Fabrication of red-emitting perovskite LEDs by stabilizing their octahedral structure.

Light-emitting diodes (LEDs) based on metal halide perovskites (PeLEDs) with high colour quality and facile solution processing are promising candidates for full-colour and high-definition displays1-4. Despite the great success achieved in green PeLEDs with lead bromide perovskites5, it is still challenging to realize pure-red (620-650 nm) LEDs using iodine-based counterparts, as they are constrained by the low intrinsic bandgap6. Here we report efficient and colour-stable PeLEDs across the entire pure-red region, with a peak external quantum efficiency reaching 28.7% at 638 nm, enabled by incorporating a double-end anchored ligand molecule into pure-iodine perovskites. We demonstrate that a key function of the organic intercalating cation is to stabilize the lead iodine octahedron through coordination with exposed lead ions and enhanced hydrogen bonding with iodine. The molecule synergistically facilitates spectral modulation, promotes charge transfer between perovskite quantum wells and reduces iodine migration under electrical bias. We realize continuously tunable emission wavelengths for iodine-based perovskite films with suppressed energy loss due to the decrease in bond energy of lead iodine in ionic perovskites as the bandgap increases. Importantly, the resultant devices show outstanding spectral stability and a half-lifetime of more than 7,600 min at an initial luminance of 100 cd m-2.

Efficient and stable hybrid perovskite-organic light-emitting diodes with external quantum efficiency exceeding 40 per cent.

Light-emitting diodes (LEDs) based on perovskite semiconductor materials with tunable emission wavelength in visible light range as well as narrow linewidth are potential competitors among current light-emitting display technologies, but still suffer from severe instability driven by electric field. Here, we develop a stable, efficient and high-color purity hybrid LED with a tandem structure by combining the perovskite LED and the commercial organic LED technologies to accelerate the practical application of perovskites. Perovskite LED and organic LED with close photoluminescence peak are selected to maximize photon emission without photon reabsorption and to achieve the narrowed emission spectra. By designing an efficient interconnecting layer with p-type interface doping that provides good opto-electric coupling and reduces Joule heating, the resulting green emitting hybrid LED shows a narrow linewidth of around 30 nm, a peak luminance of over 176,000 cd m-2, a maximum external quantum efficiency of over 40%, and an operational half-lifetime of over 42,000 h.

Blue ZnSeTe quantum dot light-emitting diodes with low efficiency roll-off enabled by an in situ hybridization of ZnMgO nanoparticles and amino alcohol molecules.

ZnSeTe quantum dots (QDs) have been employed as promising emitters for blue QD-based light-emitting diodes (QLEDs) due to their unique optoelectronic properties and environmental friendliness. However, such QLEDs usually suffer from serious efficiency roll-off primarily stemming from exciton loss at the interface of the QD layer and the ZnMgO (ZMO) electron transport layer (ETL), which remarkably hinders their application in flat-panel displays. Herein, we propose an in situ hybridization strategy that involves the pre-introduction of amino alcohols into the reaction solution. This strategy effectively suppresses the nucleophilic condensation process by facilitating the coordination of ammonium and hydroxyl groups with metal cations (M2+, i.e. Zn2+ and Mg2+). It slows down the growth rate of ZMO nanoparticles (NPs) while simultaneously facilitating M-O coordination, resulting in the synthesis of small-sized and low-defect ZMO NPs. Notably, this in situ hybridization approach not only alleviates emission quenching at the QDs/ETL interface but also elevates the energy level of the ETL for enhancing carrier injection. We further investigated the impact of amino alcohols with varying carbon-chain lengths on the performance of ZMO NPs and the corresponding LED devices. The optimal blue ZnSeTe QLED demonstrates an impressive EQE of 8.6% with only an ∼11% drop when the current density is increased to 200 mA cm-2, and the device operating lifetime extends to over 1300 h. Conversely, the device utilizing traditionally post-treated ZMO NPs as the ETL exhibits 45% efficiency roll-off and device lifetime of merely 190 h.

