Biexcitons-plasmon coupling of Ag@Au hollow nanocube/MoS2 heterostructures based on scattering spectra.

The strong interaction between light and matter is one of the current research hotspots in the field of nanophotonics, and provides a suitable platform for fundamental physics research such as on nanolasers, high-precision sensing in biology, quantum communication and quantum computing. In this study, double Rabi splitting was achieved in a composite structure monolayer MoS2 and a single Ag@Au hollow nanocube (HNC) in room temperature mainly due to the two excitons in monolayer MoS2. Moreover, the tuning of the plasmon resonance peak was realized in the scattering spectrum by adjusting the thickness of the shell to ensure it matches the energy of the two excitons. Two distinct anticrossings are observed at both excitons resonances, and large double Rabi splittings (90 meV and 120 meV) are obtained successfully. The finite-difference time domain (FDTD) method was also used to simulate the scattering spectra of the nanostructures, and the simulation results were in good agreement with the experimental results. Additionally, the local electromagnetic field ability of the Ag@Au hollow HNC was proved to be stronger by calculating and comparing the mode volume of different nanoparticles. Our findings provides a good platform for the realization of strong multi-mode coupling and open up a new way to construct nanoscale photonic devices.

Severe cough and hemoptysis induced reopening of patent foramen ovale leading to significant decrease in pulmonary artery pressure in a patient with idiopathic pulmonary arterial hypertension： A case report.

Pulmonary arterial hypertension (PAH) is a perilous disease that precipitates right ventricular hypertrophy, induces right heart failure, and exerts deleterious ramifications on prognostic outcomes. The establishment of atrial communication can create a right-to-left shunt, thereby ameliorating hemodynamic parameters. Previous reports suggested that opening of a patent foramen ovale (PFO) was common in patients with severe PAH, but exhibited no discernible impact on long-term survival. We reported the case of a 39-year-old man with severe idiopathic PAH, who underwent reopening of the PFO due to severe cough and hemoptysis, followed by a marked amelioration in symptoms and a substantial decrease in pulmonary arterial pressure. The patient has survived for more than 12 years, persisting in World Health Organization functional class Ⅱ with mild PAH.

Diverse alkaloids from the aerial parts of Aconitum carmichaelii and antiproliferative activity of costemline via inhibiting SIRT1/ROCK1/P-STAT3 pathways.

Six undescribed alkaloids together with 15 known alkaloids were isolated from the aerial parts of Aconitum carmichaelii. Their structures were elucidated extensively by NMR and HRESIMS spectroscopy. The absolute configurations of N-formyllaurotetanine, and the known compounds glaucine-ß-N-oxide and glaucine-α-N-oxide were established by electronic circular dichroism (ECD) spectra. Notably, it was the discovery of rare indole alkaloids from the genus Aconitum, and biosynthetic pathway of compounds 1 and 6 was deduced. Evaluation of the antiproliferative activity of these alkaloids demonstrated that costemline exhibited significant anti-proliferation effects against HCT116, SKOV3, and A549 cells with IC50 values of 5.6, 14.2, and 6.8 µM, respectively. Costemline could also inhibit the cell invasion activity of HCT116 cells. Mechanistic studies in HCT116 cells suggested that the antiproliferative activity of costemline was attributable to SIRT1/ROCK1/P-STAT3 pathways regulation. This study revealed the potential for developing and utilizing the aerial parts of Aconitum carmichaelii.

Resonance Photoluminescence Enhancement of Monolayer MoS2 via a Plasmonic Nanowire Dimer Optical Antenna.

Two-dimensional transition-metal dichalcogenides (TMDs) such as monolayer MoS2 exhibit remarkable optical properties. However, the intrinsic absorption and emission rates of MoS2 are very low, thus severely hindering its application in electronics and photonics. Combining MoS2 with a plasmonic optical antenna is an alternative solution to enhance the emission rates of the 2D semiconductor, and this can drastically increase the photoresponsivity of the corresponding photodetector. Herein, we have constructed a plasmonic gap cavity of a nanowire dimer (NWD) system as an optical antenna to brighten the emission of MoS2 off the hot spot. Different from the conventional enhancement concept which occurred in the plasmonic hot spot, the light emission off the nanogap hot spot was thoroughly investigated. We demonstrate that this new plasmonic optical nanostructure leads to a strong enhancement due to the Purcell effect. The NWD optical antenna can trap light to the near field through a high-efficiency plasmonic gap mode (PGM); then the PL emission was enhanced drastically up to 14.5-fold due to the resonance of the plasmonic gap mode (PGM) in the NWD with the excitonic band of monolayer MoS2. Theoretical simulations reveal that this NWD can alter the efficiency of convergence and excitation, which was consistent with our experimental results. This study can provide a pathway toward enhancing and controlling PGM-enhanced light emission of TMD materials beyond the plasmonic hot spot.

