The morphology and evolution of bipyramidal gold nanoparticles.

We examine the growth and evolution with time of bipyramidal gold nanoparticles grown by a seed-mediated process. The nanoparticles are characterized both by their physical dimensions determined by transmission electron microscopy and by the wavelength position of their localized surface plasmon resonance. Each growth's physical dimensions correspond to particular initial conditions, and we observe two distinct modes of temporal evolution during growth. The effects of varying silver nitrate concentration and growth time are also explored. We observe a linear relationship between the tip radius of curvature and the wavelength of the longitudinal localized surface plasmon resonance (LSPR) peak. Critical parameters for synthesizing bipyramidal nanoparticles with sharp tips and correct length to width ratio are determined.

Novel growth and properties of GaAs nanowires on Si substrates.

Straight, vertically aligned GaAs nanowires were grown on Si(111) substrates coated with thin GaAs buffer layers. We find that the V/III precursor ratio and growth temperature are crucial factors influencing the morphology and quality of buffer layers. A double layer structure, consisting of a thin initial layer grown at low V/III ratio and low temperature followed by a layer grown at high V/III ratio and high temperature, is crucial for achieving straight, vertically aligned GaAs nanowires on Si(111) substrates. An in situ annealing step at high temperature after buffer layer growth improves the surface and structural properties of the buffer layer, which further improves the morphology of the GaAs nanowire growth. Through such optimizations we show that vertically aligned GaAs nanowires can be fabricated on Si(111) substrates and achieve the same structural and optical properties as GaAs nanowires grown directly on GaAs(111)B substrates.

The effect of V/III ratio and catalyst particle size on the crystal structure and optical properties of InP nanowires.

InP nanowires were grown on 111B InP substrates by metal-organic chemical vapour deposition in the presence of colloidal gold particles as catalysts. Transmission electron microscopy and photoluminescence measurements were carried out to investigate the effects of V/III ratio and nanowire diameter on structural and optical properties. Results show that InP nanowires grow preferably in the wurtzite crystal structure than the zinc blende crystal structure with increasing V/III ratio or decreasing diameter. Additionally, time-resolved photoluminescence (TRPL) studies have revealed that wurtzite nanowires show longer recombination lifetimes of approximately 2500 ps with notably higher quantum efficiencies.

Edge enhancement of a phase-conjugate image with a mutually pumped phase conjugator.

Usually edge enhancement of optical images is produced by introduction of loss into the low spatial frequency components of the image-bearing beam in the Fourier plane of a lens. We report on edge-enhanced phase-conjugate images from a mutually pumped conjugator accomplished by spatial filtering in the Fraunhofer diffraction region of the input beams. High-resolution (128-160 lines/mm) edge-enhanced images are obtained through traditional spatial filtering in the Fourier plane and in the Fraunhofer regime. Amplification of these edge-enhanced images is observed with some loss of high spatial resolution (50 lines/mm).

High-resolution phase-conjugate imaging in double-pumped phase conjugators.

Phase-conjugate images with a resolution greater than 250 lines/mm are obtained through the use of a bridge, double-pumped phase conjugator. We demonstrate that this conjugator can carry out imageprocessing tasks, such as the addition and subtraction of complex spatial distributions, with a spatial resolution of >100 lines/mm. These results represent a significant improvement over previously reported resolutions obtained from photorefractive mutually pumped phase conjugators and approach the theoretical limit imposed by the grating spacing and cross talk.