Evolution of the Valley Position in Bulk Transition-Metal Chalcogenides and Their Monolayer Limit.

Layered transition metal chalcogenides with large spin orbit coupling have recently sparked much interest due to their potential applications for electronic, optoelectronic, spintronics, and valleytronics. However, most current understanding of the electronic structure near band valleys in momentum space is based on either theoretical investigations or optical measurements, leaving the detailed band structure elusive. For example, the exact position of the conduction band valley of bulk MoS2 remains controversial. Here, using angle-resolved photoemission spectroscopy with submicron spatial resolution (micro-ARPES), we systematically imaged the conduction/valence band structure evolution across representative chalcogenides MoS2, WS2, and WSe2, as well as the thickness dependent electronic structure from bulk to the monolayer limit. These results establish a solid basis to understand the underlying valley physics of these materials, and also provide a link between chalcogenide electronic band structure and their physical properties for potential valleytronics applications.

Spectroscopic characterization of charge carrier anisotropic motion in twisted few-layer graphene.

Graphene, a layer of carbon atoms in a honeycomb lattice, captures enormous interest as probably the most promising component of future electronics thanks to its mechanical robustness, flexibility, and unique charge carrier quasiparticles propagating like massless high energy Dirac fermions. If several graphene layers form a stack, the interaction between them is, on the one hand, weak, allowing realization of various registries between the layers and, on the other hand, strong enough for a wide range tuning of the electronic properties. Here we grow few layer graphene with various number of layers and twist configurations and address the electronic properties of individual atomic layers in single microscopic domains using angle-resolved photoelectron spectromicroscopy. The dependence of the interlayer coupling on the twist angle is analyzed and, in the domains with tri-layers and more, if different rotations are present, the electrons in weaker coupled adjacent layers are shown to have different properties manifested by coexisting van Hove singularities, moiré superlattices with corresponding superlattice Dirac points, and charge carrier group velocity renormalizations. Moreover, pronounced anisotropy in the charge carrier motion, opening a possibility to transform strongly coupled graphene bilayers into quasi one-dimensional conductors, is observed.

On the Origin of the Improvement of Electrodeposited MnOx Films in Water Oxidation Catalysis Induced by Heat Treatment.

Manganese oxides (MnOx ) are considered to be promising catalysts for water oxidation. Building on our previous studies showing that the catalytic activity of MnOx films electrodeposited from aqueous electrolytes is improved by a simple heat treatment, we have explored the origin of the catalytic enhancement at an electronic level by X-ray absorption spectroscopy (XAS). The Mn L-edge XA spectra measured at various heating stages were fitted by linear combinations of the spectra of the well-defined manganese oxides-MnO, Mn3 O4 , Mn2 O3 , MnO2 and birnessite. This analysis identified two major manganese oxides, Mn3 O4 and birnessite, that constitute 97 % of the MnOx films. Moreover, the catalytic improvement on heat treatment at 90 °C is related to the conversion of a small amount of birnessite to the Mn3 O4 phase, accompanied by an irreversible dehydration process. Further dehydration at higher temperature (120 °C), however, leads to a poorer catalytic performance.

Comparing graphene growth on Cu(111) versus oxidized Cu(111).

The epitaxial growth of graphene on catalytically active metallic surfaces via chemical vapor deposition (CVD) is known to be one of the most reliable routes toward high-quality large-area graphene. This CVD-grown graphene is generally coupled to its metallic support resulting in a modification of its intrinsic properties. Growth on oxides is a promising alternative that might lead to a decoupled graphene layer. Here, we compare graphene on a pure metallic to graphene on an oxidized copper surface in both cases grown by a single step CVD process under similar conditions. Remarkably, the growth on copper oxide, a high-k dielectric material, preserves the intrinsic properties of graphene; it is not doped and a linear dispersion is observed close to the Fermi energy. Density functional theory calculations give additional insight into the reaction processes and help explaining the catalytic activity of the copper oxide surface.