Note: ε(T) dependence behavior in GaP diodes at high temperatures.

Temperature behavior of static dielectric constant ε in a base area of GaP diode has been studied by processing its capacity-voltage characteristics in the temperature range 300-575 K. The ε(T) function has been determined to be a monotonic function of temperature with a maximum in high temperature region. The temperature behavior of ε could be explained by the effect of mixed electron-ion mechanism of polarization in wide bandgap III-V semiconductor compounds. Temperature dependences ε(T) and Δε(T) obtained within this work would be useful for developers of high-temperature electronics and thermometry.

Note: Determination of temperature dependence of GaP bandgap energy from diode temperature response characteristics.

A simple method of E(g)(T) dependence determination for active areas of semiconductor devices based on wide bandgap semiconductors has been proposed and developed. Verification of the method has been carried out while determining E(g)(T) dependence in a base area of p(+)-n-type GaP diodes in the temperature range 77-523 K. The method is based on U-T characterization of the diodes and calculation of E(g)(T) dependence according to the expression obtained within present study. Satisfactory agreement between experimental and theoretical results has been achieved including references available on gallium phosphide. The method proposed could be applied to experimental data processing in high-temperature thermometry.