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1.
Evolution of the interband absorption threshold with the density of a two-dimensional electron gas.
Brown SA; Young JF; Brum JA; Hawrylak P; Wasilewski Z.
Phys Rev B Condens Matter ; 54(16): R11082-R11085, 1996 Oct 15.
Artigo em Inglês | MEDLINE | ID: mdl-9984991
2.
Intersubband optical response of semiconductor quantum wells dressed by strong infrared fields.
Sadeghi SM; Young JF; Meyer J.
Phys Rev B Condens Matter ; 51(19): 13349-13356, 1995 May 15.
Artigo em Inglês | MEDLINE | ID: mdl-9978139
3.
Carrier-carrier scattering rates within nonequilibrium optically injected semiconductor plasmas.
Young JF; Gong T; Fauchet PM; Kelly PJ.
Phys Rev B Condens Matter ; 50(4): 2208-2215, 1994 Jul 15.
Artigo em Inglês | MEDLINE | ID: mdl-9976435
4.
Intrinsic dephasing times of photoexcited electron-valence-hole pairs near the Fermi edge of a degenerate electron gas in quantum wells.
Hawrylak P; Young JF; Brockmann P.
Phys Rev B Condens Matter ; 49(19): 13624-13628, 1994 May 15.
Artigo em Inglês | MEDLINE | ID: mdl-10010301
5.
Direct measurements of many-body effects on free-carrier-LO-phonon interactions in GaAs quantum wells.
Brockmann P; Young JF; Hawrylak P; van Driel HM.
Phys Rev B Condens Matter ; 48(15): 11423-11426, 1993 Oct 15.
Artigo em Inglês | MEDLINE | ID: mdl-10007463
6.
Intervalley scattering time in type-II AlxGa1-xAs/AlAs multiple quantum wells.
Charbonneau S; Young JF; Coleridge PT.
Phys Rev B Condens Matter ; 48(3): 1932-1935, 1993 Jul 15.
Artigo em Inglês | MEDLINE | ID: mdl-10008565
7.
Many-body treatment of hot-electron scattering from quasiequilibrium electron-hole plasmas and coupled plasmon-longitudinal-optic-phonon modes in GaAs.
Young JF; Kelly PJ.
Phys Rev B Condens Matter ; 47(11): 6316-6329, 1993 Mar 15.
Artigo em Inglês | MEDLINE | ID: mdl-10004595
8.
Studies of a 96.9-nm laser in neutral cesium.
Barty CP; Yin GY; Field JE; King DA; Hahn KH; Young JF; Harris SE.
Phys Rev A ; 46(7): 4286-4296, 1992 Oct 01.
Artigo em Inglês | MEDLINE | ID: mdl-9908630
9.
Influence of scattering on the resonant transfer of holes between two-dimensional states.
Brockmann P; Young JF; Wasilewski Z; Buchanan M.
Phys Rev B Condens Matter ; 44(24): 13787-13790, 1991 Dec 15.
Artigo em Inglês | MEDLINE | ID: mdl-9999591
10.
Experimental determination of the X6 shear tetragonal deformation potential of AlAs.
Charbonneau S; Young JF; Coleridge PT; Kettles B.
Phys Rev B Condens Matter ; 44(15): 8312-8314, 1991 Oct 15.
Artigo em Inglês | MEDLINE | ID: mdl-9998769
11.
Femtosecond gain dynamics due to initial thermalization of hot carriers injected at 2 eV in GaAs.
Gong T; Fauchet PM; Young JF; Kelly PJ.
Phys Rev B Condens Matter ; 44(12): 6542-6545, 1991 Sep 15.
Artigo em Inglês | MEDLINE | ID: mdl-9998524
12.
116-nm H2 laser pumped by a traveling-wave photoionization electron source.
Benerofe SJ; Yin GY; Barty CP; Young JF; Harris SE.
Phys Rev Lett ; 66(24): 3136-3139, 1991 Jun 17.
Artigo em Inglês | MEDLINE | ID: mdl-10043708
13.
Correlation of hot-phonon and hot-carrier kinetics in Ge on a picosecond time scale.
Othonos A; van Driel HM; Young JF; Kelly PJ.
Phys Rev B Condens Matter ; 43(8): 6682-6690, 1991 Mar 15.
Artigo em Inglês | MEDLINE | ID: mdl-9998110
14.
Determination of Xz-Xx,y energy separation and intervalley relaxation times in type-II AlxGa1-xAs/AlAs multiple quantum wells.
Young JF; Charbonneau S; Coleridge PT.
Phys Rev B Condens Matter ; 42(17): 11434-11437, 1990 Dec 15.
Artigo em Inglês | MEDLINE | ID: mdl-9995449
15.
Interaction of longitudinal-optic phonons with free holes as evidenced in Raman spectra from Be-doped p-type GaAs.
Wan K; Young JF.
Phys Rev B Condens Matter ; 41(15): 10772-10779, 1990 May 15.
Artigo em Inglês | MEDLINE | ID: mdl-9993488
16.
Young et al. reply.
Young JF; Wood BM; Aers GC; Devine RL; Liu HC; Landheer D; Buchanan M; SpringThorpe AJ; Mandeville P.
Phys Rev Lett ; 62(10): 1208, 1989 Mar 06.
Artigo em Inglês | MEDLINE | ID: mdl-10039606
17.
12.8-eV laser in neutral cesium.
Barty CP; King DA; Yin GY; Hahn KH; Field JE; Young JF; Harris SE.
Phys Rev Lett ; 61(19): 2201-2204, 1988 Nov 07.
Artigo em Inglês | MEDLINE | ID: mdl-10039014
18.
Determination of charge accumulation and its characteristic time in double-barrier resonant tunneling structures using steady-state photoluminescence.
Young JF; Wood BM; Aers GC; Devine RL; Liu HC; Landheer D; Buchanan M; SpringThorpe AJ; Mandeville P.
Phys Rev Lett ; 60(20): 2085-2088, 1988 May 16.
Artigo em Inglês | MEDLINE | ID: mdl-10038253
19.
Effects of band structure on the energy exchange rate between quasithermal electron and hole distributions in semiconductors.
Young JF; Kelly P; Henry NL.
Phys Rev B Condens Matter ; 36(8): 4535-4538, 1987 Sep 15.
Artigo em Inglês | MEDLINE | ID: mdl-9943457
20.
Picosecond Raman scattering from photoexcited plasmas in GaAs and InP: The important role of interfacial recombination.
Young JF; Wan K; SpringThorpe AJ; Mandeville P.
Phys Rev B Condens Matter ; 36(2): 1316-1319, 1987 Jul 15.
Artigo em Inglês | MEDLINE | ID: mdl-9942953
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