RESUMO
The reliability and stability of MEMS electrostatic comb resonators have become bottlenecks in practical applications. However, there are few studies that comprehensively consider the nonlinear dynamic behavior characteristics of MEMS systems and devices in a coupled field so that the related simulation accuracy is low and cannot meet the needs of design applications. In this paper, to avoid the computational complexity and the uncertainty of the results of three-field direct coupling and take into the damping nonlinearity caused by coupled fields, a novel electrostatic-fluid-structure three-field indirect coupling method is proposed. Taking an actual microcomb resonant electric field sensor as an example, an electrostatic-fluid-structure multiphysics coupling 3D finite element simulation model is established. After considering the influence of nonlinear damping concerning the large displacement of the structure and the microscale effect, multifield coupling dynamics research is carried out using COMSOL software. The multiorder eigenmodes, resonant frequency, vibration amplitude, and the distribution of fluid load of the microresonator are calculated and analyzed. The simulated data of resonance frequency and displacement amplitude are compared with the measured data. The results show that the fluid load distribution of the microelectrostatic comb resonator along the thickness direction is high in the middle and low on both sides. The viscous damping of the sensor under atmospheric pressure is mainly composed of the incompressible flow damping of the comb teeth, which is an order of magnitude larger than those of other parts. Compared with the measured data, it can be concluded that the amplitude and resonance frequency of the microresonator considering the nonlinear damping force and residual thermal stress are close to the experimental values (amplitude error: 15.47%, resonance frequency error: 12.48%). This article provides a reference for studies on the dynamic characteristics of electrostatically driven MEMS devices.
RESUMO
Thus far, despite the development of electric field sensors (EFSs) such as field mills, optoelectronic EFSs and microelectromechanical system (MEMS)-based EFSs, no sensor can accurately measure an electric field in space due to the existence of space charge and the influence of charge attachment. To measure a spatial synthetic electric field in an ion flow field, a double potential independent differential EFS based on MEMS is proposed. Compared with other EFSs, this method has the advantages of independent potential (without grounding) and the ability to support the measurement of the synthetic ion flow electric field in space. First, to analyse the charge distribution after the sensor is involved exposed to an electric field, a simulation model was constructed. Then, given the redistribution of the spatial electric field in space and the influence of the surface charge on the sensor, the quantitative relationship between the electric field to be measured and that measured by the proposed sensor was obtained. To improve the performance of the EFS, a set of synthetic field strength sensor calibration systems that consider spatial ion flow injection was established. Furthermore, the parameter λ, which is related to the relative position of the differential chips, was determined. Finally, a series of comparative experiments indicated that the differential EFS highlighted in the present study exhibits good linearity and accuracy.
RESUMO
The measurement of intense E-fields is a fundamental need in various research areas. Integrated optical E-field sensors (IOESs) have important advantages and are potentially suitable for intense E-field detection. This paper comprehensively reviews the development and applications of several types of IOESs over the last 30 years, including the Mach-Zehnder interferometer (MZI), coupler interferometer (CI) and common path interferometer (CPI). The features of the different types of IOESs are compared, showing that the MZI has higher sensitivity, the CI has a controllable optical bias, and the CPI has better temperature stability. More specifically, the improvement work of applying IOESs to intense E-field measurement is illustrated. Finally, typical uses of IOESs in the measurement of intense E-fields are demonstrated, including application areas such as E-fields with different frequency ranges in high-voltage engineering, simulated nuclear electromagnetic pulse in high-power electromagnetic pulses, and ion-accelerating field in high-energy physics.