In Situ Microfluidic SERS Chip for Ultrasensitive Hg2+ Sensing Based on I--Functionalized Silver Aggregates.

Mercury(II) ions are causing serious environmental pollution and health damage. Developing a simple, rapid, and sensitive sensor for Hg2+ detection is of great significance. Herein, we demonstrate an I--functionalized surface-enhanced Raman scattering (SERS) substrate for rapid and sensitive Hg2+ sensing on a highly integrated microfluidic platform. Based on the combination reaction between I- and Hg2+, the Hg2+ sensing is achieved via the SERS intensity "turn-off" strategy, where HgI2 precipitation is formed on an SERS substrate interface, dissociating the Raman reporters that coadsorbed with I-. Owing to the strong binding constant between I- and Hg2+, our I--functionalized substrate demonstrates a very fast sensing response (∼150 s). Through reliable in situ SERS detection, a robust calibration curve between the "turn-off" signal and "lgC" is obtained in a broad concentration range of 10-9 to 10-13 M. Additionally, the detectable Hg2+ concentration can be as low as 1 fM. The good selectivity toward Hg2+ is also verified by testing about a dozen common metal ions in water, such as K+, Na+, Ca2+, Mg2+, and so forth. Furthermore, we apply the SERS sensor for real tap and lake water sample detection, and good recoveries of 113, 97, and 107% are obtained. With its advantages of high integration, simple preparation, fast response, high sensitivity, and reliability, the proposed I--functionalized SERS sensor microfluidic chip can be a promising platform for real-time and on-site Hg2+ detection in natural water.

Plasmon-driven photocatalytic properties based on the surface of gold nanostar particles.

Surface plasmon resonance (SPR) generated in gold nanoparticles can induce the conversion of p-Aminothiophenol (PATP) molecules into p,p'-dimercaptoazobenzene (DMAB) molecules by coupling reaction under the action of excitation light. Molecular detection of samples by surface enhanced Raman spectroscopy (SERS) techniques allows the study of their plasma-driven photocatalytic reaction processes. In this study, we used gold nanostars (GNS) as the substrate to study its catalytic performance and sensitivity. On this basis, catalytic substrates of gold nanospheres (GNPs) were prepared for comparison. The catalytic reactions of PATP molecules on each of the above two substrates were systematically investigated under 633 nm laser irradiation. The reduction process was subsequently observed by introducing NaBH4 solution. The results show that photocatalytic reactions can be achieved on both substrates under laser excitation at the same wavelength. However, the catalytic and reduction reaction rates on GNSs as a substrate are much faster than those of GNPs. This phenomenon may be due to the abundant nano-branched microstructures on the surface of GNSs, which will generate more and stronger local surface plasma hot spots under the irradiation of excitation light. In order to test the above hypothesis, the surface electromagnetic field distribution of two nanostructures was numerically simulated using the finite-difference time domain (FDTD) method. It is found that the star-like nanostructures not only have the same inter-particle hot spot system as the spherical nanostructures, but also have a large number of high-intensity single-particle hot spot systems arising from the abundance of branched nanostructures on their own surfaces. Compared with the spherical nanostructures, they are characterized by a dual hot spot system, which accelerates the photocatalytic reaction rate. The above experiments are of some reference significance for the in-depth study of multi-branched nanostructures and surface plasma distribution properties and their applications.

Plasma-Driven Photocatalysis Based on Gold Nanoporous Arrays.

Various effects caused by surface plasmons including enhanced electromagnetic field, local heating, and excited electrons/holes can not only redistribute the electromagnetic field in the time domain and space but also redistribute the excited carriers and drive chemical reactions. In this study, firstly, an Au nanoporous array photocatalyst with the arrayed gauge was prepared by means of the anodic alumina template. Then, the formation of 4,4'-dimercaptoazobenzene (DMAB) by the surface plasmon-driven photocatalysis under 633 nm laser irradiation was investigated by means of Raman spectroscopy using aminothiophenol (PATP) as a probe molecule on gold nananoporous arrays. In addition, sodium borohydride was introduced in situ to realize the reverse photocatalytic reaction driven by the surface plasma. With the help of FDTD software, the plasma distribution characteristics on the surface of Au nanoporous arrays were simulated and analyzed. Through this practical method, it is expected to draw specific graphics, letters, and Chinese characters on the micro/nano scale, and realize the functions of graphics drawing, information encryption, reading, and erasing on the micro/nano scale.

