Combined Modification of Dual-Phase Li4Ti5O12-TiO2 by Lithium Zirconates to Optimize Rate Capabilities and Cyclability.

The low electrical conductivity and ordinary lithium-ion transfer capability of Li4Ti5O12 restrict its application to some degree. In this work, dual-phase Li4Ti5O12-TiO2 (LTOT) was modified by composite zirconates of Li2ZrO3, Li6Zr2O7 (LZO) to boost the rate capabilities and cyclability. When the homogeneous mixture of LiNO3, Zr(NO3)4·5H2O and LTOT was roasted at 700 °C for 5 h, the obtained composite achieved a superior reversible capacity of 183.2 mAh g-1 to the pure Li4Ti5O12 after cycling at 100 mA g-1 for 100 times due to the existence of a scrap of TiO2. Meanwhile, when the composite was cycled by consecutively doubling the current density between 100 and 1600 mA g-1, the corresponding reversible capacities are 183.2, 179.1, 176.5, 173.3, and 169.3 mAh g-1, signifying the prominent rate capabilities. Even undergoing 1400 charge/discharge cycles at 500 mA g-1, a reversible capacity of 144.7 mAh g-1 was still attained, denoting splendid cyclability. From a series of comparative experiments and systematic characterizations, the formation of LZO meliorated both the Li+ migration kinetics and electrical conductivity on account of the concomitant superficial Zr4+ doping, responsible for the comprehensive elevation of the electrochemical performance.

First principles study of electronic transport properties in novel FeB2 flake-based nanodevices.

First-principles calculations can provide theoretical support for the promising applications of innovative two-probe devices based on FeB2 flakes at different temperatures. Results indicate that these FeB2-based devices not only exhibit a prominent transport capacity and a predictable strong current, but also possess outstanding electrical conductivity compared with many flake-based devices. Devices with FeB2 flakes at temperatures not above 1000 K have advantageous transmission and low-voltage current because of the delocalization of electronic states, essentially resulting from their undeformed flake structures. Importantly, Fe atoms are pivotal in the electron transport of FeB2-based devices. The edge effect of the flakes is also analyzed. These new-type FeB2 flakes can realize substantial value in nanoscale functional devices.

Random composites of nickel networks supported by porous alumina toward double negative materials.

Random composites with nickel networks hosted randomly in porous alumina are proposed to realize double negative materials. The random composite for DNMs (RC-DNMs) can be prepared by typical processing of material, which makes it possible to explore new DNMs and potential applications, and to feasibly tune their electromagnetic parameters by controlling their composition and microstructure. Hopefully, various new RC-DNMs with improved performance will be proposed in the future.

Porous BCN nanotubular fibers: growth and spatially resolved cathodoluminescence.

Porous boron carbonitride nanotubular fibers with BCN stoichiometry and homogeneous B, C, and N species distribution were fabricated via the CVD method. Spatially resolved cathodoluminescence measurements on individual nanostructures revealed intense ultraviolet emission centered at 319 nm, suggesting the characteristics of a semiconductor with a band gap of 3.89 eV. It is believed that the present nanostructures may have a variety of applications in ultraviolet optical devices, hydrogen storage systems, and field emission apparatus.

Growth of semiconducting GaN hollow spheres and nanotubes with very thin shells via a controllable liquid gallium-gas interface chemical reaction.

An in situ liquid gallium-gas interface chemical reaction route has been developed to synthesize semiconducting hollow GaN nanospheres with very small shell size by carefully controlling the synthesis temperature and the ammonia reaction gas partial pressure. In this process the gallium droplet does not act as a catalyst but rather as a reactant and a template for the formation of hollow GaN structures. The diameter of the synthesized hollow GaN spheres is typically 20-25 nm and the shell thickness is 3.5-4.5 nm. The GaN nanotubes obtained at higher synthesis temperatures have a length of several hundreds of nanometers and a wall thickness of 3.5-5.0 nm. Both the hollow GaN spheres and nanotubes are polycrystalline and are composed of very fine GaN nanocrystalline particles with a diameter of 3.0-3.5 nm. The room-temperature photoluminescence (PL) spectra for the synthesized hollow GaN spheres and nanotubes, which have a narrow size distribution, display a sharp, blue-shifted band-edge emission peak at 3.52 eV (352 nm) due to quantum size effects.

Hollow boron nitride (BN) nanocages and BN-nanocage-encapsulated nanocrystals.

Hollow boron nitride (BN) nanocages (nanospheres, image on the left) and BN-nanocage-encapsulated GaN nanocrystals (right) have been synthesized by using a homemade B-N-O precursors. The as-prepared BN hollow nanocages have typically spherical morphologies with diameters ranging from 30 to 200 nm. The nanocages have crystalline structures. Peanutlike nanocages with double walls have also been observed; their internal space is divided into seperated compartments by the internal walls. The method is extended to sheathe nanocrystals with BN nanocages; BN-shell/GaN-core nanostructures have been successfully fabriacted. The method may be generally applicable to the fabrication BN-sheathed nanocrystals.