RESUMO
This paper presents fabrication and packaging of a capacitive micromachined ultrasonic transducer (CMUT) using anodically bondable low temperature co-fired ceramic (LTCC). Anodic bonding of LTCC with Au vias-silicon on insulator (SOI) has been used to fabricate CMUTs with different membrane radii, 24 µm, 25 µm, 36 µm, 40 µm and 60 µm. Bottom electrodes were directly patterned on remained vias after wet etching of LTCC vias. CMUT cavities and Au bumps were micromachined on the Si part of the SOI wafer. This high conductive Si was also used as top electrode. Electrical connections between the top and bottom of the CMUT were achieved by Au-Au bonding of wet etched LTCC vias and bumps during anodic bonding. Three key parameters, infrared images, complex admittance plots, and static membrane displacement, were used to evaluate bonding success. CMUTs with a membrane thickness of 2.6 µm were fabricated for experimental analyses. A novel CMUT-IC packaging process has been described following the fabrication process. This process enables indirect packaging of the CMUT and integrated circuit (IC) using a lateral side via of LTCC. Lateral side vias were obtained by micromachining of fabricated CMUTs and used to drive CMUTs elements. Connection electrodes are patterned on LTCC side via and a catheter was assembled at the backside of the CMUT. The IC was mounted on the bonding pad on the catheter by a flip-chip bonding process. Bonding performance was evaluated by measurement of bond resistance between pads on the IC and catheter. This study demonstrates that the LTCC and LTCC side vias scheme can be a potential approach for high density CMUT array fabrication and indirect integration of CMUT-IC for miniature size packaging, which eliminates problems related with direct integration.
RESUMO
The electrode/organic interface is one of the key factors in attaining superior device performance in organic electronics, and inserting a tailor-made layer can dramatically modify its properties. The use of nano-composite (NC) materials leads to many advantages by combining materials with the objective of obtaining a desirable combination of properties. In this context, zinc oxide/polyethyleneimine (ZnO:PEI) NC film was incorporated as an interfacial layer into inverted bottom-emission organic light emitting diodes (IBOLEDs) and fully optimized. For orange-red emissive MEH-PPV based IBOLEDs, a high power efficiency of 6.1 lm W-1 at a luminance of 1000 cd m-2 has been achieved. Notably, the external quantum efficiency (EQE) increased from 0.1 to 4.8% and the current efficiency (CE) increased from 0.2 to 8.7 cd A-1 with rise in luminance (L) from 1000 to above 10 000 cd m-2 levels when compared to that of pristine ZnO-based devices. An identical device architecture containing a ZnO:PEI NC layer has also been used to successfully fabricate green and blue emissive IBOLEDs. The significant enhancement in the inverted device performance, in terms of luminance and efficiency, is attributed to a good energy-level alignment between the cathode/organic interface which leads to effective carrier balance, resulting in efficient radiative-recombination.
