Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications.

A typical method for normally-off operation, the metal-insulator-semiconductor-high electron mobility transistor (MIS-HEMT) has been investigated. Among various approaches, gate recessed MIS-HEMT have demonstrated a high gate voltage sweep and low leakage current characteristics. Despite their high performance, obtaining low-damage techniques in gate recess processing has so far proven too challenging. In this letter, we demonstrate a high current density and high breakdown down voltage of a MIS-HEMT with a recessed gate by the low damage gate recessed etching of atomic layer etching (ALE) technology. After the remaining 3.7 nm of the AlGaN recessed gate was formed, the surface roughness (Ra of 0.40 nm) was almost the same as the surface without ALE (no etching) as measured by atomic force microscopy (AFM). Furthermore, the devices demonstrate state-of-the-art characteristics with a competitive maximum drain current of 608 mA/mm at a VG of 6 V and a threshold voltage of +2.0 V. The devices also show an on/off current ratio of 109 and an off-state hard breakdown voltage of 1190 V. The low damage of ALE technology was introduced into the MIS-HEMT with the recessed gate, which effectively reduced trapping states at the interface to obtain the low on-resistance (Ron) of 6.8 Ω·mm and high breakdown voltage performance.

Modeling contamination conditions in small-scale industrial areas to estimate health savings benefits associated with remediation.

Mercury and dioxin pollution associated with the China Petrochemical Development Corporation's An-shun plant is one of the most severe soil contamination incidents in Taiwan's history. Residents living nearby were exposed to heavy metals and dioxins that led to significant impacts on human health and safety. While many studies related to contamination in large-scale industrial areas have been conducted to evaluate the effects of occupational contaminant exposure, studies related to people who live near small-scale industry areas are less common. In this study, we use the system dynamics modeling to build a media flow pattern for mercury and dioxin in the vicinity of the An-shun plant, simulate the concentrations of the pollutants before and after remediation, and compare the simulated values with the measurements of actual conditions after remediation to evaluate the feasibility and accuracy of the model. This study also estimated the concentration of mercury and dioxin in each food medium to simulate the daily exposure of the human body to these contaminants. Finally, the reduction in mercury and dioxin levels in the study area was used to estimate the total health benefits to the local population. The objective of this study was to evaluate the application of this methodology to small-scale industrial areas as well as improve the decision-making process before, during, and after remediation of contaminated sites. The results of this study revealed the health benefits to residents living in the Annan District after remediation was completed at the An-shun plant were significant.

Direct Measurement of the Tunable Electronic Structure of Bilayer MoS2 by Interlayer Twist.

Using angle-resolved photoemission on micrometer-scale sample areas, we directly measure the interlayer twist angle-dependent electronic band structure of bilayer molybdenum-disulfide (MoS2). Our measurements, performed on arbitrarily stacked bilayer MoS2 flakes prepared by chemical vapor deposition, provide direct evidence for a downshift of the quasiparticle energy of the valence band at the Brillouin zone center (Γ̅ point) with the interlayer twist angle, up to a maximum of 120 meV at a twist angle of ∼40°. Our direct measurements of the valence band structure enable the extraction of the hole effective mass as a function of the interlayer twist angle. While our results at Γ̅ agree with recently published photoluminescence data, our measurements of the quasiparticle spectrum over the full 2D Brillouin zone reveal a richer and more complicated change in the electronic structure than previously theoretically predicted. The electronic structure measurements reported here, including the evolution of the effective mass with twist-angle, provide new insight into the physics of twisted transition-metal dichalcogenide bilayers and serve as a guide for the practical design of MoS2 optoelectronic and spin-/valley-tronic devices.

Enhancing bright-field image of microorganisms by local plasmon of Ag nanoparticle array.

Inspecting biological cells with bright-field light microscopy often engenders a challenge, owing to their optical transparency. We show that imaging contrast can be greatly enhanced as yeast cells are placed on a silver nanoparticle array. Its near- and far-field traits, revealed by electrodynamic simulations, illustrate that the enhancement is attributed to the sensitivity of its plasmonic characteristics to the attached cells. This study demonstrates that the silver nanoparticle array can serve as the agent for concurrently enhancing Raman scattering and imaging contrast of microorganisms for identification and examination.

Direct measurement of the thickness-dependent electronic band structure of MoS2 using angle-resolved photoemission spectroscopy.

We report on the evolution of the thickness-dependent electronic band structure of the two-dimensional layered-dichalcogenide molybdenum disulfide (MoS2). Micrometer-scale angle-resolved photoemission spectroscopy of mechanically exfoliated and chemical-vapor-deposition-grown crystals provides direct evidence for the shifting of the valence band maximum from Γ to K, for the case of MoS2 having more than one layer, to the case of single-layer MoS2, as predicted by density functional theory. This evolution of the electronic structure from bulk to few-layer to monolayer MoS2 had earlier been predicted to arise from quantum confinement. Furthermore, one of the consequences of this progression in the electronic structure is the dramatic increase in the hole effective mass, in going from bulk to monolayer MoS2 at its Brillouin zone center, which is known as the cause for the decreased carrier mobility of the monolayer form compared to that of bulk MoS2.

Interfacial dipole formation and surface-electron confinement in low-coverage self-assembled thiol layers: thiophenol and p-fluorothiophenol on Cu(111).

Model systems of organic self-assembled monolayers are important in achieving full atomic-scale understanding of molecular-electronic interfaces as well as the details of their charge transfer physics. Here we use two-photon photoemission to measure the evolving unoccupied and occupied interfacial electronic structure of two thiolate species, thiophenol and p-fluorothiophenol, adsorbed on Cu(111) as a function of molecular coverage. Our measurements focus on the role of adsorbates in shifting surface polarization and effecting surface electron confinement. As the coverage of each molecule increases, their photoemission-measured work functions exhibit nearly identical behavior up to 0.4-0.5 ML, at which point their behavior diverges; this behavior can be fit to an interfacial bond model for the surface dipole. In addition, our results show the emergence of an interfacial electronic state 0.1-0.2 eV below the Fermi level. This electronic state is attributed to quantum-mechanical-confinement shifting of the Cu(111) surface state by the molecular adsorbates.