Silicone optical elements for cost-effective freeform solar concentration.

The use of silicone optical elements is demonstrated for a concentrated photovoltaic system. These components show over 96% transmission through most of the solar spectrum and excellent temperature stability. Unique moldability enables the use of complex freeform designs. A light, compact, and cost-effective concentrated photovoltaic system based on silicone optics is proposed. In this system, air-plasma treatment is utilized to overcome the mechanical properties of silicone and difficulties with coating to reduce Fresnel loss. Lens arrays and waveguides are fabricated by injection molding following freeform optical design by LightTools. First-order characterizations are also performed.

An 18.2%-efficient black-silicon solar cell achieved through control of carrier recombination in nanostructures.

Silicon nanowire and nanopore arrays promise to reduce manufacturing costs and increase the power conversion efficiency of photovoltaic devices. So far, however, photovoltaic cells based on nanostructured silicon exhibit lower power conversion efficiencies than conventional cells due to the enhanced photocarrier recombination associated with the nanostructures. Here, we identify and separately measure surface recombination and Auger recombination in wafer-based nanostructured silicon solar cells. By identifying the regimes of junction doping concentration in which each mechanism dominates, we were able to design and fabricate an independently confirmed 18.2%-efficient nanostructured 'black-silicon' cell that does not need the antireflection coating layer(s) normally required to reach a comparable performance level. Our results suggest design rules for efficient high-surface-area solar cells with nano- and microstructured semiconductor absorbers.

Low-power bacteriorhodopsin-silicon n-channel metal-oxide field-effect transistor photoreceiver.

A bacteriorhodopsin (bR)-silicon n-channel metal-oxide field-effect transistor (NMOSFET) monolithically integrated photoreceiver is demonstrated. The bR film is selectively formed on an external gate electrode of the transistor by electrophoretic deposition. A modified biasing circuit is incorporated, which helps to match the resistance of the bR film to the input impedance of the NMOSFET and to shift the operating point of the transistor to coincide with the maximum gain. The photoreceiver exhibits a responsivity of 4.7 mA/W.