Magnetization reversal and interlayer exchange coupling in ferromagnetic metal/semiconductor Fe/GaMnAs hybrid bilayers.

We report a detailed study of magnetization reversal in Fe/GaMnAs bilayers carried out by magnetotransport measurements. Specifically, we have used planar Hall resistance (PHR), which is highly sensitive to the direction of magnetization, and is therefore ideally suited for tracking magnetization as it reorients between successive easy axes in the two magnetic layers during reversal. These reorientations take place separately in the two magnetic layers, resulting in a series of different magnetization alignments (parallel or orthogonal) during reversal, providing a series of stable PHR states. Our results indicate that the magnetic anisotropy of the structure is dominated by cubic symmetry of both layers, showing two in-plane easy axes, but with significantly different energy barriers between the easy orientations. Importantly, a careful analysis of the PHR results has also revealed the presence of strong ferromagnetic interlayer exchange coupling (IEC) between the two magnetic layers, indicating that although magnetization reorients separately in each layer, this process is not independent, since the behavior of one layer is influenced by its adjacent magnetic neighbor. The ability to design and realize multiple PHR states, as observed in this investigation, shows promise for engineering Fe/GaMnAs bilayer structures for multinary magnetic memory devices and related multinary logic elements.

Field-free manipulation of magnetization alignments in a Fe/GaAs/GaMnAs multilayer by spin-orbit-induced magnetic fields.

We investigate the process of selectively manipulating the magnetization alignment in magnetic layers in the Fe/GaAs/GaMnAs structure by current-induced spin-orbit (SO) magnetic field. The presence of such fields manifests itself through the hysteretic behavior of planar Hall resistance observed for two opposite currents as the magnetization in the structure switches directions. In the case of the Fe/GaAs/GaMnAs multilayer, hystereses are clearly observed when the magnetization switches direction in the GaMnAs layer, but are negligible when magnetization transitions occur in Fe. This difference in the effect of the SO-field in the two magnetic layers provides an opportunity to control the magnetization in one layer (in the presence case in GaMnAs) by a current, while the magnetization in the other layer (i.e., Fe) remains fixed. Owing to our ability to selectively control the magnetization in the GaMnAs layer, we are able to manipulate the relative spin configurations in our structure between collinear and non-collinear alignments simply by switching the current direction even in the absence of an external magnetic field.

Non-volatile logic gates based on planar Hall effect in magnetic films with two in-plane easy axes.

We discuss the use of planar Hall effect (PHE) in a ferromagnetic GaMnAs film with two in-plane easy axes as a means for achieving novel logic functionalities. We show that the switching of magnetization between the easy axes in a GaMnAs film depends strongly on the magnitude of the current flowing through the film due to thermal effects that modify its magnetic anisotropy. Planar Hall resistance in a GaMnAs film with two in-plane easy axes shows well-defined maxima and minima that can serve as two binary logic states. By choosing appropriate magnitudes of the input current for the GaMnAs Hall device, magnetic logic functions can then be achieved. Specifically, non-volatile logic functionalities such as AND, OR, NAND, and NOR gates can be obtained in such a device by selecting appropriate initial conditions. These results, involving a simple PHE device, hold promise for realizing programmable logic elements in magnetic electronics.

Nanostructures Significantly Enhance Thermal Transport across Solid Interfaces.

The efficiency of thermal transport across solid interfaces presents large challenges for modern technologies such as thermal management of electronics. In this paper, we report the first demonstration of significant enhancement of thermal transport across solid interfaces by introducing interfacial nanostructures. Analogous to fins that have been used for macroscopic heat transfer enhancement in heat exchangers, the nanopillar arrays patterned at the interface help interfacial thermal transport by the enlarged effective contact area. Such a benefit depends on the geometry of nanopillar arrays (e.g., pillar height and spacing), and a thermal boundary conductance enhancement by as much as ∼88% has been measured using the time-domain thermoreflectance technique. Theoretical analysis combined with low-temperature experiments further indicates that phonons with low frequency are less influenced by the interfacial nanostructures due to their large transmissivity, but the benefit of the nanostructure is fully developed at room temperature where higher frequency phonons dominate interfacial thermal transport. The findings from this work can potentially be generalized to benefit real applications such as the thermal management of electronics.

Observation of uniaxial anisotropy along the [100] direction in crystalline Fe film.

We report an observation of uniaxial magnetic anisotropy along the [100] crystallographic direction in crystalline Fe film grown on Ge buffers deposited on a (001) GaAs substrate. As expected, planar Hall resistance (PHR) measurements reveal the presence of four in-plane magnetic easy axes, indicating the dominance of the cubic anisotropy in the film. However, systematic mapping of the PHR hysteresis loops observed during magnetization reversal at different field orientations shows that the easy axes along the and are not equivalent. Such breaking of the cubic symmetry can only be ascribed to the presence of uniaxial anisotropy along the direction of the Fe film. Analysis of the PHR data measured as a function of orientation of the applied magnetic field allowed us to quantify the magnitude of this uniaxial anisotropy field as Oe. Although this value is only 1.5% of cubic anisotropy field, its presence significantly changes the process of magnetization reversal, revealing the important role of the uniaxial anisotropy in Fe films. Breaking of the cubic symmetry in the Fe film deposited on a Ge buffer is surprising, and we discuss possible reason for this unexpected behavior.

