Differential impact of serum total bilirubin level on cerebral atherosclerosis and cerebral small vessel disease.

BACKGROUND: A low serum total bilirubin (T-bil) level is associated with an increased risk of atherosclerosis. However, the differential impact of the serum T-bil level on cerebral atherosclerosis and cerebral small vessel disease (SVD) is still unclear. METHODS: We evaluated serum T-bil levels from 1,128 neurologically healthy subjects. Indices of cerebral atherosclerosis (extracranial arterial stenosis [ECAS] and intracranial arterial stenosis [ICAS]), and indices of SVD (silent lacunar infarct [SLI], and moderate-to-severe white matter hyperintensities [msWMH]) were evaluated by the use of brain magnetic resonance imaging (MRI) and MR angiography. RESULTS: In logistic regression analysis after adjusting for confounding variables, subjects within middle T-bil (odds ratio [OR]: 0.63; 95% CI: 0.41-0.97) and high T-bil tertiles (OR: 0.54; 95% CI: 0.33-0.86) showed a lower prevalence of ECAS than those in a low T-bil tertile. Although subjects with a high T-bil tertile had a lower prevalence of ICAS than those with a low T-bil tertile, the statistical significance was marginal after adjusting for confounding variables. There were no significant differences in the proportions of subjects with SLI and msWMH across serum T-bil tertile groups. CONCLUSIONS: The serum T-bil level is negatively associated with cerebral atherosclerosis, especially extracranial atherosclerosis, but not with SVD.

Effect of lightly doped drain structure on P-channel metal induced lateral crystallization thin film transistors.

A Lightly Doped Drain (LDD) structure is known to be very effective in preventing hot electrons in modern NMOS transistors. In this work, the lightly doped region was formed in poly TFT by using a separate LDD mask aligned to a gate mask. The misalignment can be calculated to be about 1.5 microm, and depending on the location of the V(d) application between the source and drain, an LDD or Lightly Doped Source (LDS) structure can be realized on the same TFT. In this way, we can make a perfect comparison between these two structures. It turned out that the LDD is mainly responsible for the low leakage current, and no more than 0.5 microm of the lightly doped region is necessary to lower the leakage current down to less than 5 x 10(-11) amps at V(d) = 10 volts. Typically, the on-current of MILC TFT is more than 10(-4) amps, but 2.5 microm LDS decreases it to below 10(-7) amps.