Using Targeted Next-Generation Sequencing to Diagnose Severe Pneumonia Due to Tropheryma Whipplei and Human Metapneumovirus: A Case Report and Literature Review.

Background: In addition to the well-known Whipple's disease (WD), Tropheryma Whipplei (TW) can also lead to acute pneumonia. There is no unified consensus on the susceptible population, pathogenesis, clinical manifestations, diagnostic criteria, and treatment options for TW pneumonia. Clinical Presentation and Intervention: This is an elderly patient with multiple injuries caused by falling from a building, and was transferred to intensive care unit (ICU) for mechanical ventilation and empirical anti-infection treatment due to severe pneumonia, and then the results of targeted next-generation sequencing (tNGS) in patient's bronchoalveolar lavage fluid (BALF) suggested TW and human metapneumovirus (HMPV) infection, and after switching to anti-infective therapy for TW, the patient was successfully extubated and transferred out of the ICU. Conclusion: This is the first case of using tNGS to diagnose severe pneumonia caused by TW and HMPV. We hope that our study can serve as a reference for the diagnosis and treatment of related cases in the future.

Efficient, Color-Stable, Pure-Blue Light-Emitting Diodes Based on Aromatic Ligand-Engineered Perovskite Nanoplatelets.

Perovskite nanoplatelets (NPLs) show great potential for high-color-purity light-emitting diodes (LEDs) due to their narrow line width and high exciton binding energy. However, the performance of perovskite NPL LEDs lags far behind perovskite quantum dot-/film-based LEDs, owing to their material instability and poor carrier transport. Here, we achieved efficient and stable pure blue-emitting CsPbBr3 NPLs with outstanding optical and electrical properties by using an aromatic ligand, 4-bromothiophene-2-carboxaldehyde (BTC). The BTC ligands with thiophene groups can guide two-dimensional growth and inhibit out-of-plane ripening of CsPbBr3 NPLs, which, meanwhile, increases their structural stability via strongly interacting with PbBr64- octahedra. Moreover, aromatic structures with delocalized π-bonds facilitate charge transport, diminish band tail states, and suppress Auger processes in CsPbBr3 NPLs. Consequently, the LEDs demonstrate efficient and color-stable blue emissions at 465 nm with a narrow emission line width of 17 nm and a maximum external quantum efficiency (EQE) of 5.4%, representing the state-of-the-art CsPbBr3 NPL LEDs.

CsZnPbBr3/ZnS core/shell perovskite nanocrystals for stable and efficient white light-emitting diodes.

The widespread applicability of perovskite nanocrystals (PeNCs) is impeded by their intrinsic instability. A promising solution is utilizing robust chalcogenides as a protective shell to shield the sensitive luminescent cores from the external environment. However, the inferior structural stability and surface lability of PeNCs usually lead to perovskite phase transition during shell growth. Herein, we introduced smaller Zn ions to partially replace Pb ions in perovskites, which reduces the Pb-X bond length and enhances the Pb-X bond energy for inner lattice stabilization. Simultaneously, extra oleylammonium bromide (OAmBr) was added to protect the labile surface of PeNCs by compensating for the detachment of ligands and the loss of surface Br ions. As a result, the dual strategies enable the epitaxial growth of a ZnS shell and significantly enhance the chemical stability of CsZnPbBr3/ZnS core/shell PeNCs. After three thermal cycles ranging from 300 to 450 K, the core/shell PeNCs retained 70% of their initial photoluminescence (PL) intensity. In stark contrast, the pristine CsPbBr3 PeNCs exhibit complete PL quenching after just the first temperature cycle. For practical applications, the green core/shell PeNCs were integrated with commercially available red-emitting phosphors on a blue-emitting InGaN chip to fabricate a white light-emitting diode (WLED), which demonstrates a high luminous efficacy (LE) of 61.3 lm W-1 and nearly constant Commission Internationale de l'Eclairage (CIE) coordinates under varying operating currents.

Enhancing crystal integrity and structural rigidity of CsPbBr3 nanoplatelets to achieve a narrow color-saturated blue emission.

