Wearable Biofeedback System to Induce Desired Walking Speed in Overground Gait Training.

Biofeedback systems have been extensively used in walking exercises for gait improvement. Past research has focused on modulating the wearer's cadence, gait variability, or symmetry, but none of the previous works has addressed the problem of inducing a desired walking speed in the wearer. In this paper, we present a new, minimally obtrusive wearable biofeedback system (WBS) that uses closed-loop vibrotactile control to elicit desired changes in the wearer's walking speed, based on the predicted user response to anticipatory and delayed feedback. The performance of the proposed control was compared to conventional open-loop rhythmic vibrotactile stimulation with N = 10 healthy individuals who were asked to complete a set of walking tasks along an oval path. The closed-loop vibrotactile control consistently demonstrated better performance than the open-loop control in inducing desired changes in the wearer's walking speed, both with constant and with time-varying target walking speeds. Neither open-loop nor closed-loop stimuli affected natural gait significantly, when the target walking speed was set to the individual's preferred walking speed. Given the importance of walking speed as a summary indicator of health and physical performance, the closed-loop vibrotactile control can pave the way for new technology-enhanced protocols for gait rehabilitation.

Promising features of low-temperature grown Ge nanostructures on Si(001) substrates.

High-quality Ge nanostructures are obtained by molecular beam epitaxy of Ge on Si(001) substrates at 200 °C and ex situ annealing at 400 °C. Their structural properties are comprehensively characterized by atomic force microscopy, transmission electron microscopy and Raman spectroscopy. It is disclosed that they are almost defect free except for some defects at the Ge/Si interface and in the subsequent Si capping layer. The misfit strain in the nanostructure is substantially relaxed. Dramatically strong photoluminescence (PL) from the Ge nanostructures is observed. Detailed analyses on the power- and temperature-dependent PL spectra, together with a self-consistent calculation, indicate the confinement and the high quantum efficiency of excitons within the Ge nanostructures. Our results demonstrate that the Ge nanostructures obtained via the present feasible route may have great potential in optoelectronic devices for monolithic optical-electronic integration circuits.

Electrostatic effect of Au nanoparticles on near-infrared photoluminescence from Si/SiGe due to nanoscale metal/semiconductor contact.

Photoluminescence (PL) from Si and SiGe is comprehensively modified by Au NPs under excitation without surface plasmon resonance. Moreover, the PL sensitively depends on the size of the Au NPs, the excitation power and the thickness of the Si layer between the Au NPs and SiGe. A model is proposed in terms of the electrostatic effects of Au NPs naturally charged by electron transfer through the nanoscale metal/semiconductor Schottky junction without an external bias or external injection of carriers. The model accounts well for all the unique PL features. It also reveals that Au NPs can substantially modify the energy band structures, distribution and transition of carriers in the nanoscale region below the Au NPs. Our results demonstrate that Au NPs on semiconductors can efficiently modulate light-matter interaction.