Nature of magnetization and lateral spin-orbit interaction in gated semiconductor nanowires.

Semiconductor nanowires are interesting candidates for realization of spintronics devices. In this paper we study electronic states and effects of lateral spin-orbit coupling (LSOC) in a one-dimensional asymmetrically biased nanowire using the Hartree-Fock method with Dirac interaction. We have shown that spin polarization can be triggered by LSOC at finite source-drain bias,as a result of numerical noise representing a random magnetic field due to wiring or a random background magnetic field by Earth magnetic field, for instance. The electrons spontaneously arrange into spin rows in the wire due to electron interactions leading to a finite spin polarization. The direction of polarization is, however, random at zero source-drain bias. We have found that LSOC has an effect on orientation of spin rows only in the case when source-drain bias is applied.

Probing dopants in wide semiconductor quantum point contacts.

Effects of randomly distributed impurities on conductance, spin polarization and electron localization in realistic gated semiconductor quantum point contacts (QPCs) have been simulated numerically. To this end density functional theory in the local spin-density approximation has been used. In the case when the donor layer is embedded far from the two-dimensional electron gas (2DEG) the electrostatic confinement potential exhibits the conventional parabolic form, and thus the usual ballistic transport phenomena take place both in the devices with split gates alone and with an additional metallic gate on the top. In the opposite case, i.e. when the randomly distributed donors are placed not far away from the 2DEG layer, there are drastic changes like the localization of electrons in the vicinity of confinement potential minima which give rise to fluctuations in conductance and resonances. The conductance as a function of the voltage applied to the top gate for asymmetrically charged split gates has been calculated. In this case resonances in conductance caused by randomly distributed donors are shifted and decrease in amplitude while the anomalies caused by interaction effects remain unmodified. It has been also shown that for a wide QPC the polarization can appear in the form of stripes. The importance of partial ionization of the random donors and the possibility of short range order among the ionized donors are emphasized. The motivation for this work is to critically evaluate the nature of impurities and how to guide the design of high-mobility devices.

Wave transport and statistical properties of an open non-Hermitian quantum dot with parity-time symmetry.

A basic quantum-mechanical model for wave functions and current flow in open quantum dots or billiards is investigated. The model involves non-Hertmitian quantum mechanics, parity-time (PT) symmetry, and PT-symmetry breaking. Attached leads are represented by positive and negative imaginary potentials. Thus probability densities, currents flows, etc., for open quantum dots or billiards may be simulated in this way by solving the Schrödinger equation with a complex potential. Here we consider a nominally open ballistic quantum dot emulated by a planar microwave billiard. Results for probability distributions for densities, currents (Poynting vector), and stress tensor components are presented and compared with predictions based on Gaussian random wave theory. The results are also discussed in view of the corresponding measurements for the analogous microwave cavity. The model is of conceptual as well as of practical and educational interest.

Bound states, electron localization and spin correlations in low-dimensional GaAs/AlGaAs quantum constrictions.

We analyze the occurrence of local magnetization and the effects of electron localization in different models of quantum point contacts (QPCs) using spin-relaxed density functional theory (DFT/LSDA) by means of numerical simulations. In the case of soft confinement potentials the degree of localization is weak and we therefore observe only traces of partial electron localization in the middle of the QPC. In the pinch-off regime there is, however, distinct accumulation at the QPC edges. At the other end, strong confinement potential, low-electron density in the leads and top or implant gates favor electron localization. In such cases one may create a variety of electron configurations from a single localized electron to more complex structures with multiple rows and Wigner lattices.