Luobuma Leaf Spot Disease Caused by Alternaria tenuissima in China.

Luobuma (Apocynum venetum and Poacynum hendersonni) is widely cultivated for environmental conservation, medicinal purposes and the textile industry. In 2018, a severe leaf spot disease that attacked the leaves of Luobuma was observed in plants cultivated in Yuzhong County, Gansu Province, China. Symptoms of the disease appeared as white or off-white spots surrounded by brown margins on the leaves of A. venetum. The spots expanded and covered a large area of the leaf, presenting as "cankers" with progression of the disease, leading to leaf death. The initial symptoms of the disease on P. hendersonni were similar to the symptoms of A. venetum, with a larger disease spot than A. venetum, and the spot was black and thicker. The aim of this study was to identify the fungal species and evaluate the effectiveness of fungicides (hymexazol and zhongshengmycin) against the pathogen in vitro. The fungi species that caused the new disease was identified as Alternaria tenuissima based on the morphological characteristics, pathogenicity tests, and phylogenetic analysis of the internal transcribed spacer (ITS) region, glyceraldehyde 3-phosphate dehydrogenase (gpd), translation elongation factor 1-alpha (TEF) and the histone 3 (H3) gene sequences. The findings showed that hymexazol fungicide can be used to control leaf spot disease. This is the first report on Luobuma leaf spot disease caused by A. tenuissima in China.

Seeded Growth of Ultrathin Carbon Films Directly onto Silicon Substrates.

The production of graphene films is of importance for the large-scale application of graphene-based materials; however, there is still a lack of an efficient and effective approach to synthesize graphene films directly on dielectric substrates. Here, we report the controlled growth of ultrathin carbon films, which have a similar structure to graphene, directly on silicon substrates in a process of seeded chemical vapor deposition (CVD). Crystalline silicon with a thermally grown 300 nm oxide layer was first treated with 3-trimethoxysilyl-1-propanamine (APS), which was used as an anchor point for the covalent deposition of small graphene flakes, obtained from graphite using the Hummers' method. Surface coverage of these flakes on the silicon substrate was estimated by scanning electron microscopy (SEM) to be around only 0.01% of the total area. By treating the covalently deposited graphene as seeds for CVD growth, the coverage was increased to >40% when using ethanol as the carbon source. Examination of the carbon thin films with SEM, X-ray photoelectron spectroscopy, and Raman spectroscopy indicated that they consist of domains of coherent, single-layer graphene produced by the coalescence of the expanding graphene islands. This approach potentially lends itself to the production of high-quality graphene films that may be suitable for device fabrication.