Enhancing the Carrier Mobility and Bias Stability in Metal-Oxide Thin Film Transistors with Bilayer InSnO/a-InGaZnO Heterojunction Structure.

In this study, the electrical performance and bias stability of InSnO/a-InGaZnO (ITO/a-IGZO) heterojunction thin-film transistors (TFTs) are investigated. Compared to a-IGZO TFTs, the mobility (µFE) and bias stability of ITO/a-IGZO heterojunction TFTs are enhanced. The band alignment of the ITO/a-IGZO heterojunction is analyzed by using X-ray photoelectron spectroscopy (XPS). A conduction band offset (∆EC) of 0.5 eV is observed in the ITO/a-IGZO heterojunction, resulting in electron accumulation in the formed potential well. Meanwhile, the ∆EC of the ITO/a-IGZO heterojunction can be modulated by nitrogen doping ITO (ITON), which can affect the carrier confinement and transport properties at the ITO/a-IGZO heterojunction interface. Moreover, the carrier concentration distribution at the ITO/a-IGZO heterointerface is extracted by means of TCAD silvaco 2018 simulation, which is beneficial for enhancing the electrical performance of ITO/a-IGZO heterojunction TFTs.

Investigation of highly reflective p-electrodes for AlGaN-based deep-ultraviolet light-emitting diodes.

We proposed a "Ni sacrifice" method to fabricate Al-based highly reflective p-electrode in the ultraviolet spectral region for AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs). The "Ni sacrifice" p-electrode could have a high optical reflectivity of around 90% at the DUV spectral region below 300 nm. Compared to Ni/Au, indium tin oxide (ITO), and Pd p-contacts, the "Ni sacrifice" led to a higher resistivity of p-contacts and a slightly higher operated voltage of the DUV-LEDs (within 0.6 V at 20 mA). Although the electrical performance was degraded slightly, the light output power and external quantum efficiency of the DUV-LEDs could be improved by utilizing the "Ni sacrifice" p-electrode. Besides, we introduced a grid of vias in the device mesa and reduced the diameter of the vias to achieve an enhanced peak external quantum efficiency (EQE) up to 1.73%. And the wall-plug efficiency (WPE) of DUV-LEDs with a "Ni sacrifice" p-electrode was higher than that of Ni/Au p-electrode DUV-LEDs at low currents. These results highlight the great potential of the proposed "Ni sacrifice" reflective p-electrode for use in DUV-LEDs.

Electrical Stability Modeling Based on Surface Potential for a-InGaZnO TFTs under Positive-Bias Stress and Light Illumination.

In this work, an electrical stability model based on surface potential is presented for amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) under positive-gate-bias stress (PBS) and light stress. In this model, the sub-gap density of states (DOSs) are depicted by exponential band tails and Gaussian deep states within the band gap of a-IGZO. Meanwhile, the surface potential solution is developed with the stretched exponential distribution relationship between the created defects and PBS time, and the Boltzmann distribution relationship between the generated traps and incident photon energy, respectively. The proposed model is verified using both the calculation results and experimental data of a-IGZO TFTs with various distribution of DOSs, and a consistent and accurate expression of the evolution of transfer curves is achieved under PBS and light illumination.

Enhanced light output from deep ultraviolet light-emitting diodes enabled by high-order modes on a photonic crystal surface.

The authors demonstrate the enhanced light output from 275-nm AlGaN-based deep ultraviolet (DUV) light-emitting diode (LED) structures via the in-plane modulation of shallow photonic crystal (PC) patterns that were fabricated on the p-AlGaN contact layer surface. The employed PC lattice constants are in the range of 270-780 nm, much larger than the fundamental Bragg order lattice constant (∼95 nm). As compared to the unpatterned sample, the intensity of the top (or bottom) emission can be enhanced by up to 331% (or 246%), attributed to the high-order coherent diffraction of the internal trapped light and also the Purcell enhancement of spontaneous emission. The findings in this Letter suggest an easier way for the realization of more energy-efficient DUV LEDs which offer the advantage of high emission for various applications in disinfection and sterilization.

Analysis of Nitrogen-Doping Effect on Sub-Gap Density of States in a-IGZO TFTs by TCAD Simulation.

In this work, the impact of nitrogen doping (N-doping) on the distribution of sub-gap states in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is qualitatively analyzed by technology computer-aided design (TCAD) simulation. According to the experimental characteristics, the numerical simulation results reveal that the interface trap states, bulk tail states, and deep-level sub-gap defect states originating from oxygen-vacancy- (Vo) related defects can be suppressed by an appropriate amount of N dopant. Correspondingly, the electrical properties and reliability of the a-IGZO TFTs are dramatically enhanced. In contrast, it is observed that the interfacial and deep-level sub-gap defects are increased when the a-IGZO TFT is doped with excess nitrogen, which results in the degeneration of the device's performance and reliability. Moreover, it is found that tail-distributed acceptor-like N-related defects have been induced by excess N-doping, which is supported by the additional subthreshold slope degradation in the a-IGZO TFT.