Quantum-confined CsPbBr3 perovskites are promising blue emitters for ultra-high-definition displays, but their soft lattice caused by highly ionic nature has a limited stability. Here, we endow CsPbBr3 nanoplatelets (NPLs) with atomic crystal-like structural rigidity through proper surface engineering, by using strongly bound N-dodecylbenzene sulfonic acid (DBSA). A stable, rigid crystal structure, as well as uniform, orderly-arranged surface of these NPLs is achieved by optimizing intermediate reaction stage, by switching from molecular clusters to mono-octahedra, while interaction with DBSA resulted in formation of a CsxO monolayer shell capping the NPL surface. As a result, both structural and optical stability of the CsPbBr3 NPLs is enhanced by strong covalent bonding of DBSA, which inhibits undesired phase transitions and decomposition of the perovskite phase potentially caused by ligand desorption. Moreover, rather small amount of DBSA ligands at the NPL surface results in a short inter-NPL spacing in their closely-packed films, which facilitates efficient charge injection and transport. Blue photoluminescence of the produced CsPbBr3 NPLs is bright (nearly unity emission quantum yield) and peaks at 457 nm with an extremely narrow bandwidth of 3.7 nm at 80 K, while the bandwidth of the electroluminescence (peaked at 460 nm) also reaches a record-narrow value of 15 nm at room temperature. This value corresponds to the CIE coordinates of (0.141, 0.062), which meets Rec. 2020 standards for ultra-high-definition displays.

High-Efficiency and Stable Colloidal One-Dimensional Core/Shell Nanorod Light-Emitting Diodes.

Anisotropic nanocrystals such as nanorods (NRs) display unique linearly polarized emission, which is expected to break the external quantum efficiency (EQE) limit of quantum dot-based light-emitting diodes (LEDs). However, the progress in achieving a higher EQE using NRs encounters several challenges, primarily involving a low photoluminescence quantum yield (PLQY) of NRs and imbalanced charge injection in NR-LEDs. In this work, we investigated NR-LEDs based on CdSe/CdZnS/ZnS rod-in-rod NRs with a high PLQY and higher linear polarization compared to those of dot-in-rod NRs. The balanced charge injection is achieved using ZnMgO nanoparticles as the electron transport layer and poly-TPD {poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine]} as the hole transport layer. Therefore, the NR-LEDs exhibit a maximum EQE of 21.5% and a maximum luminance of >120 000 cd/m2 owing to the high level of in-plane transitions with a dipole moment of 90%. The NR-LEDs also have greatly inhibited droop in EQE under a high current density as well as outstanding operation lifetime and cycle stability.

Fine-Tuning Crystal Structures of Lead Bromide Perovskite Nanocrystals through Trace Cadmium(II) Doping for Efficient Color-Saturated Green LEDs.

Decreasing perovskite nanocrystal size increases radiative recombination due to the quantum confinement effect, but also increases the Auger recombination rate which leads to carrier imbalance in the emitting layers of electroluminescent devices. Here, we overcome this trade-off by increasing the exciton effective mass without affecting the size, which is realized through the trace Cd2+ doping of formamidinium lead bromide perovskite nanocrystals. We observe an ~2.7 times increase in the exciton binding energy benefiting from a slight distortion of the [BX6]4- octahedra caused by doping in the case of that the Auger recombination rate is almost unchanged. As a result, bright color-saturated green emitting perovskite nanocrystals with a photoluminescence quantum yield of 96 % are obtained. Cd2+ doping also shifts up the energy levels of the nanocrystals, relative to the Fermi level so that heavily n-doped emitters convert into only slightly n-doped ones; this boosts the charge injection efficiency of the corresponding light-emitting diodes. The light-emitting devices based on those nanocrystals reached a high external quantum efficiency of 29.4 % corresponding to a current efficiency of 123 cd A-1, and showed dramatically improved device lifetime, with a narrow bandwidth of 22 nm and Commission Internationale de I'Eclairage coordinates of (0.20, 0.76) for color-saturated green emission for the electroluminescence peak centered at 534 nm, thus being fully compliant with the latest standard for wide color gamut displays.

