Experimentally revealing anomalously large dipoles in the dielectric of a quantum circuit.

Quantum two-level systems (TLSs) intrinsic to glasses induce decoherence in many modern quantum devices, such as superconducting qubits. Although the low-temperature physics of these TLSs is usually well-explained by a phenomenological standard tunneling model of independent TLSs, the nature of these TLSs, as well as their behavior out of equilibrium and at high energies above 1 K, remain inconclusive. Here we measure the non-equilibrium dielectric loss of TLSs in amorphous silicon using a superconducting resonator, where energies of TLSs are varied in time using a swept electric field. Our results show the existence of two distinct ensembles of TLSs, interacting weakly and strongly with phonons, where the latter also possesses anomalously large electric dipole moment. These results may shed new light on the low temperature characteristics of amorphous solids, and hold implications to experiments and applications in quantum devices using time-varying electric fields.

Isotropic and Anisotropic g-Factor Corrections in GaAs Quantum Dots.

We experimentally determine isotropic and anisotropic g-factor corrections in lateral GaAs single-electron quantum dots. We extract the Zeeman splitting by measuring the tunnel rates into the individual spin states of an empty quantum dot for an in-plane magnetic field with various strengths and directions. We quantify the Zeeman energy and find a linear dependence on the magnetic field strength that allows us to extract the g factor. The measured g factor is understood in terms of spin-orbit interaction induced isotropic and anisotropic corrections to the GaAs bulk g factor. Experimental detection and identification of minute band-structure effects in the g factor is of significance for spin qubits in GaAs quantum dots.

Controlled Fabrication of DNA Molecular Templates for In Situ Formation and Measurement of Ultrathin Metal Nanostructures.

Fabrication of ultrathin metal nanostructures usually requires some combination of high-vacuum deposition and postgrowth processing, which precludes access to nanostructures of ultrasmall cross sections for most materials. DNA nanowires (NWs) are versatile insulating templates with intrinsic sub-10 nm line width. Here, we demonstrate a method of DNA template fabrication with precise control over the location and orientation of the DNA NWs. We further demonstrate that this template can be used to support formation of ultrathin metal NWs for derivative nanodevices: a metal is incrementally deposited, and electrical transport measurement is performed in situ at each step. The results show a homogeneous metal NW is obtained at a thickness as small as 0.9 nm with a cross-section of only a few nm2. The high degree of control in the location, separation, and orientation of the DNA NWs affords this method great promise in fabricating complex nanodevices based on metal NWs.

Machine learning enables completely automatic tuning of a quantum device faster than human experts.

Variability is a problem for the scalability of semiconductor quantum devices. The parameter space is large, and the operating range is small. Our statistical tuning algorithm searches for specific electron transport features in gate-defined quantum dot devices with a gate voltage space of up to eight dimensions. Starting from the full range of each gate voltage, our machine learning algorithm can tune each device to optimal performance in a median time of under 70 minutes. This performance surpassed our best human benchmark (although both human and machine performance can be improved). The algorithm is approximately 180 times faster than an automated random search of the parameter space, and is suitable for different material systems and device architectures. Our results yield a quantitative measurement of device variability, from one device to another and after thermal cycling. Our machine learning algorithm can be extended to higher dimensions and other technologies.

Robust Gapless Surface State against Surface Magnetic Impurities on (Bi_{0.5}Sb_{0.5})_{2}Te_{3} Evidenced by In Situ Magnetotransport Measurements.

Despite extensive experimental and theoretical efforts, the important issue of the effects of surface magnetic impurities on the topological surface state of a topological insulator (TI) remains unresolved. We elucidate the effects of Cr impurities on epitaxial thin films of (Bi_{0.5}Sb_{0.5})_{2}Te_{3}: Cr adatoms are incrementally deposited onto the TI held in ultrahigh vacuum at low temperatures, and in situ magnetoconductivity and Hall effect measurements are performed at each increment with electrostatic gating. In the experimentally identified surface transport regime, the measured minimum electron density shows a nonmonotonic evolution with the Cr density (n_{Cr}): it first increases and then decreases with n_{Cr}. This unusual behavior is ascribed to the dual roles of the Cr as ionized impurities and electron donors, having competing effects of enhancing and decreasing the electronic inhomogeneities in the surface state at low and high n_{Cr}, respectively. The magnetoconductivity is obtained for different n_{Cr} on one and the same sample, which yields clear evidence that the weak antilocalization effect persists and the surface state remains gapless up to the highest n_{Cr}, contrary to the expectation that the deposited Cr should break the time-reversal symmetry and induce a gap opening at the Dirac point.

Spectroscopy of Quantum Dot Orbitals with In-Plane Magnetic Fields.

We show that in-plane magnetic-field-assisted spectroscopy allows extraction of the in-plane orientation and full 3D size parameters of the quantum mechanical orbitals of a single electron GaAs lateral quantum dot with subnanometer precision. The method is based on measuring the orbital energies in a magnetic field with various strengths and orientations in the plane of the 2D electron gas. From such data, we deduce the microscopic confinement potential landscape and quantify the degree by which it differs from a harmonic oscillator potential. The spectroscopy is used to validate shape manipulation with gate voltages, agreeing with expectations from the gate layout. Our measurements demonstrate a versatile tool for quantum dots with one dominant axis of strong confinement.

Hyperfine-phonon spin relaxation in a single-electron GaAs quantum dot.

Understanding and control of the spin relaxation time T1 is among the key challenges for spin-based qubits. A larger T1 is generally favored, setting the fundamental upper limit to the qubit coherence and spin readout fidelity. In GaAs quantum dots at low temperatures and high in-plane magnetic fields B, the spin relaxation relies on phonon emission and spin-orbit coupling. The characteristic dependence T1 ∝ B-5 and pronounced B-field anisotropy were already confirmed experimentally. However, it has also been predicted 15 years ago that at low enough fields, the spin-orbit interaction is replaced by the coupling to the nuclear spins, where the relaxation becomes isotropic, and the scaling changes to T1 ∝ B-3. Here, we establish these predictions experimentally, by measuring T1 over an unprecedented range of magnetic fields-made possible by lower temperature-and report a maximum T1 = 57 ± 15 s at the lowest fields, setting a record electron spin lifetime in a nanostructure.

Nonlinear Hall effect as a signature of electronic phase separation in the semimetallic ferromagnet EuB(6).

This work reports a study of the nonlinear Hall effect (HE) in the semimetallic ferromagnet EuB(6). A distinct switch in its Hall resistivity slope is observed in the paramagnetic phase, which occurs at a single critical magnetization over a wide temperature range. The observation is interpreted as the point of percolation for entities of a more conducting and magnetically ordered phase in a less ordered background. With an increasing applied magnetic field, the conducting regions either increase in number or expand beyond the percolation limit, hence increasing the global conductivity and effective carrier density. An empirical two-component model provides excellent scaling and a quantitative fit to the HE data and may be applicable to other correlated electron systems.