Manipulating and measuring single atoms in the Maltese cross geometry.

Background: Optical microtraps at the focus of high numerical aperture (high-NA) imaging systems enable efficient collection, trapping, detection and manipulation of individual neutral atoms for quantum technology and studies of optical physics associated with super- and sub-radiant states.  The recently developed "Maltese cross" geometry (MCG) atom trap uses four in-vacuum lenses to achieve four-directional high-NA optical coupling to single trapped atoms and small atomic arrays. This article presents the first extensive characterisation of atomic behaviour in a MCG atom trap. Methods: We employ a MCG system optimised for high coupling efficiency and characterise the resulting properties of the trap and trapped atoms.  Using current best practices, we measure occupancy, loading rate, lifetime, temperature, fluorescence anti-bunching and trap frequencies. We also use the four-directional access to implement a new method to map the spatial distribution of collection efficiency from high-NA optics:  we use the two on-trap-axis lenses to produce a 1D optical lattice, the sites of which are stochastically filled and emptied by the trap loading process. The two off-trap-axis lenses are used for imaging and single-mode collection.  Correlations of single-mode and imaging fluorescence signals are then used to map the single-mode collection efficiency. Results: We observe trap characteristics comparable to what has been reported for single-atom traps with one- or two-lens optical systems. The collection efficiency distribution in the axial and transverse directions is directly observed to be in agreement with expected collection efficiency distribution from Gaussian beam optics. Conclusions: The multi-directional high-NA access provided by the Maltese cross geometry enables complex manipulations and measurements not possible in geometries  with fewer  directions of  access,  and can  be  achieved  while  preserving other trap characteristics such as lifetime, temperature, and trap size.

Imaging low-dimensional nanostructures by very low voltage scanning electron microscopy: ultra-shallow topography and depth-tunable material contrast.

We demonstrate the implications of very low voltage operation (<1 kV) of a scanning electron microscope for imaging low-dimensional nanostructures where standard voltages (2-5 kV) involve a beam penetration depth comparable to the cross-section of the nanostructures. In this common situation, image sharpness, contrast quality and resolution are severely limited by emission of secondary electrons far from the primary beam incidence point. Oppositely, very low voltage operation allows reducing the beam-specimen interaction to an extremely narrow and shallow region around the incidence point, enabling high-resolution and ultra-shallow topographic contrast imaging by high-angle backscattered electrons detection on the one hand, and depth-tunable material contrast imaging by low-angle backscattered electrons detection on the other. We describe the performance of these imaging approaches on silicon nanowires obtained by the vapor-liquid-solid mechanism. Our experimental results, supported by Monte Carlo simulations of backscattered electrons emission from the nanowires, reveal the self-assembly of gold-silica core-shell nanostructures at the nanowire tips without any ad-hoc thermal oxidation step. This result demonstrates the capacity of very low voltage operation to provide optimum sharpness, contrast and resolution in low-dimensional nanostructures and to gather information about nanoscaled core-shell conformations otherwise impossible to obtain by standard scanning electron microscopy alone.