Regulation of heterogeneous electron transfer reactivity by defect engineering through electrochemically induced brominating addition.

Enhancing the electrochemical activity of graphene holds great significance for expanding its applications in various electrochemistry fields. In this study, we have demonstrated a facile and quantitative approach for modulating the defect density of single-layer graphene (SLG) via an electrochemically induced bromination process facilitated by cyclic voltammetry. This controlled defect engineering directly impacts the heterogeneous electron transfer (HET) rate of SLG. By utilizing Raman spectroscopy and scanning electrochemical microscopy (SECM), we have established a correlation between the HET kinetics and both the defect density (nD) and mean distance between defects (LD) of SLG. The variation of the HET rate (k0) with the defect density manifested a distinctive three-stage behavior. Initially, k0 increased slightly with the increasing nD, and then it experienced a rapid increase as nD further increased. However, once the defect density surpassed a critical value of about 1.8 × 1012 cm-2 (LD < 4.2 nm), k0 decreased rapidly. Notably, the results revealed a remarkable 35-fold enhancement of k0 under the optimal defect density conditions compared to pristine SLG. This research paves the way for controllable defect engineering as a powerful strategy to enhance the electrochemical activity of graphene, opening up new possibilities for its utilization in a wide range of electrochemical applications.

Electrochemical regulation of the band gap of single layer graphene: from semimetal to semiconductor.

As a semimetal with a zero band gap and single-atom-scale thickness, single layer graphene (SLG) has excellent electron conductivity on its basal plane. If the band gap could be opened and regulated controllably, SLG would behave as a semiconductor. That means electronic elements or even electronic circuits with single-atom thickness could be expected to be printed on a wafer-scale SLG substrate, which would bring about a revolution in Moore's law of integrated circuits, not by decreasing the feature size of line width, but by piling up the atomic-scale-thickness of an SLG circuit board layer by layer. Employing scanning electrochemical microscopy (SECM), we have demonstrated that the electrochemically induced brominating addition reaction can open and regulate the band gap of SLG by forming SLG bromide (SLGBr). The SLG/SLGBr/SLG Schottky junction shows excellent performance in current rectification, and the rectification potential region can be regulated by tuning the degree of bromination of SLG. This work provides a feasible and effective way to regulate the band gap of SLG, which would open new applications for SLG in micro-nano electronics and ultra-large-scale integrated circuits (ULSI).

Electrochemical Storage of Atomic Hydrogen on Single Layer Graphene.

If hydrogen can be stored and carried safely at a high density, hydrogen-fuel cells offer effective solutions for vehicles. The stable chemisorption of atomic hydrogen on single layer graphene (SLG) seems a perfect solution in this regard, with a theoretical maximum storage capacity of 7.7 wt %. However, generating hydrogenated graphene from H2 requires extreme temperatures and pressures. Alternatively, hydrogen adatoms can easily be produced under mild conditions by the electroreduction of protons in solid/liquid systems. Graphene is electrochemically inert for this reaction, but H-chemisorption on SLG can be carried out under mild conditions via a novel Pt-electrocatalyzed "spillover-surface diffusion-chemisorption" mechanism, as we demonstrate using dynamic electrochemistry and isotopic Raman spectroscopy. The apparent surface diffusion coefficient (∼10-5 cm2 s-1), capacity (∼6.6 wt %, ∼85.7% surface coverage), and stability of hydrogen adatoms on SLG at room temperature and atmospheric pressure are significant, and they are perfectly suited for applications involving stored hydrogen atoms on graphene.

[Study on measuring host-guest ratio of inclusion compound of beta-CD-permethrin by IR].

Permethrin is one of the agrochemicals used in tea gardens currently with the characteristic of being easily decomposed in light. Permethrin with beta-cyclodextrin(CD) made into Inclusion Compound (IC) can increase its stability and reduce dosage to remain on the tea. Host/guest ratio is one of the important parameters of IC. The IC of permethrin with beta-CD was prepared by means of liquid phase method and characterized by using IR. The result of the IR proves that the characteristic absorption peaks of the host and guest are not changed by forming their IC. The host/guest ratio of the IC measured by IR is 1:1. Potassium sulfocyanate (KSCN) was chosen as an inside mark material, because it has only one strong absorption peak at 2100 cm(-1) and the peak was chosen as a quantitative peak of KSCN. The peak at 580 cm(-1) is the characteristic absorption of the wreath vibration of beta-CD and was chosen as a quantitative peak of beta-CD. KSCN and beta-CD were mixed with a certain quantity ratio and the mixture was analyzed by IR. The work curve of IR was established. A kind of new experimental method of measuring host/guest ratio of the IC was provided.