Graphene/SnS2 van der Waals Photodetector with High Photoresponsivity and High Photodetectivity for Broadband 365-2240 nm Detection.

The fabrication of graphene/SnS2 van der Waals photodetectors and their photoelectrical properties are systematically investigated. It was found that a dry transferred graphene/SnS2 van der Waals heterostructure had a broadband sensing range from ultraviolet (365 nm) to near-infrared (2.24 µm) and respective improved responsivities and photodetectivities of 7.7 × 103 A/W and 8.9 × 1013 jones at 470 nm and 2 A/W and 1.8 × 1010 jones at 1064 nm. Moreover, positive and negative photoconductance effects were observed when the photodetectors were illuminated by photon sources with energies greater and smaller than the bandgap of SnS2, respectively. The photoresponsivity (R) versus incident power density (P) follows the empirical law R ∝ Pinß, with ß > -1 for positive photoconductance effects and ß < -1 for negative photoconductance effects. On the basis of the Fowler-Nordheim tunneling model and a Poisson and drift-diffusion simulation, we show quantitatively that the barrier height and barrier width of the heterostructure photodetector could be controlled by a laser and an external electrical field through a photogating effect generated by carriers trapped at the interface, which could be used to tune the separation and transport of photogenerated carriers. Our results may be useful for the design of high performance van der Waals heterojunction photodetectors.

Giant gauge factor of Van der Waals material based strain sensors.

There is an emergent demand for high-flexibility, high-sensitivity and low-power strain gauges capable of sensing small deformations and vibrations in extreme conditions. Enhancing the gauge factor remains one of the greatest challenges for strain sensors. This is typically limited to below 300 and set when the sensor is fabricated. We report a strategy to tune and enhance the gauge factor of strain sensors based on Van der Waals materials by tuning the carrier mobility and concentration through an interplay of piezoelectric and photoelectric effects. For a SnS2 sensor we report a gauge factor up to 3933, and the ability to tune it over a large range, from 23 to 3933. Results from SnS2, GaSe, GeSe, monolayer WSe2, and monolayer MoSe2 sensors suggest that this is a universal phenomenon for Van der Waals semiconductors. We also provide proof of concept demonstrations by detecting vibrations caused by sound and capturing body movements.

Charge density waves and degenerate modes in exfoliated monolayer 2H-TaS2.

Charge density waves spontaneously breaking lattice symmetry through periodic lattice distortion, and electron-electron and electron-phonon inter-actions, can lead to a new type of electronic band structure. Bulk 2H-TaS2 is an archetypal transition metal dichalcogenide supporting charge density waves with a phase transition at 75 K. Here, it is shown that charge density waves can exist in exfoliated monolayer 2H-TaS2 and the transition temperature can reach 140 K, which is much higher than that in the bulk. The degenerate breathing and wiggle modes of 2H-TaS2 originating from the periodic lattice distortion are probed by optical methods. The results open an avenue to investigating charge density wave phases in two-dimensional transition metal dichalcogenides and will be helpful for understanding and designing devices based on charge density waves.

Enhanced NO2 Sensitivity in Schottky-Contacted n-Type SnS2 Gas Sensors.

Layered materials are highly attractive in gas sensor research due to their extraordinary electronic and physicochemical properties. The development of cheaper and faster room-temperature detectors with high sensitivities especially in the parts per billion level is the main challenge in this rapidly developing field. Here, we show that sensitivity to NO2 (S) can be greatly improved by at least two orders of magnitude using an n-type electrode metal. Unconventionally for such devices, the ln(S) follows the classic Langmuir isotherm model rather than S as is for a p-type electrode metal. Excellent device sensitivities, as high as 13,000% for 9 ppm and 97% for 1 ppb NO2, are achieved with Mn electrodes at room temperature, which can be further tuned and enhanced with the application of a bias. Long-term stability, fast recovery, and strong selectivity toward NO2 are also demonstrated. Such impressive features provide a real solution for designing a practical high-performance layered material-based gas sensor.

