SLAC microresonator RF (SMuRF) electronics: A tone-tracking readout system for superconducting microwave resonator arrays.

We describe the newest generation of the SLAC Microresonator RF (SMuRF) electronics, a warm digital control and readout system for microwave-frequency resonator-based cryogenic detector and multiplexer systems, such as microwave superconducting quantum interference device multiplexers (µmux) or microwave kinetic inductance detectors. Ultra-sensitive measurements in particle physics and astronomy increasingly rely on large arrays of cryogenic sensors, which in turn necessitate highly multiplexed readout and accompanying room-temperature electronics. Microwave-frequency resonators are a popular tool for cryogenic multiplexing, with the potential to multiplex thousands of detector channels on one readout line. The SMuRF system provides the capability for reading out up to 3328 channels across a 4-8 GHz bandwidth. Notably, the SMuRF system is unique in its implementation of a closed-loop tone-tracking algorithm that minimizes RF power transmitted to the cold amplifier, substantially relaxing system linearity requirements and effective noise from intermodulation products. Here, we present a description of the hardware, firmware, and software systems of the SMuRF electronics, comparing achieved performance with science-driven design requirements. In particular, we focus on the case of large-channel-count, low-bandwidth applications, but the system has been easily reconfigured for high-bandwidth applications. The system described here has been successfully deployed in lab settings and field sites around the world and is baselined for use on upcoming large-scale observatories.

Sign-Reversing Hall Effect in Atomically Thin High-Temperature Bi_{2.1}Sr_{1.9}CaCu_{2.0}O_{8+δ} Superconductors.

We developed novel techniques to fabricate atomically thin Bi_{2.1}Sr_{1.9}CaCu_{2.0}O_{8+δ} van der Waals heterostructures down to two unit cells while maintaining a transition temperature T_{c} close to the bulk, and carry out magnetotransport measurements on these van der Waals devices. We find a double sign change of the Hall resistance R_{xy} as in the bulk system, spanning both below and above T_{c}. Further, we observe a drastic enlargement of the region of sign reversal in the temperature-magnetic field phase diagram with decreasing thickness of the device. We obtain quantitative agreement between experimental R_{xy}(T,B) and the predictions of the vortex dynamics-based description of Hall effect in high-temperature superconductors both above and below T_{c}.

Controlled Electrochemical Intercalation of Graphene/h-BN van der Waals Heterostructures.

Electrochemical intercalation is a powerful method for tuning the electronic properties of layered solids. In this work, we report an electrochemical strategy to controllably intercalate lithium ions into a series of van der Waals (vdW) heterostructures built by sandwiching graphene between hexagonal boron nitride (h-BN). We demonstrate that encapsulating graphene with h-BN eliminates parasitic surface side reactions while simultaneously creating a new heterointerface that permits intercalation between the atomically thin layers. To monitor the electrochemical process, we employ the Hall effect to precisely monitor the intercalation reaction. We also simultaneously probe the spectroscopic and electrical transport properties of the resulting intercalation compounds at different stages of intercalation. We achieve the highest carrier density >5 × 1013 cm2 with mobility >103 cm2/(V s) in the most heavily intercalated samples, where Shubnikov-de Haas quantum oscillations are observed at low temperatures. These results set the stage for further studies that employ intercalation in modifying properties of vdW heterostructures.