The integration of Gß and MAPK signaling cascade in zygote development.

Cells respond to many signals with a limited number of signaling components. Heterotrimeric G proteins and MAPK cascades are universally used by eukaryotic cells to transduce signals in various developmental processes or stress responses by activating different effectors. MAPK cascade is integrated with G proteins by scaffold protein during plant immunity. However, the molecular relationship between G proteins and MAPK modules in plant development is still unclear. In this study, we demonstrate that Arabidopsis Gß protein AGB1 interacts with MPK3 and 6, MKK4 and 5, as well as the regulatory domains of YODA (YDA), the upstream MEKK of MKK4/5. Remarkably, YDA interacts with the plasma membrane associated SHORT SUSPENSOR (SSP) through its N- and C-terminal region in vitro and in vivo. Additionally, genetic analysis shows that AGB1 functions together with MPK3/6 signaling cascade during the asymmetric division of the zygote. These data indicate that Gß may function likely as a scaffold, through direct physical interaction with the components of the MPK signaling module in plant development. Our results provide new insights into the molecular functions of G protein and will advance the understanding of the complex mechanism of kinase signaling cascades.

Uncovering Male Fertility Transition Responsive miRNA in a Wheat Photo-Thermosensitive Genic Male Sterile Line by Deep Sequencing and Degradome Analysis.

MicroRNAs (miRNAs) are endogenous small RNAs which play important negative regulatory roles at both the transcriptional and post-transcriptional levels in plants. Wheat is the most commonly cultivated plant species worldwide. In this study, RNA-seq analysis was used to examine the expression profiles of miRNA in the spikelets of photo-thermosenisitive genic male sterile (PTGMS) wheat line BS366 during male fertility transition. Through mapping on their corresponding precursors, 917-7,762 novel miRNAs were found in six libraries. Six novel miRNAs were selected for examination of their secondary structures and confirmation by stem-loop RT-PCR. In a differential expression analysis, 20, 22, and 58 known miRNAs exhibited significant differential expression between developmental stages 1 (secondary sporogenous cells had formed), 2 (all cells layers were present and mitosis had ceased), and 3 (meiotic division stage), respectively, of fertile and sterile plants. Some of these differential expressed miRNAs, such as tae-miR156, tae-miR164, tae-miR171, and tae-miR172, were shown to be associated with their targets. These targets were previously reported to be related to pollen development and/or male sterility, indicating that these miRNAs and their targets may be involved in the regulation of male fertility transition in the PTGMS wheat line BS366. Furthermore, target genes of miRNA cleavage sites were validated by degradome sequencing. In this study, a possible signal model for the miRNA-mediated signaling pathway during the process of male fertility transition in the PTGMS wheat line BS366 was developed. This study provides a new perspective for understanding the roles of miRNAs in male fertility in PTGMS lines of wheat.

Room-Temperature Multiferroics and Thermal Conductivity of 0.85BiFe1-2xTixMgxO3-0.15CaTiO3 Epitaxial Thin Films (x = 0.1 and 0.2).

Thin films of 0.85BiFe1-2xTixMgxO3-0.15CaTiO3 (x = 0.1 and 0.2, abbreviated to C-1 and C-2, respectively) have been fabricated on (001) SrTiO3 substrate with and without a conductive La0.7Sr0.3MnO3 buffer layer. The X-ray θ-2θ and ϕ scans, atomic force microscopy, and cross-sectional transmission electron microscopy confirm the (001) epitaxial nature of the thin films with very high growth quality. Both the C-1 and C-2 thin films show well-shaped magnetization-magnetic field hysteresis at room temperature, with enhanced switchable magnetization values of 145.3 and 42.5 emu/cm3, respectively. The polarization-electric loops and piezoresponse force microscopy measurements confirm the room-temperature ferroelectric nature of both films. However, the C-1 films illustrate a relatively weak ferroelectric behavior and the poled states are easy to relax, whereas the C-2 films show a relatively better ferroelectric behavior with stable poled states. More interestingly, the room-temperature thermal conductivity of C-1 and C-2 films are measured to be 1.10 and 0.77 W/(m·K), respectively. These self-consistent multiferroic properties and thermal conductivities are discussed by considering the composition-dependent content and migration of Fe-induced electrons and/or charged point defects. This study not only provides multifunctional materials with excellent room-temperature magnetic, ferroelectric, and thermal conductivity properties but may also stimulate further work to develop BiFeO3-based materials with unusual multifunctional properties.

Temperature dependent structures and properties of Bi0.5Na0.5TiO3-based lead free piezoelectric composite.

The thermal depolarization around 100 °C of the Bi0.5Na0.5TiO3-based piezoelectric solid solutions leads to the disappearance of macroscopic ferroelectric/piezoelectric properties and remains a long-standing obstacle for their actual applications. In this communication, we report lead-free piezoelectric composites of 0.94Bi0.5Na0.5TiO3-0.06BaTiO3:0.5ZnO (BNT-6BT:0.5ZnO, where 0.5 is the mole ratio of ZnO to BNT-6BT) with deferred thermal depolarization, which is experimentally confirmed by systematic temperature dependent dielectric, ferroelectric, piezoelectric measurements. Especially, based on temperature dependent X-ray diffraction measurements on unpoled and poled samples, thermal depolarization is confirmed to have no relationship with the structural phase transition, the possible mechanism for the deferred thermal depolarization is correlated with the ZnO-induced local electric field which can suppress the depolarization field. We believe our results may be helpful for understanding the origin of thermal depolarization in BNT-based piezoelectric materials, and thus provide an effective way to overcoming this obstacle.

Space-charge Effect on Electroresistance in Metal-Ferroelectric-Metal capacitors.

Resistive switching through electroresistance (ER) effect in metal-ferroelectric-metal (MFM) capacitors has attracted increasing interest due to its potential applications as memories and logic devices. However, the detailed electronic mechanisms resulting in large ER when polarisation switching occurs in the ferroelectric barrier are still not well understood. Here, ER effect up to 1000% at room temperature is demonstrated in C-MOS compatible MFM nanocapacitors with a 8.8 nm-thick poly(vinylidene fluoride) (PVDF) homopolymer ferroelectric, which is very promising for silicon industry integration. Most remarkably, using theory developed for metal-semiconductor rectifying contacts, we derive an analytical expression for the variation of interfacial barrier heights due to space-charge effect that can interpret the observed ER response. We extend this space-charge model, related to the release of trapped charges by defects, to MFM structures made of ferroelectric oxides. This space-charge model provides a simple and straightforward tool to understand recent unusual reports. Finally, this work suggests that defect-engineering could be an original and efficient route for tuning the space-charge effect and thus the ER performances in future electronic devices.

Switchable dielectric, piezoelectric, and second-harmonic generation bistability in a new improper ferroelectric above room temperature.

Imidazolium periodate (IPI) is found to be an improper ferroelectric. It shows bistable properties simultaneously in three channels of dielectricity, piezoelectricity, and second-harmonic generation within the temperature window 300-310 K.

A molecular ferroelectric thin film of imidazolium perchlorate that shows superior electromechanical coupling.

Molecular ferroelectric thin films are highly desirable for their easy and environmentally friendly processing, light weight, and mechanical flexibility. A thin film of imidazolium perchlorate processed from aqueous solution is an excellent molecular ferroelectric with high spontaneous polarization, high Curie temperature, low coercivity, and superior electromechanical coupling. These attributes make it a molecular alternative to perovskite ferroelectric films in sensing, actuation, data storage, electro-optics, and molecular/flexible electronics.