RESUMO
The effect of the microstructure of tin-doped indium oxide (ITO) films on their electrochemical performance was studied using three redox probes, tris(2,2'-bipyridyl ruthenium(II) chloride (Ru(bpy)3(2+/3+)), ferrocyanide (Fe(CN)6(4-/3-)), and ferrocenemethanol (FcCH2H(0/+)). ITO films were deposited using dc magnetron sputtering under a variety of conditions that resulted in films having different degrees of crystallinity, crystallographic texture, sheet resistance, surface roughness, and percent tin. It was found that the electron transfer for all three redox probes used in this study was more efficient at polycrystalline films than at amorphous ITO films. This effect is more pronounced at faster scan rates. The crystallographic texture of the ITO films, surface roughness, and a change in sheet resistance from 7.9 to 13.7 ohms/square did not have an effect on electron-transfer kinetics. ITO films deposited using a 1 wt % SnO2 target and having sheet resistance comparable to films deposited using a 10 wt % SnO2 target had dramatically different microstructure from the films with higher weight percent Sn and were shown to perform poorly when used as electrode materials. We believe that the dramatic differences in electron-transfer kinetics observed at the various ITO films can be attributed to either the different density of defect sites along the grain boundaries or defect sites caused by substitutional Sn in the film.