High-Performance Blue Perovskite Light-Emitting Diodes Enabled by Synergistic Effect of Additives.

While quasi-two-dimensional (quasi-2D) perovskites have good properties of cascade energy transfer, high exciton binding energy, and high quantum efficiency, which will benefit high-efficiency blue PeLEDs, inefficient domain distribution management and unbalanced carrier transport impede device performance improvement. Herein, (2-(9H-carbazol-9-yl)ethyl)phosphonic acid (2PACz) and methyl 2-aminopyridine-4-carboxylate (MAC) were simultaneously introduced to a blue quasi-2D perovskite film. Relying on the synergistic effect of 2PACz and MAC, it not only modulates the phase distribution inhibiting the n = 2 phase but also greatly improves the electrical property of the quasi-2D perovskite film. As a result, the as-modified blue quasi-2D PeLED demonstrated an external quantum efficiency (EQE) of 17.08% and a luminance of 10142 cd m-2. This study exemplifies the synergistic effect among dual additives and offers a new effective additive strategy modulating phase distribution and building balanced carrier transport, which paves the way for the fabrication of highly efficient blue PeLEDs.

Entropy-Driven Strongly Confined Low-Toxicity Pure-Red Perovskite Quantum Dots for Spectrally Stable Light-Emitting Diodes.

Spectrally stable pure-red perovskite quantum dots (QDs) with low lead content are essential for high-definition displays but are difficult to synthesize due to QD self-purification. Here, we make use of entropy-driven quantum-confined pure-red perovskite QDs to fabricate light-emitting diodes (LEDs) that have low toxicity and are efficient and spectrum-stable. Based on experimental data and first-principles calculations, multiple element alloying results in a 60% reduction in lead content while improving QD entropy to promote crystal stability. Entropy-driven QDs exhibit photoluminescence with 100% quantum yields and single-exponential decay lifetimes without alteration of their morphology or crystal structure. The pure-red LEDs utilizing entropy-driven QDs have spectrally stable electroluminescence, achieving a brightness of 4932 cd/m2, a maximum external quantum efficiency of over 20%, and a 15-fold longer operational lifetime than the CsPbI3 QD-based LEDs. These achievements demonstrate that entropy-driven QDs can mitigate local compositional heterogeneity and ion migration.

Tautomeric mixture coordination enables efficient lead-free perovskite LEDs.

Lead halide perovskite light-emitting diodes (PeLEDs) have demonstrated remarkable optoelectronic performance1-3. However, there are potential toxicity issues with lead4,5 and removing lead from the best-performing PeLEDs-without compromising their high external quantum efficiencies-remains a challenge. Here we report a tautomeric-mixture-coordination-induced electron localization strategy to stabilize the lead-free tin perovskite TEA2SnI4 (TEAI is 2-thiopheneethylammonium iodide) by incorporating cyanuric acid. We demonstrate that a crucial function of the coordination is to amplify the electronic effects, even for those Sn atoms that aren't strongly bonded with cyanuric acid owing to the formation of hydrogen-bonded tautomeric dimer and trimer superstructures on the perovskite surface. This electron localization weakens adverse effects from Anderson localization and improves ordering in the crystal structure of TEA2SnI4. These factors result in a two-orders-of-magnitude reduction in the non-radiative recombination capture coefficient and an approximately twofold enhancement in the exciton binding energy. Our lead-free PeLED has an external quantum efficiency of up to 20.29%, representing a performance comparable to that of state-of-the-art lead-containing PeLEDs6-12. We anticipate that these findings will provide insights into the stabilization of Sn(II) perovskites and further the development of lead-free perovskite applications.

Uniform nucleation and growth of Cs3Cu2I5 nanocrystals with high luminous efficiency and structural stability and their application in white light-emitting diodes.

