Ultra-thin freestanding graphene films for efficient thermal insulation and electromagnetic interference shielding.

The preparation of freestanding graphene films by convenient and environmentally friendly preparation methods is still the focus of attention in various industrial fields. Here, we first select electrical conductivity, yield and defectivity as evaluation indicators and systematically explore the factors affecting the preparation of high-performance graphene by electrochemical exfoliation, then further post-process it under volume-limited conditions by microwave reduction. Finally, we obtained a self-supporting graphene film with an irregular interlayer structure but excellent performance. It is found that the electrolyte is ammonium sulfate, the concentration is 0.2 M, the voltage is 8 V, and the pH is 11, which were the optimal conditions for preparing low-oxidation graphene. The square resistance of the EG was 1.6 Ω sq-1, and the yield could be 65%. In addition, electrical conductivity and joule heat were significantly improved after microwave post-processing, especially its electromagnetic shielding performance with a shielding coefficient of 53 dB able to be achieved. At the same time, the thermal conductivity is as low as 0.05 W m-1 K-1. The mechanism for the improvement of electromagnetic shielding performance is that (1) microwave reduction effectively enhances the conductivity of the graphene sheet overlapping network; (2) the gas generated by the instantaneous high temperature causes a large number of void structures between the graphene layers, and the irregular interlayer stacking structure makes the reflective surface more disordered, thereby prolonging the reflection path of electromagnetic waves among layers. In summary, this simple and environmentally friendly preparation strategy has good practical application prospects for graphene film products in flexible wearables, intelligent electronic devices, and electromagnetic wave protection.

Co-dosing Ozone and Deionized Water as Oxidant Precursors of ZnO Thin Film Growth by Atomic Layer Deposition.

Characteristics of atomic layer deposition (ALD)-grown ZnO thin films on sapphire substrates with and without three-pulsed ozone (O3) as oxidant precursor and post-deposition thermal annealing (TA) are investigated. Deposition temperature and thickness of ZnO epilayers are 180 °C and 85 nm, respectively. Post-deposition thermal annealing is conducted at 300 °C in the ambience of oxygen (O2) for 1 h. With strong oxidizing agent O3 and post-deposition TA in growing ZnO, intrinsic strain and stress are reduced to 0.49% and 2.22 GPa, respectively, with extremely low background electron concentration (9.4 × 1015 cm-3). This is originated from a lower density of thermally activated defects in the analyses of thermal quenching of the integrated intensity of photoluminescence (PL) spectra. TA further facilitates recrystallization forming more defect-free grains and then reduces strain and stress state causing a remarkable decrease of electron concentration and melioration of surface roughness.