Enhanced light scattering and trapping effect of Ag nanowire mesh electrode for high efficient flexible organic solar cell.

Ag nanowire (NW) mesh is used as transparent conducting electrode for high efficient flexible organic solar cells (OSCs). The Ag NW mesh electrode facilitates light scattering and trapping, allowing enhancement of light absorption in the active layer. OSCs incorporating Ag NW mesh electrode exhibit maximum power conversion efficiency (PCE) of 4.47%, 25%, higher than that of OSCs with a conventional ITO electrode (3.63%).

Effect of geometric lattice design on optical/electrical properties of transparent silver grid for organic solar cells.

Silver (Ag) grid transparent electrode is one of the most promising transparent conducting electrodes (TCEs) to replace conventional indium tin oxide (ITO). We systematically investigate an effect of geometric lattice modifications on optical and electrical properties of Ag grid electrode. The reference Ag grid with 5 µm width and 100 µm pitch (duty of 0.05) prepared by conventional photo-lithography and lift-off processes shows the sheet resistance of 13.27 Ω/sq, transmittance of 81.1%, and resultant figure of merit (FOM) of 129.05. Three different modified Ag grid electrodes with stripe added-mesh (SAM), triangle-added mesh (TAM), and diagonal-added mesh (DAM) are suggested to improve optical and electrical properties. Although all three of SAM, TAM, and DAM Ag grid electrodes exhibit the lower transmittance values of about 72 - 77%, they showed much decreased sheet resistance of 6 - 8 Ω/sq. As a result, all of the lattice-modified Ag grid electrodes display significant improvement of FOM and the highest value of 171.14 is obtained from DAM Ag grid, which is comparable to that of conventional ITO electrode (175.46). Also, the feasibility of DAM Ag gird electrode for use in organic solar cell is confirmed by finite difference time domain (FDTD) simulations. Unlike a conventional ITO electrode, DAM Ag grid electrode can induce light scattering and trapping due to the diffuse transmission that compensates for the loss in optical transparency, resulting in comparable light absorption in the photo active layer of poly(3-hexylthiophene) (P3HT): [6,6]-phenyl-C61-butyric acid methyl ester (PC60BM). P3HT:PC60BM based OSCs with the DAM Ag grid electrode were fabricated, which also showed the potential for ITO-free transparent electrode.

Cu ion ink for a flexible substrate and highly conductive patterning by intensive pulsed light sintering.

Direct printing techniques that utilize nanoparticles to mitigate environmental pollution and reduce the processing time of the routing and formation of electrodes have received much attention lately. In particular, copper (Cu) nanoink using Cu nanoparticles offers high conductivity and can be prepared at low cost. However, it is difficult to produce homogeneous nanoparticles and ensure good dispersion within the ink. Moreover, Cu particles require a sintering process over an extended time at a high temperature due to high melting temperature of Cu. During this process, the nanoparticles oxidize quickly in air. To address these problems, the authors developed a Cu ion ink that is free of Cu particles or any other impurities. It consequently does not require separate dispersion stability. In addition, the developed ink is environmentally friendly and can be sintered even at low temperatures. The Cu ion ink was sintered on a flexible substrate using intense pulsed light (IPL), which facilitates large-area, high-speed calcination at room temperature and at atmospheric pressures. As the applied light energy increases, the Cu2O phase diminishes, leaving only the Cu phase. This is attributed to the influence of formic acid (HCOOH) on the Cu ion ink. Only the Cu phase was observed above 40 J cm(-2). The Cu-patterned film after sintering showed outstanding electrical resistivity in a range of 3.21-5.27 µΩ·cm at an IPL energy of 40-60 J cm(-2). A spiral-type micropattern with a line width of 160 µm on a PI substrate was formed without line bulges or coffee ring effects. The electrical resistivity was 5.27 µΩ·cm at an energy level of 40.6 J cm(-2).

Use of the asymmetric planar hall resistance of an Fe film for possible multi-value memory device applications.

Systematic planar Hall measurements have been performed on a ferromagnetic Fe film grown on a standard (001) GaAs substrate at room temperature. The angular dependence of the planar Hall effect revealed the presence of both four-fold (cubic) and two-fold (uniaxial) anisotropies in the 7 nm thick Fe film. The dominance of the four-fold symmetric anisotropy, however, provided four magnetic easy axes near the (100) direction, which results in a two step switching phenomenon in the magnetization reversal process. An interesting asymmetric hysteresis loop was observed in the planar Hall resistance (PHR) when the turning point of the field scan is set at the value in the region of the second transition. The intermediate resistance states appearing in the asymmetric PHR loop were understood in terms of mutli-domain structures formed during the second switching of magnetization. Such multi-domain structure of the Fe film showing robust time stability provided additional Hall resistance states, which can be used for multi-valued memory device applications.