Electrically pumped InGaAs/GaAs quantum well microdisk lasers directly grown on Si(100) with Ge/GaAs buffer.

In this work we report, to the best of our knowledge, the first quantum well electrically-pumped microdisk lasers monolithically deposited on (001)-oriented Si substrate. The III-V laser structure was epitaxially grown by MOCVD on silicon with an intermediate MBE-grown Ge buffer. Microlasers with an InGaAs/GaAs quantum well active region were tested at room temperature. Under pulsed injection, lasing is achieved in microlasers with diameters of 23, 27, and 31 µm with a minimal threshold current density of 28 kA/cm2. Lasing spectrum is predominantly single-mode with a dominant mode linewidth as narrow as 35 pm.

Mode selection in InAs quantum dot microdisk lasers using focused ion beam technique.

Optically pumped InAs quantum dot microdisk lasers with grooves etched on their surface by a focused ion beam are studied. It is shown that the radial grooves, depending on their length, suppress the lasing of specific radial modes of the microdisk. Total suppression of all radial modes, except for the fundamental radial one, is also demonstrated. The comparison of laser spectra measured at 78 K before and after ion beam etching for a microdisk of 8 µm in diameter shows a sixfold increase of mode spacing, from 2.5 to 15.5 nm, without a significant decrease of the dominant mode quality factor. Numerical simulations are in good agreement with experimental results.

Control of emission spectra in quantum dot microdisk/microring lasers.

Focused ion beam is applied to quantum dot based microresonators to form pits or groove on their surface. The emission spectra of the resonators based lasers are significantly thinned out after the ion beam milling, and one or two modes become dominant instead of a group of modes having comparable intensities. The linewidth of the lasing mode is kept unchanged, whereas the lasing threshold demonstrates an insignificant growth.

Ordered porous diamond films fabricated by colloidal crystal templating.

We have developed a colloidal crystal templating method for preparation of diamond films with 2D and 3D ordered porous structures. The technological process involved breaks down into (a) impregnation into the pores of silica colloidal crystal (opal) films of detonation nanodiamond (DND) particles from their hydrosol; (b) microwave plasma-enhanced chemical vapor deposition (MWPECVD) regrowth with diamond of pores with high DND filling; (c) Ar(+) ion dry etching of fragments of shells of coalesced diamond crystallites which form in the course of MWPECVD on the surface of the SiO(2) beads making up the outer surface of a film and (d) wet etching of the SiO(2) template in aqueous HF solution. The final samples are either connected to the substrate or free-standing films of various thicknesses having 2D or 3D ordered porous structures. The morphology of the diamond films fabricated by this method replicates the pore network of the opal template. Raman measurements confirm the diamond structure of the synthesized ordered porous material.