Fracturing and Damage of 3D-Printed Materials with Two Intermittent Fissures under Compression.

The crack propagation and failure of 3D-printed samples with prefabricated K-S fissures (a kinked fissure and a straight fissure) were observed under uniaxial compression, and the strain and displacement of the sample surface were quantified by the digital image correlation (DIC) method. The experimental results show that the branch inclination angle of the kinked fissure is an important factor affecting the crack initial position, and the evolution of the strain field during the failure process of the sample can better reflect the cracking law of the internal fissures. Furthermore, two coalescence modes are classified: Mode I is a tension-shear composite failure formed by the penetration of the tension-shear composite crack; Mode II is a tensile failure that penetrates the whole samples during the failure process without rock bridge damage. In addition, the numerical simulation results were well consistent with the cracking and failure modes.

Electrical Contact Barriers between a Three-Dimensional Metal and Layered SnS2.

Field-effect transistors derived from traditional 3D semiconductors are rapidly approaching their fundamental limits. Layered semiconducting materials have emerged as promising candidates to replace restrictive 3D semiconductor materials. However, contacts between metals and layered materials deviate from Schottky-Mott behavior when determined by transport methods, while X-ray photoelectron spectroscopy measurements suggest that the contacts should be at the Schottky limit. Here, we present a systematic investigation on the influence of metal selection when electrically contacting SnS2, a layered metal dichalcogenide semiconductor with the potential to replace silicon. It is found that the electrically measured barrier height depends also weakly on the work function of the metal contacts with slopes of 0.09 and -0.34 for n-type and p-type Schottky contacts, respectively. Based on the Kirchhoff voltage law and considering a current path induced by metallic defects, we found that the Schottky barrier still follows the Schottky-Mott limits and the electrically measured barrier height mainly originates from the van der Waals gap between the metal and SnS2, and the slope depends on the magnitude of the van der Waals capacitance.

Sub-millimeter size high mobility single crystal MoSe2 monolayers synthesized by NaCl-assisted chemical vapor deposition.

Monolayer MoSe2 is a transition metal dichalcogenide with a narrow bandgap, high optical absorbance and large spin-splitting energy, giving it great promise for applications in the field of optoelectronics. Producing monolayer MoSe2 films in a reliable and scalable manner is still a challenging task as conventional chemical vapor deposition (CVD) or exfoliation based techniques are limited due to the small domains/nanosheet sizes obtained. Here, based on NaCl assisted CVD, we demonstrate the simple and stable synthesis of sub-millimeter size single-crystal MoSe2 monolayers with mobilities ranging from 38 to 8 cm2 V-1 s-1. The average mobility is 12 cm2 V-1 s-1. We further determine that the optical responsivity of monolayer MoSe2 is 42 mA W-1, with an external quantum efficiency of 8.22%.

Photoelectrical properties of graphene/doped GeSn vertical heterostructures.

GeSn is a group IV alloy material with a narrow bandgap, making it favorable for applications in sensing and imaging. However, strong surface carrier recombination is a limiting factor. To overcome this, we investigate the broadband photoelectrical properties of graphene integrated with doped GeSn, from the visible to the near infrared. It is found that photo-generated carriers can be separated and transported with a higher efficiency by the introduction of the graphene layer. Considering two contrasting arrangements of graphene on p-type and n-type GeSn films, photocurrents were suppressed in graphene/p-type GeSn heterostructures but enhanced in graphene/n-type GeSn heterostructures when compared with control samples without graphene. Moreover, the enhancement (suppression) factor increases with excitation wavelength but decreases with laser power. An enhancement factor of 4 is achieved for an excitation wavelength of 1064 nm. Compared with previous studies, it is found that our graphene/n-type GeSn based photodetectors provide a much wider photodetection range, from 532 nm to 1832 nm, and maintain comparable responsivity. Our experimental findings highlight the importance of the induced bending profile on the charge separation and provides a way to design high performance broadband photodetectors.

Preparation of antistatic epoxy resin coatings based on double comb-like quaternary ammonium salt polymers.

