Enhanced growth resistance but no decline in growth resilience under long-term extreme droughts.

The frequency, intensity, and duration of extreme droughts, with devastating impacts on tree growth and survival, have increased with climate change over the past decades. Assessing growth resistance and resilience to drought is a crucial prerequisite for understanding the responses of forest functioning to drought events. However, the responses of growth resistance and resilience to extreme droughts with different durations across different climatic zones remain unclear. Here, we investigated the spatiotemporal patterns in growth resistance and resilience in response to extreme droughts with different durations during 1901-2015, relying on tree-ring chronologies from 2389 forest stands over the mid- and high-latitudinal Northern Hemisphere, species-specific plant functional traits, and diverse climatic factors. The findings revealed that growth resistance and resilience under 1-year droughts were higher in humid regions than in arid regions. Significant higher growth resistance was observed under 2-year droughts than under 1-year droughts in both arid and humid regions, while growth resilience did not show a significant difference. Temporally, tree growth became less resistant and resilient to 1-year droughts in 1980-2015 than in 1901-1979 in both arid and humid regions. As drought duration lengthened, the predominant impacts of climatic factors on growth resistance and resilience weakened and instead foliar economic traits, plant hydraulic traits, and soil properties became much more important in both climatic regions; in addition, such trends were also observed temporally. Finally, we found that most of the Earth system models (ESMs) used in this study overestimated growth resistance and underestimated growth resilience under both 1-year and 2-year droughts. A comprehensive ecophysiological understanding of tree growth responses to longer and intensified drought events is urgently needed, and a specific emphasis should be placed on improving the performance of ESMs.

Dielectric Walls/Layers Modulated 3D Periodically Structured SERS Chips: Design, Batch Fabrication, and Applications.

As an indispensable constituent of plasmonic materials/dielectrics for surface enhanced Raman scattering (SERS) effects, dielectrics play a key role in excitation and transmission of surface plasmons which however remain more elusive relative to plasmonic materials. Herein, different roles of vertical dielectric walls, and horizontal and vertical dielectric layers in SERS via 3D periodic plasmonic materials/dielectrics structures are studied. Surface plasmon polariton (SPP) interferences can be maximized within dielectric walls besieged by plasmonic layers at the wall thicknesses of integral multiple half-SPPplasmonic material-dielectric -wavelength which effectively excites localized surface plasmon resonance to improve SERS effects by one order of magnitude compared to roughness and/or nanogaps only. The introduction of extra Au nanoparticles on thin dielectric layers can further enhance SERS effects only slightly. Thus, the designed Au/SiO2 based SERS chips show an enhancement factor of 8.9 × 1010 , 265 times higher relative to the chips with far thinner SiO2 walls. As many as 1200 chips are batch fabricated for a 4 in wafer using cost-effective nanoimprint lithography which can detect trace Hg ions as low as 1 ppt. This study demonstrates a complete generalized platform from design to low-cost batch-fabrication to applications for novel high performance SERS chips of any plasmonic materials/dielectrics.