Copper-based ternary halide composites have attracted great attention due to their superior chemical stability and optical properties. Herein, we developed an ultrafast high-power ultrasonic synthesis strategy to realize the uniform nucleation and growth of highly luminescent and stable Cs3Cu2I5 nanocrystals (NCs). The as-synthesized Cs3Cu2I5 NCs show uniform hexagonal morphology with an average mean size of 24.4 nm and emit blue light with a high photoluminescence quantum yield (PLQY) of ∼85%. Moreover, the Cs3Cu2I5 NCs exhibit a remarkable stability during continuous eight times heating/cooling cycling tests (303-423 K). We also demonstrated an efficient and stable white light-emitting diode (WLED) with a high luminous efficiency (LE) of 41.5 lm W-1 and a Commission Internationale de l'Eclairage (CIE) color coordinate of (0.33,0.33).

Vertical tubular zinc oxide microcavity enables efficient colloidal quantum dot lasing.

Colloidal quantum dots (CQDs) can potentially enable new classes of highly flexible, spectrally tunable lasers processible from solutions. Despite a considerable progress over the past years, colloidal-QD lasing is still an important challenge. We report vertical tubular zinc oxide (VT-ZnO) and lasing based on VT-ZnO/CsPb(Br0.5Cl0.5)3 CQDs composite. Due to regular hexagonal structure and smooth surface of VT-ZnO, the light emitted at around 525 nm is effectively modulated under 325 nm continuous excitation. The VT-ZnO/ CQDs composite finally shows lasing with a threshold of ∼ 46.9 µJ.cm-2 and a Q factor of ∼ 2978 under 400 nm femtosecond (fs) excitation. This ZnO based cavity can be complexed with CQDs easily, which may pave a new way of colloidal-QD lasing.

Highly Stable and Efficient Light-Emitting Diodes Based on Orthorhombic γ-CsPbI3 Nanocrystals.

Orthorhombic γ-CsPbI3 possesses the highest structural stability among the optically active (light-emissive) CsPbI3 perovskites. Here, we make use of a seed-assisted heteroepitaxial growth to fabricate seed/core/shell CaIx/γ-CsPbI3/CaI2 nanocrystals. Ultrasmall CaIx nanoparticles serve as seeds to template the Pb-centered octahedral arrangement which enables the formation of the γ-CsPbI3 phase and at the same time inhibit lattice strain by blocking the force transfer that otherwise leads to an octahedral twist and so improve the structural stability of the resulting nanocrystals. An outer shell composed from the same material, CaI2, isolates the formed γ-CsPbI3 nanocrystals from the environment, which also significantly improves their stability under ambient conditions. Optical and electrical studies indicate that the seed/core/shell CaIx/γ-CsPbI3/CaI2 structure possesses a shallower set of trap states as compared to cubic α-CsPbI3 nanocrystals. Light-emitting diodes utilizing these γ-CsPbI3 nanocrystals show a record high external quantum efficiency of 25.3%, high brightness of over 13600 cd/m2, and an operational lifetime of ∼14 h before reaching 50% of their initial luminance. These devices can repeatedly be illuminated over 650 times at ∼500 cd/m2 with no decline of brightness, which indicates their great commercial potential.

Physical Properties of an Ultrathin Al2O3/HfO2 Composite Film by Atomic Layer Deposition and the Application in Thin-Film Transistors.

A high-quality ultrathin dielectric film is important in the field of microelectronics. We designed a composite structure composed of Al2O3/HfO2 with different Al2O3/HfO2 cycles prepared by atomic layer deposition (ALD) to obtain high-quality ultrathin (1-12 nm) dielectric films. Al2O3 protected HfO2 from interacting with the Si substrate and inhibited the crystallization of the HfO2 film. High permittivity material of HfO2 was adopted to guarantee the good insulating property of the composite film. We investigated the physical properties as well as the growth mode of the composite film and found that the film exhibited a layer growth mode. The water contact angle and grazing-incidence small-angle X-ray scattering analyses revealed that the film was formed physically at 3 nm, while the thickness of the electrically stable film was 10 nm from grazing-incidence wide-angle X-ray scattering and dielectric constant analyses. The composite film was applied as a dielectric layer in thin-film transistors (TFTs). The threshold voltage was decreased to 0.27 V compared to the organic field-effect transistor with the single HfO2 dielectric, and the subthreshold swing was as small as 0.05 V/dec with a carrier mobility of 49.2 cm2/V s. The off-current was as low as 10-11 A, and the on/off ratio was as high as 5.5 × 106. This ALD-prepared composite strategy provides a simple and practical way to obtain the high-quality dielectric film, which shows the potential application in the field of microelectronics.

