Effect of Fluorination Position on the Crystalline Structure and Stretchability of Intrinsically Stretchable Polymer Semiconductors.

A clear understanding of the structure-property relationship of intrinsically stretchable polymer semiconductors (ISPSs) is essential for developing high-performance polymer-based electronics. Herein, we investigate the effect of the fluorination position on the crystalline structure, charge-carrier mobility, and stretchability of polymer semiconductors based on a benzodithiophene-co-benzotriazole configuration. Although four different polymer semiconductors showed similar field-effect mobilities for holes (µ ≈ 0.1 cm2 V-1 s-1), polymer semiconductors with nonfluorinated backbones exhibited improved thin-film stretchability confirmed with crack onset strain (εc ≈ 20%-50%) over those of fluorinated counterparts (εc ≤ 10%). The enhanced stretchability of polymer semiconductors with a nonfluorinated backbone is presumably due to the higher face-on crystallite ratio and π-π stacking distance in the out-of-plane direction than those of the other polymer semiconductors. These results provide new insights into how the thin-film stretchability of polymer semiconductors can be improved by using precise molecular tailoring without deteriorating electrical properties.

A Semi-Crystalline Polymer Semiconductor with Thin Film Stretchability Exceeding 200.

Despite the emerging scientific interest in polymer-based stretchable electronics, the trade-off between the crystallinity and stretchability of intrinsically stretchable polymer semiconductors-charge-carrier mobility increases as crystallinity increases while stretchability decreases-hinders the development of high-performance stretchable electronics. Herein, a highly stretchable polymer semiconductor is reported that shows concurrently improved thin film crystallinity and stretchability upon thermal annealing. The polymer thin films annealed at temperatures higher than their crystallization temperatures exhibit substantially improved thin film stretchability (> 200%) and hole mobility (≥ 0.2 cm2  V-1  s-1 ). The simultaneous enhancement of the crystallinity and stretchability is attributed to the thermally-assisted structural phase transition that allows the formation of edge-on crystallites and reinforces interchain noncovalent interactions. These results provide new insights into how the current crystallinity-stretchability limitation can be overcome. Furthermore, the results will facilitate the design of high-mobility stretchable polymer semiconductors for high-performance stretchable electronics.

Flexible Organic Photodetectors with Mechanically Robust Zinc Oxide Nanoparticle Thin Films.

Zinc oxide nanoparticle (ZnO-NP) thin films have been intensively used as electron transport layers (ETLs) in organic optoelectronic devices, but their moderate mechanical flexibility hinders their application to flexible electronic devices. This study reveals that the multivalent interaction between ZnO-NPs and multicharged conjugated electrolytes, such as diphenylfluorene pyridinium bromide derivative (DFPBr-6), can significantly improve the mechanical flexibility of ZnO-NP thin films. Intermixing ZnO-NPs and DFPBr-6 facilitates the coordination between bromide anions (from the DFPBr-6) and zinc cations on ZnO-NP surfaces, forming Zn2+-Br- bonds. Different from a conventional electrolyte (e.g., KBr), DFPBr-6 with six pyridinium ionic side chains holds the Br--chelated ZnO-NPs adjacent to DFP+ through Zn2+-Br--N+ bonds. Consequently, ZnO-NP:DFPBr-6 thin films exhibit improved mechanical flexibility with a critical bending radius as low as 1.5 mm under tensile bending conditions. Flexible organic photodetectors with ZnO-NP:DFPBr-6 thin films as ETLs demonstrate reliable device performances with high R (0.34 A/W) and D* (3.03 × 1012 Jones) even after 1000 times repetitive bending at a bending radius of 4.0 mm, whereas devices with ZnO-NP and ZnO-NP:KBr ETLs yield >85% reduction in R and D* under the same bending condition.