finally, gene set enrichment analysis (GSEA) was performed to determine the signaling pathways associated with IKBIP. Results: IKBIP is highly expressed in most cancers and is negatively associated with the prognosis of several major cancer types. Furthermore, IKBIP expression was linked to TMB in 13 cancers and MSI in seven cancers. Additionally, IKBIP is associated with numerous immunological and cancer-promoting pathways. Simultaneously, various cancer types have unique tumor-infiltrating immune cell profiles. Conclusion: IKBIP has the potential to act as a pan-cancer oncogene and is crucial for both carcinogenesis and cancer immunity. Elevated IKBIP expression implies an immunosuppressive environment and may be used as a prognostic biomarker and therapeutic target.

Manufacturing and Characterization of Wide-Bundle Bamboo Scrimber: A Comparison with Other Engineered Bamboo Composites.

Controlling the variability in mat structure and properties in bamboo scrimber (BS) is key to producing the product for structural applications, and wide strip scrimber (WBS) is an effective approach. In this study, the effects of scrimmed bamboo bundle morphology and product density on the properties of WBS were investigated. WBS panels were manufactured and tested using wide (200 to 250 mm) bamboo strips with different fiberization intensity. Maximum strength properties (flexural, compressive, and shear strength), and lowest thickness swelling and water absorption were achieved with three or four passes due to the higher resin absorption by strips. For balanced product cost and performance, we recommend 1-2 fiberization passes and a panel density of 0.9-1.0 g/cm3. Panel mechanical properties were compared with other common bamboo composites. Bamboo scrimber products were highly variable in properties due to differing manufacturing processes, element treatments, and suboptimal mat structure. Products including laminated bamboo lumber and flattened bamboo made from nonfiberized elements show markedly different relationships between strength and elastic properties mostly due to inadequate bonding between the laminae, which causes premature bond-line failure. This study helped improve the understanding of the structure-property relationship of engineered bamboo products while providing insights into process optimization.

An in situ rewritable electrically-erasable photo-memory device for terahertz waves.

A terahertz read-only in situ electrically-erasable rewritable photo-memory device based on a perovskite:Ag (perovskite with Ag nanoparticles added)/SnO2/PEDOT:PSS hetero-junction structure is reported. Under low optical excitation, considerable terahertz amplitude modulation in a perovskite:Ag/PEDOT:PSS hybrid structure was achieved. When a SnO2 nanoparticle film was inserted between the perovskite and PEDOT:PSS layer, the attenuation of the terahertz signal was weaker than that of the perovskite:Ag/PEDOT:PSS hybrid structure; however, the SnO2 nanoparticle film considerably prolonged the recovery time of the modulated terahertz wave in air after photo-excitation was stopped. In addition, when bias voltages were applied to the perovskite:Ag/PEDOT:PSS and perovskite:Ag/SnO2/PEDOT:PSS hybrid structures, respectively, the terahertz signals recovered rapidly for both structures. Consequently, the photo-memory functionality was achieved based on a perovskite:Ag/SnO2/PEDOT:PSS hybrid structure with an in situ method for erasing stored information.

Active bidirectional electrically-controlled terahertz device based on dimethyl sulfoxide-doped PEDOT:PSS.

A high-efficiency active bidirectional electrically-controlled terahertz device based on DMSO-doped PEDOT:PSS with low-power photoexcitation is investigated. Under low-power optical excitation of 30 mW (0.5 W/cm2) and under bias voltages ranging from -0.6 V to 0.5 V, spectrally broadband modulation of THz transmission over a range from -54% to 60% is obtained over the frequency range from 0.2 to 2.6 THz in a MEH-PPV/PEDOT:PSS:DMSO/Si/PEDOT:PSS:DMSO hybrid structure. By considering the combined carrier density characteristics of the proposed device, it is found that the large-scale amplitude modulation can be ascribed to the electrically-controlled carrier density in the silicon layer with the assistance of the p-n junction that consists of the DMSO-doped PEDOT:PSS and silicon. Bidirectional modulation has a larger modulation range and is easier to use in communications applications when compared with unidirectional modulation. These results show great potential for application to the design of active broadband terahertz devices.