Laser-induced damage threshold of ZnGeP2 crystal for (sub)picosecond 1-µm laser pulse.

The laser-induced damage threshold (LIDT) was measured for a Z n G e P 2 crystal exposed to 0.3-9.5 ps 1030-nm laser pulses. Single-pulse LIDT fluence was ∼0.22J/c m 2 for the laser pulse widths of 0.3-3.5 ps and increased until 0.76J/c m 2 for 9.5-ps pulses. Multi-pulse LIDT fluence for 0.3-ps pulses at repetition frequencies in the range of 100 Hz-1 kHz was ∼0.053J/c m 2 and decreased further at higher, multi-kHz, pulse repetition frequencies. The coating of the Z n G e P 2 crystal surface with an anti-reflection multi-layer thin film increased the multi-pulse LIDT by one order of magnitude, up to 0.62J/c m 2 (about 2T W/c m 2). The significant increase in LIDT coupled with a decrease in reflection losses provides a way to cardinally improve efficiency of frequency conversion of popular 1-µm ultrashort pulses into mid- and far-IR ranges with a thin AR-coated Z n G e P 2 crystal sample.

Visualization of volumetric defects and dynamic processes in crystals by digital IR-holography.

The observation and study of defects of single-crystal multicomponent optical material is necessary to determine the qualitative characteristics and optical properties of a material and to diagnose its manufacturing procedures. This paper utilizes the digital IR-holography to measure the geometrical parameters, shape, and location of defects as well as to characterize them. The paper illustrates the examples of physical, chemical, and optical inhomogeneities. Also, the paper presents the results of the study of dynamic processes in optical elements under the influence of laser radiation with high power density. The possibility of using the digital holographic technology to determine the dynamics of optical breakdown in the ZnGeP2 single crystal is illustrated, namely, to estimate the speed and time of breakdown development, which can be used to interpret the mechanisms of breakdown development.