Bandgap-universal passivation enables stable perovskite solar cells with low photovoltage loss.

The efficiency and longevity of metal-halide perovskite solar cells are typically dictated by nonradiative defect-mediated charge recombination. In this work, we demonstrate a vapor-based amino-silane passivation that reduces photovoltage deficits to around 100 millivolts (>90% of the thermodynamic limit) in perovskite solar cells of bandgaps between 1.6 and 1.8 electron volts, which is crucial for tandem applications. A primary-, secondary-, or tertiary-amino-silane alone negatively or barely affected perovskite crystallinity and charge transport, but amino-silanes that incorporate primary and secondary amines yield up to a 60-fold increase in photoluminescence quantum yield and preserve long-range conduction. Amino-silane-treated devices retained 95% power conversion efficiency for more than 1500 hours under full-spectrum sunlight at 85°C and open-circuit conditions in ambient air with a relative humidity of 50 to 60%.

Enhancing Pixel Charging Efficiency by Optimizing Thin-Film Transistor Dimensions in Gate Driver Circuits for Active-Matrix Liquid Crystal Displays.

Flat panel displays are electronic displays that are thin and lightweight, making them ideal for use in a wide range of applications, from televisions and computer monitors to mobile devices and digital signage. The Thin-Film Transistor (TFT) layer is responsible for controlling the amount of light that passes through each pixel and is located behind the liquid crystal layer, enabling precise image control and high-quality display. As one of the important parameters to evaluate the display performance, the faster response time provides more frames in a second, which benefits many high-end applications, such as applications for playing games and watching movies. To further improve the response time, the single-pixel charging efficiency is investigated in this paper by optimizing the TFT dimensions in gate driver circuits in active-matrix liquid crystal displays. The accurate circuit simulation model is developed to minimize the signal's fall time (Tf) by optimizing the TFT width-to-length ratio. Our results show that using a driving TFT width of 6790 µm and a reset TFT width of 640 µm resulted in a minimum Tf of 2.6572 µs, corresponding to a maximum pixel charging ratio of 90.61275%. These findings demonstrate the effectiveness of our optimization strategy in enhancing pixel charging efficiency and improving display performance.

Compact Integration of Hydrogen-Resistant a-InGaZnO and Poly-Si Thin-Film Transistors.

The low-temperature poly-Si oxide (LTPO) backplane is realized by monolithically integrating low-temperature poly-Si (LTPS) and amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) in the same display backplane. The LTPO-enabled dynamic refreshing rate can significantly reduce the display's power consumption. However, the essential hydrogenation of LTPS would seriously deteriorate AOS TFTs by increasing the population of channel defects and carriers. Hydrogen (H) diffusion barriers were comparatively investigated to reduce the H content in amorphous indium-gallium-zinc oxide (a-IGZO). Moreover, the intrinsic H-resistance of a-IGZO was impressively enhanced by plasma treatments, such as fluorine and nitrous oxide. Enabled by the suppressed H conflict, a novel AOS/LTPS integration structure was tested by directly stacking the H-resistant a-IGZO on poly-Si TFT, dubbed metal-oxide-on-Si (MOOS). The noticeably shrunken layout footprint could support much higher resolution and pixel density for next-generation displays, especially AR and VR displays. Compared to the conventional LTPO circuits, the more compact MOOS circuits exhibited similar characteristics.

Determination of liquid-crystal polar anchoring energy by electrical measurements.

We propose a simple method for the determination of liquid-crystal (LC) polar anchoring energy by electrical measurements. The basic idea of this method is a two-channel scheme for capacitance measurements. The first channel uses one cell with a planar LC cell, while the second a LC cell with vertical alignment. One of the LC cells can have a high pretilt angle. The proposed method allows investigating anchoring properties of both planar and vertical aligned LC materials. Simultaneous measurements of the two cells compensate all volume effects in LC bulk and provide a good opportunity to study directly the LC-surface interaction. The method can be applied for LC cells, which do not have uniform azimuthal orientation. We used this method to investigate the polar anchoring properties of photoaligning material before and after illumination and for LC structures with a high pretilt angle.