Hybrid Light Emitters and UV Solar-Blind Avalanche Photodiodes based on III-Nitride Semiconductors.

In the last two decades, remarkable progress has been achieved in the field of optoelectronic devices based on III-nitride semiconductors. In terms of photonics applications in the visible-UV spectral range, III-nitrides are one of the most promising materials. For instance, emerging gallium nitride (GaN)-based micro-light-emitting diode (LED) technology for high-resolution display, and UV photo-detection for environmental monitoring, health, and medical applications. In this work, hybrid micro/nano-LEDs with integration of II-VI quantum dots by means of lithography and nano-imprinting patterning techniques are demonstrated, and high-performance red/green/blue and white emissions are achieved. Consequently, plasmonic nanolasers are designed and fabricated using a metal-oxide-semiconductor structure, where strong surface plasmon polariton coupling leads to the efficient lasing with a low excitation threshold from the visible to UV tunable spectral range. Furthermore, performance-improved AlGaN UV solar-blind avalanche photodiodes (APDs) with a separate absorption and multiplication structure by polarization engineering are reported. These APDs deliver a record-high avalanche gain of up to 1.6 × 105 . These newest advances in nano/micro-LEDs, nanolasers, and APDs can shed light on the emerging capabilities of III-nitride in cutting-edge applications.

Realization of p-type gallium nitride by magnesium ion implantation for vertical power devices.

Implementing selective-area p-type doping through ion implantation is the most attractive choice for the fabrication of GaN-based bipolar power and related devices. However, the low activation efficiency of magnesium (Mg) ions and the inevitable surface decomposition during high-temperature activation annealing process still limit the use of this technology for GaN-based devices. In this work, we demonstrate successful p-type doping of GaN using protective coatings during a Mg ion implantation and thermal activation process. The p-type conduction of GaN is evidenced by the positive Seebeck coefficient obtained during thermopower characterization. On this basis, a GaN p-i-n diode is fabricated, exhibiting distinct rectifying characteristics with a turn-on voltage of 3 V with an acceptable reverse breakdown voltage of 300 V. Electron beam induced current (EBIC) and electroluminescent (EL) results further confirm the formation of p-type region due to Mg ion implantation and subsequent thermal activation. This repeatable and uniform manufacturing process can be implemented in mass production of GaN devices for versatile power and optoelectronic applications.

Vertically Emitting Indium Phosphide Nanowire Lasers.

Semiconductor nanowire (NW) lasers have attracted considerable research effort given their excellent promise for nanoscale photonic sources. However, NW lasers currently exhibit poor directionality and high threshold gain, issues critically limiting their prospects for on-chip light sources with extremely reduced footprint and efficient power consumption. Here, we propose a new design and experimentally demonstrate a vertically emitting indium phosphide (InP) NW laser structure showing high emission directionality and reduced energy requirements for operation. The structure of the laser combines an InP NW integrated in a cat's eye (CE) antenna. Thanks to the antenna guidance with broken asymmetry, strong focusing ability, and high Q-factor, the designed InP CE-NW lasers exhibit a higher degree of polarization, narrower emission angle, enhanced internal quantum efficiency, and reduced lasing threshold. Hence, this NW laser-antenna system provides a very promising approach toward the achievement of high-performance nanoscale lasers, with excellent prospects for use as highly localized light sources in present and future integrated nanophotonics systems for applications in advanced sensing, high-resolution imaging, and quantum communications.

Electrically tunable terahertz metamaterials with embedded large-area transparent thin-film transistor arrays.

Engineering metamaterials with tunable resonances are of great importance for improving the functionality and flexibility of terahertz (THz) systems. An ongoing challenge in THz science and technology is to create large-area active metamaterials as building blocks to enable efficient and precise control of THz signals. Here, an active metamaterial device based on enhancement-mode transparent amorphous oxide thin-film transistor arrays for THz modulation is demonstrated. Analytical modelling based on full-wave techniques and multipole theory exhibits excellent consistent with the experimental observations and reveals that the intrinsic resonance mode at 0.75 THz is dominated by an electric response. The resonant behavior can be effectively tuned by controlling the channel conductivity through an external bias. Such metal/oxide thin-film transistor based controllable metamaterials are energy saving, low cost, large area and ready for mass-production, which are expected to be widely used in future THz imaging, sensing, communications and other applications.

