Effect of Annealing Temperature on the Performance of SnO2 Thin Film Transistors Prepared by Spray Pyrolysis.

We fabricated SnO2 thin film transistors on thermally oxidized p-type silicon substrates by low-cost spray pyrolysis. The effect of annealing temperatures on electrical characteristics of SnO2 thin film transistors were investigated. Thermal annealing at higher temperatures induced a negative shift of the threshold voltage (VT) and an increase in the saturation mobility. It was found that the device annealed at 450 °C exhibited a good electrical performance with the field-effect mobility of 0.19 cm2/Vs, the threshold voltage of 2.5 V, and the on/off current ratio of 10(3).