Oxidation states and quality of upper interfaces in magnetic tunnel junctions: oxygen effect on crystallization of interfaces.

In this study, we have deposited an 57Fe sensor layer at the upper interface, i.e. the interface between the oxide barrier and the upper electrode in selected magnetic tunnel junctions (MTJs), in order to perform nuclear resonant scattering with the aim of obtaining direct information on the magnetic properties and quality of this interface. This is a unique approach as it makes use of this powerful technique to give information at the atomic level, and specifically from the interface where the sensor layer is deposited. By varying sample tunnel barrier thicknesses and oxidation times in the preparation of this barrier, we have observed that longer oxidation time results in not only an increase of the magnetic hyperfine fields, but also causes an interesting crystallization and smoothing of the interface. We also observed that boron atoms diffuse away from the lower part of the upper FeCoB electrode toward the capping layer. An important observation, which has a crucial effect in tunnel magnetoresistance values, is the absence of any magnetically dead FeO layer at the interface. Another finding is that the deposition of Fe on MgO is much smoother than the deposition of MgO on Fe.

Oxidation states and the quality of lower interfaces in magnetic tunnel junctions: oxygen effect on crystallization of interfaces.

Lower interfaces in magnetic tunnel junctions (MTJs), which are the basic components in many spintronic devices such as magnetoresistive random access memories, have crucial effects on the performance of these devices. To obtain more insight into such interfaces, we have introduced an ultrathin sensor layer of (57)Fe at the interface between the lower electrode and the oxide barrier in selected MTJs. This allowed us to perform nuclear resonant scattering measurements, which provide direct information on the magnetic properties and quality of the interfaces. The application of nuclear resonant scattering to study interfaces in MTJs is a unique approach in the sense that it gives information at the atomic level, and specifically from the interface where the sensor layer is deposited. Samples with different tunnel barrier thicknesses and varied oxidation times in the preparation of this barrier have been studied. These show that oxidation can not only increase the magnetic hyperfine fields but also cause an interesting smoothing and crystallizing of the interface. Another interesting finding is the observation of boron diffusion into the lower part of the FeCoB lower electrode towards the Ta seed layer.