Strong and Conductive Dry Carbon Nanotube Films by Microcombing.

In order to maximize the carbon nanotube (CNT) buckypaper properties, it is critical to improve their alignment and reduce their waviness. In this paper, a novel approach, microcombing, is reported to fabricate aligned CNT films with a uniform structure. High level of nanotube alignment and straightness was achieved using sharp surgical blades with microsized features at the blade edges to comb single layer of CNT sheet. These microcombs also reduced structural defects within the film and enhanced the nanotube packing density. Following the microcombing approach, the as-produced CNT films demonstrated a tensile strength of up to 3.2 GPa, Young's modulus of up to 172 GPa, and electrical conductivity of up to 1.8 × 10(5) S m(-1) , which are much superior to previously reported CNT films or buckypapers. More importantly, this novel technique requires less rigorous process control and can construct CNT films with reproducible properties.

Second-order surface-plasmon assisted responsivity enhancement in germanium nano-photodetectors with bull's eye antennas.

The enhancement of photo-response in nanometer-scale germanium photodetectors through bull's eye antennas capable of supporting 2nd-order Bloch surface plasmon modes is demonstrated in theory and experiment. A detailed numerical investigation reveals that the presence of surface wave and its constructive interference with the directly incident light are incorporated into the main mechanisms for enhancing transmission through the central nanoaperture. With a grating period of 1500 nm, the area-normalized responsivity can be enhanced up to 3.8 times at 2 V bias for a 780 nm laser. It provides an easier fabrication path for ultra-short wavelength operations especially in devices using optically denser materials.

In-situ atomic-scale observation of irradiation-induced void formation.

The formation of voids in an irradiated material significantly degrades its physical and mechanical properties. Void nucleation and growth involve discrete atomic-scale processes that, unfortunately, are not yet well understood due to the lack of direct experimental examination. Here we report an in-situ atomic-scale observation of the nucleation and growth of voids in hexagonal close-packed magnesium under electron irradiation. The voids are found to first grow into a plate-like shape, followed by a gradual transition to a nearly equiaxial geometry. Using atomistic simulations, we show that the initial growth in length is controlled by slow nucleation kinetics of vacancy layers on basal facets and anisotropic vacancy diffusivity. The subsequent thickness growth is driven by thermodynamics to reduce surface energy. These experiments represent unprecedented resolution and characterization of void nucleation and growth under irradiation, and might help with understanding the irradiation damage of other hexagonal close-packed materials.

Continuous measurement of peak hydrogen fluoride exposures in aluminum smelter potrooms: instrument development and in-plant evaluation.

The aluminum smelting process continuously evolves both sulfur dioxide (SO2) and hydrogen fluoride (HF) gases. The vast majority of these evolved gases are captured by local exhaust ventilation systems and transported to fume treatment centers. Any gas escaping the ventilation systems could create the potential for workplace exposures. Currently, there are no commercially available sensors that are capable of selectively measuring peak concentrations (< 10 sec) of HF in the presence of SO2. This measurement capability is critical for facilitating a better understanding of the etiology of respiratory health effects. This article presents the development and in-plant testing of a portable, tunable diode-based HF sensor that shows equivalent or improved performance relative to NIOSH Method 7902 and is capable of measuring short-term personal peak HF exposure potentials in operating aluminum smelters.

Analysis of conformational polymorphism in pharmaceutical solids using solid-state NMR and electronic structure calculations.

A detailed analysis of molecular structure in three polymorphic forms of 5-methyl-2-[(2-nitrophenyl)amino]-3-thiophenecarbonitrile is made using a combination of multidimensional solid-state NMR (SSNMR) experiments and molecular modeling via electronic structure calculations. These compounds, collectively referred to as ROY because of their red, orange, and yellow colors, share a similar molecular structure with the exception of the dihedral angle between the phenyl and thiophene rings. The ROY materials make it possible to study the influence of nearly a single degree of freedom on the associated NMR spectra. Using the 2D PASS (Antzutkin et al. J. Magn. Reson. A 1995, 115, 7) experiment, spectral editing techniques, and DFT-based calculations of the local fields, an analysis is made of the sensitivity of all carbon and nitrogen sites to changing molecular conformation. Chemical shift and dipolar coupling information obtained from these experiments vary noticeably between forms and are subsequently used to quantitatively determine aspects of molecular structure in these materials, including the coplanar angle between the phenyl and thiophene rings. The influence of motion on the methyl and nitro chemical shifts is also investigated. The accuracy of the information obtained from local field analysis and the model structure calculation demonstrates the capabilities of SSNMR as a quantitative structural method.