PpAmy1 Plays a Role in Fruit-Cracking by Regulating Mesocarp Starch Hydrolysis of Nectarines.

Nectarine [Prunus persica (L.) Batsch var.] fruits are highly susceptible to cracking during the ripening process, which significantly decreases their commercial value. In this study, we investigated the underlying mechanism of nectarine fruit-cracking using two nectarine varieties, namely, "Qiannianhong" (cracking-susceptible) and "CR1012" (cracking-resistant). Our findings indicate that nectarine fruit-cracking occurs during the second stage of fruit expansion. Despite no differences in epicarp cell size between "Qiannianhong" and "CR1012", the mesocarp cells of "Qiannianhong" were larger than those of "CR1012". Moreover, a comparison of starch hydrolysis between the two varieties revealed that "CR1012" had higher starch content in the mesocarp but lower soluble sugar content compared to "Qiannianhong". Additionally, by testing the α-amylase and ß-amylase activity of the mesocarp, our results showed a difference only in α-amylase activity between the two varieties. Furthermore, qRT-PCR detection indicated a higher expression level of the PpAmy1 (α-amylase synthesis gene) in "Qiannianhong" compared to "CR1012". To further investigate the role of PpAmy1, we employed RNAi technology to suppress its expression in "Qiannianhong" fruits. The results showed a significant reduction in α-amylase activity, starch hydrolysis, soluble sugar content, cell size of the mesocarp, and fruit-cracking. These findings underscore the pivotal role of PpAmy1 in the occurrence of nectarine fruit cracking.

HfO2-based ferroelectric thin film and memory device applications in the post-Moore era: A review.

The rapid development of 5G, big data, and Internet of Things (IoT) technologies is urgently required for novel non-volatile memory devices with low power consumption, fast read/write speed, and high reliability, which are crucial for high-performance computing. Ferroelectric memory has undergone extensive investigation as a viable alternative for commercial applications since the post-Moore era. However, conventional perovskite-structure ferroelectrics (e.g., PbZr x Ti1- x O3) encounter severe limitations for high-density integration owing to the size effect of ferroelectricity and incompatibility with complementary metal-oxide-semiconductor technology. Since 2011, the ferroelectric field has been primarily focused on HfO2-based ferroelectric thin films owing to their exceptional scalability. Several reviews discussing the control of ferroelectricity and device applications exist. It is believed that a comprehensive understanding of mechanisms based on industrial requirements and concerns is necessary, such as the wake-up effect and fatigue mechanism. These mechanisms reflect the atomic structures of the materials as well as the device physics. Herein, a review focusing on phase stability and domain structure is presented. In addition, the recent progress in related ferroelectric memory devices and their challenges is briefly discussed.