Two kinds of double comb-like quaternary ammonium salt polymers P(DPA-EPI) and P(DBA-EPI) with lower polarity were designed and synthesized using epichlorohydrin (EPI), di-n-propylamine (DPA) and di-n-butylamine (DBA) as raw materials. The transparent antistatic epoxy resin coatings were obtained using the two polymers as antistatic agents, respectively. Because P(DPA-EPI) and P(DBA-EPI) with good hygroscopic performance are easily dissolved in epoxy resin paints and are nearly linearly arranged in the epoxy resin paints, the obtained transparent antistatic epoxy resin coatings achieve good antistatic properties. The values of ρ s of the coatings reach 5.13 × 108 Ω sq-1 and 2.69 × 108 Ω sq-1, respectively, with a lower addition amount of polymers of only 1.0 wt%. The two antistatic epoxy resin coatings also have good durability. Compared to the epoxy resin coating, with the introduction of P(DPA-EPI) and P(DBA-EPI), the thermal stability and adhesion of the antistatic epoxy resin coatings do not change obviously, but the Rockwell hardness values slightly reduce.

Enhanced NO2 Sensing at Room Temperature with Graphene via Monodisperse Polystyrene Bead Decoration.

Graphene is a single layer of carbon atoms with a large surface-to-volume ratio, providing a large capacity gas molecule adsorption and a strong surface sensitivity. Chemical vapor deposition-grown graphene-based NO2 gas sensors typically have detection limits from 100 parts per billion (ppb) to a few parts per million (ppm), with response times over 1000 s. Numerous methods have been proposed to enhance the NO2 sensing ability of graphenes. Among them, surface decoration with metal particles and metal-oxide particles has demonstrated the potential to enhance the gas-sensing properties. Here, we show that the NO2 sensing of graphene can be also enhanced via decoration with monodisperse polymer beads. In dark conditions, the detection limit is improved from 1000 to 45 ppb after the application of polystyrene (PS) beads. With laser illumination, a detection limit of 0.5 ppb is determined. The enhanced gas sensing is due to surface plasmon polaritons excited by interference and charge transfer between the PS beads. This method opens an interesting route for the application of graphene in gas sensing.

High Selectivity Gas Sensing and Charge Transfer of SnSe2.

SnSe2 is an anisotropic binary-layered material with rich physics, which could see it used for a variety of potential applications. Here, we investigate the gas-sensing properties of SnSe2 using first-principles calculations and verify predictions using a gas sensor made of few-layer SnSe2 grown by chemical vapor deposition. Theoretical simulations indicate that electrons transfer from SnSe2 to NO2, whereas the direction of charge transfer is the opposite for NH3. Notably, a flat molecular band appears around the Fermi energy after NO2 adsorption and the induced molecular band is close to the conduction band minimum. Moreover, compared with NH3, NO2 molecules adsorbed on SnSe2 have a lower adsorption energy and a higher charge transfer value. The dynamic-sensing responses of SnSe2 sensors confirm the theoretical predictions. The good match between the theoretical prediction and experimental demonstration suggests that the underlying sensing mechanism is related to the charge transfer and induced flat band. Our results provide a guideline for designing high-performance gas sensors based on SnSe2.

Strategy for Fabricating Wafer-Scale Platinum Disulfide.

PtS2 is a newly developed group 10 2D layered material with high carrier mobility, wide band gap tunability, strongly bound excitons, symmetrical metallic and magnetic edge states, and ambient stability, making it attractive in nanoelectronic, optoelectronic, and spintronic fields. To the aim of application, a large-scale synthesis is necessary. For transition-metal dichalcogenide (TMD) compounds, a thermally assisted conversion method has been widely used to fabricate wafer-scale thin films. However, PtS2 cannot be easily synthesized using the method, as the tetragonal PtS phase is more stable. Here, we use a specified quartz part to locally increase the vapor pressure of sulfur in a chemical vapor deposition furnace and successfully extend this method for the synthesis of PtS2 thin films in a scalable and controllable manner. Moreover, the PtS and PtS2 phases can be interchangeably converted through a proposed strategy. Field-effect transistor characterization and photocurrent measurements suggest that PtS2 is an ambipolar semiconductor with a narrow band gap. Moreover, PtS2 also shows excellent gas-sensing performance with a detection limit of ∼0.4 ppb for NO2. Our work presents a relatively simple way of synthesizing PtS2 thin films and demonstrates their promise for high-performance ultrasensitive gas sensing, broadband optoelectronics, and nanoelectronics in a scalable manner. Furthermore, the proposed strategy is applicable for making other PtX2 compounds and TMDs which are compatible with modern silicon technologies.