Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors.

Here, an engineered tunneling layer enhanced photocurrent multiplication through the impact ionization effect was proposed and experimentally demonstrated on the graphene/silicon heterojunction photodetectors. With considering the suitable band structure of the insulation material and their special defect states, an atomic layer deposition (ALD) prepared wide-bandgap insulating (WBI) layer of AlN was introduced into the interface of graphene/silicon heterojunction. The promoted tunneling process from this designed structure demonstrated that can effectively help the impact ionization with photogain not only for the regular minority carriers from silicon, but also for the novel hot carries from graphene. As a result, significantly enhanced photocurrent as well as simultaneously decreased dark current about one order were accomplished in this graphene/insulation/silicon (GIS) heterojunction devices with the optimized AlN thickness of ~15 nm compared to the conventional graphene/silicon (GS) devices. Specifically, at the reverse bias of -10 V, a 3.96-A W-1 responsivity with the photogain of ~5.8 for the peak response under 850-nm light illumination, and a 1.03-A W-1 responsivity with ∼3.5 photogain under the 365 nm ultraviolet (UV) illumination were realized, which are even remarkably higher than those in GIS devices with either Al2O3 or the commonly employed SiO2 insulation layers. This work demonstrates a universal strategy to fabricate broadband, low-cost and high-performance photo-detecting devices towards the graphene-silicon optoelectronic integration.

Light-Trapping Engineering for the Enhancements of Broadband and Spectra-Selective Photodetection by Self-Assembled Dielectric Microcavity Arrays.

Light manipulation has drawn great attention in photodetectors towards the specific applications with broadband or spectra-selective enhancement in photo-responsivity or conversion efficiency. In this work, a broadband light regulation was realized in photodetectors with the improved spectra-selective photo-responsivity by the optimally fabricated dielectric microcavity arrays (MCAs) on the top of devices. Both experimental and theoretical results reveal that the light absorption enhancement in the cavities is responsible for the improved sensitivity in the detectors, which originated from the light confinement of the whispering-gallery-mode (WGM) resonances and the subsequent photon coupling into active layer through the leaky modes of resonances. In addition, the absorption enhancements in specific wavelength regions were controllably accomplished by manipulating the resonance properties through varying the effective optical length of the cavities. Consequently, a responsivity enhancement up to 25% within the commonly used optical communication and sensing region (800 to 980 nm) was achieved in the MCA-decorated silicon positive-intrinsic-negative (PIN) devices compared with the control ones. This work well demonstrated that the leaky modes of WGM resonant dielectric cavity arrays can effectively improve the light trapping and thus responsivity in broadband or selective spectra for photodetection and will enable future exploration of their applications in other photoelectric conversion devices.