Anisotropic Heavy-Metal-Free Semiconductor Nanocrystals: Synthesis, Properties, and Applications.

Heavy-metal (Cd, Hg, and Pb)-containing semiconductor nanocrystals (NCs) have been explored widely due to their unique optical and electrical properties. However, the toxicity risks of heavy metals can be a drawback of heavy-metal-containing NCs in some applications. Anisotropic heavy-metal-free semiconductor NCs are desirable replacements and can be realized following the establishment of anisotropic growth mechanisms. These anisotropic heavy-metal-free semiconductor NCs can possess lower toxicity risks, while still exhibiting unique optical and electrical properties originating from both the morphological and compositional anisotropy. As a result, they are promising light-emitting materials in use various applications. In this review, we provide an overview on the syntheses, properties, and applications of anisotropic heavy-metal-free semiconductor NCs. In the first section, we discuss hazards of heavy metals and introduce the typical heavy-metal-containing and heavy-metal-free NCs. In the next section, we discuss anisotropic growth mechanisms, including solution-liquid-solid (SLS), oriented attachment, ripening, templated-assisted growth, and others. We discuss mechanisms leading both to morphological anisotropy and to compositional anisotropy. Examples of morphological anisotropy include growth of nanorods (NRs)/nanowires (NWs), nanotubes, nanoplatelets (NPLs)/nanosheets, nanocubes, and branched structures. Examples of compositional anisotropy, including heterostructures and core/shell structures, are summarized. Third, we provide insights into the properties of anisotropic heavy-metal-free NCs including optical polarization, fast electron transfer, localized surface plasmon resonances (LSPR), and so on, which originate from the NCs' anisotropic morphologies and compositions. Finally, we summarize some applications of anisotropic heavy-metal-free NCs including catalysis, solar cells, photodetectors, lighting-emitting diodes (LEDs), and biological applications. Despite the huge progress on the syntheses and applications of anisotropic heavy-metal-free NCs, some issues still exist in the novel anisotropic heavy-metal-free NCs and the corresponding energy conversion applications. Therefore, we also discuss the challenges of this field and provide possible solutions to tackle these challenges in the future.

Correction: Atomically flat semiconductor nanoplatelets for light-emitting applications.

Correction for 'Atomically flat semiconductor nanoplatelets for light-emitting applications' by Bing Bai et al., Chem. Soc. Rev., 2023, 52, 318-360, https://doi.org/10.1039/D2CS00130F.

Efficient and bright green InP quantum dot light-emitting diodes enabled by a self-assembled dipole interface monolayer.

The interfacial state between the hole transport layer (HTL) and quantum dots (QDs) plays a crucial role in the optoelectronic performance of light-emitting diodes. Herein, we reported an efficient and bright green indium phosphide (InP) QD-based light-emitting diode (LED) by introducing a self-assembled monolayer of 4-bromo-2-fluorothiophenol (SAM-BFTP) molecule to improve interfacial charge transport in LED devices. The molecular dipole layer at the interface of the QD layer and HTL not only reduces the energy barrier of holes injected into QDs through vacuum energy level shift but also inhibits the fluorescence quenching of QDs caused by the HTL. Moreover, copper ions doped into phosphomolybdic acid (Cu:PMA) is selected as the hole injection layer (HIL) into the device system based on the SAM-BFTP molecule, and as a result, a green InP QD LED (QLED) with a maximum external quantum efficiency (EQE) of 8.46% and a luminance of 18 356 cd m-2 was realized. This work can inform and underpin the future development of InP-based QLEDs with concurrent high efficiency and brightness.