RESUMO
In this paper, (Ca0.7Sr0.3)(Zr0.8Ti0.2)O3 thin films were fabricated by RF-sputtering at various deposition temperatures from 300 °C to 700 °C to determine the optimal deposition condition. The XRD data confirmed the successful fabrication of crystalline CSZT thin films. Based on the dielectric properties of the fabricated thin films, the optimal deposition temperature was 700 °C, which resulted in a film with a relatively high dielectric constant and low dielectric loss (28.4 and 0.006) (at 1 MHz). Moreover, the CSZT thin film deposited at 700 °C showed stable dielectric properties at microwave frequencies. With increasing deposition temperature, the roughness of the CSZT thin film increased but the leakage current of the CSZT thin film decreased, simultaneously.
RESUMO
We investigated the annealing effect of CSZT films on Pt and Cu substrates fabricated by aerosol deposition (AD) process. The fabricated films were annealed at 100, 250, and 500 degrees C, and all XRD patterns revealed CSZT phase with a perovskite structure, with the exception of the films on Cu substrates annealed at 250 and 500 degrees C, which presented a CuO secondary phase. The dielectric constant and the dielectric loss of the CSZT films on the Pt substrates were observed to increase slightly as the annealing temperature increased. However, the Cu substrates annealed at 250 degrees C presented lower values. The leakage current of films on the Pt substrate decreased as the annealing temperature increased. On the other hand, the films on a Cu substrate increased as the annealing temperature increased, and these results showed that the films on Cu substrates have inferior properties due to the presence of CuO.
