High-Spike Barrier Photodiodes Based on 2D Te/WS2 Heterostructures.

Two-dimensional (2D) van der Waals (vdWs) heterojunctions have been actively investigated in low-power-consumption and fast-response photodiodes owing to their atomically smooth interfaces and ultrafast interfacial charge transfer. However, achieving ultralow dark current and ultrafast photoresponse in the reported photovoltaic devices remains a challenge as the large built-in electric field in a heterojunction can not only speed up photocarrier transport but also increase the minority-carrier dark current. Here, we propose a high-spike barrier photodiode that can achieve both an ultralow dark current and an ultrafast response. The device is fabricated by the Te/WS2 heterojunction, while the band alignment can transition from type-II to type-I with a high electron barrier and a large hole built-in electronic field. The high electron barrier can greatly reduce the drift current of minority carriers and the generation current of the thermal carriers, while the large built-in electronic field can still speed up the photocarrier transport. The designed Te/WS2 vdWs photodiode yields an ultralow dark current of 8 × 10-14 A and an ultrafast photoresponse of 10/13 µs. Furthermore, a high-performance visible-light imager with a pixel resolution of 100 × 40 is demonstrated using the Te/WS2 vdWs photodiode. This work provides a comprehensive understanding of designing 2D-material-based photovoltaics with excellent overall performance.

Approaching Ohmic Contacts for Ideal Monolayer MoS2 Transistors Through Sulfur-Vacancy Engineering.

Field-effect transistors (FETs) made of monolayer 2D semiconductors (e.g., MoS2 ) are among the basis of the future modern wafer chip industry. However, unusually high contact resistances at the metal-semiconductor interfaces have seriously limited the improvement of monolayer 2D semiconductor FETs so far. Here, a high-scale processable strategy is reported to achieve ohmic contact between the metal and monolayer MoS2 with a large number of sulfur vacancies (SVs) by using simple sulfur-vacancy engineering. Due to the successful doping of the contact regions by introducing SVs, the contact resistance of monolayer MoS2 FET is as low as 1.7 kΩ·µm. This low contact resistance enables high-performance MoS2 FETs with ultrahigh carrier mobility of 153 cm2 V-1 s-1 , a large on/off ratio of 4 × 109 , and high saturation current of 342 µA µm-1 . With the comprehensive investigation of different SV concentrations by adjusting the plasma duration, it is also demonstrated that the SV-increased electron doping, with its resulting reduced Schottky barrier, is the dominant factor driving enhanced electrical performance. The work provides a simple method to promote the development of industrialized atomically thin integrated circuits.

Deciphering Vacancy Defect Evolution of 2D MoS2 for Reliable Transistors.

Two-dimensional (2D) MoS2 is an excellent candidate channel material for next-generation integrated circuit (IC) transistors. However, the reliability of MoS2 is of great concern due to the serious threat of vacancy defects, such as sulfur vacancies (VS). Evaluating the impact of vacancy defects on the service reliability of MoS2 transistors is crucial, but it has always been limited by the difficulty in systematically tracking and analyzing the changes and effects of vacancy defects in the service environment. Here, a simulated initiator is established for deciphering the evolution of vacancy defects in MoS2 and their influence on the reliability of transistors. The results indicate that VS below 1.3% are isolated by slow enrichment during initiation. Over 1.3% of VS tend to enrich in pairs and over 3.5% of the enriched VS easily evolve into nanopores. The enriched VS with electron doping in the channel cause the threshold voltage (Vth) negative drift approaching 6 V, while the expanded nanopores initiate the Vth roll-off and punch-through of transistors. Finally, sulfur steam deposition has been proposed to constrain VS enrichment, and reliable MoS2 transistors are constructed. Our research provides a new method for deciphering and identifying the impact of defects.

Van der Waals-Interface-Dominated All-2D Electronics.

The interface is the device. As the feature size rapidly shrinks, silicon-based electronic devices are facing multiple challenges of material performance decrease and interface quality degradation. Ultrathin 2D materials are considered as potential candidates in future electronics by their atomically flat surfaces and excellent immunity to short-channel effects. Moreover, due to naturally terminated surfaces and weak van der Waals (vdW) interactions between layers, 2D materials can be freely stacked without the lattice matching limit to form high-quality heterostructure interfaces with arbitrary components and twist angles. Controlled interlayer band alignment and optimized interfacial carrier behavior allow all-2D electronics based on 2D vdW interfaces to exhibit more comprehensive functionality and better performance. Especially, achieving the same computing capacity of multiple conventional devices with small footprint all-2D devices is considered to be the key development direction of future electronics. Herein, the unique properties of all-2D vdW interfaces and their construction methods are systematically reviewed and the main performance contributions of different vdW interfaces in 2D electronics are summarized, respectively. Finally, the recent progress and challenges for all-2D vdW electronics are discussed, and how to improve the compatibility of 2D material devices with silicon-based industrial technology is pointed out as a critical challenge.

A van der Waals Ferroelectric Tunnel Junction for Ultrahigh-Temperature Operation Memory.

Facing the constant scaling down and thus increasingly severe self-heating effect, developing ultrathin and heat-insensitive ferroelectric devices is essential for future electronics. However, conventional ultrathin ferroelectrics and most 2D ferroelectric materials (2DFMs) are not suitable for high-temperature operation due to their low Curie temperature. Here, by using few-layer α-In2 Se3 , a special 2DFM with high Curie temperature, van der Waals (vdW) ferroelectric tunnel junction (FTJ) memories that deliver outstanding and reliable performance at both room and high temperatures are constructed. The vdW FTJs offer a large on/off ratio of 104 at room temperature and still reveal excellent on/off ratio at an ultrahigh temperature of 470 K, which will fail down other 2DFMs. Moreover, long retention and reliable cyclic endurance at high temperature are achieved, showing robust thermal stability of the vdW FTJ memory. The observations of this work demonstrate an exciting promise of α-In2 Se3 for reliable service in high temperature either from self-heating or harsh environments.

All-van-der-Waals Barrier-Free Contacts for High-Mobility Transistors.

Ultrathin 2D semiconductor devices are considered to have beyond-silicon potential but are severely troubled by the high Schottky barriers of the metal-semiconductor contacts, especially for p-type semiconductors. Due to the severe Fermi-level pinning effect and the lack of conventional semimetals with high work functions, their Schottky hole barriers are hardly removed. Here, an all-van-der-Waals barrier-free hole contact between p-type tellurene semiconductor and layered 1T'-WS2 semimetal is reported, which achieves a zero Schottky barrier height of 3 ± 9 meV and a high field-effect mobility of ≈1304 cm2 V-1 s-1 . The formation of such contacts can be attributed to the higher work function of ≈4.95 eV of the 1T'-WS2 semimetal, which is in sharp contrast with low work function (4.1-4.7 eV) of conventional semimetals. The study defines an available strategy for eliminating the Schottky barrier of metal-semiconductor contacts, facilitating 2D-semiconductor-based electronics and optoelectronics to extend Moore's law.

Coproduction of xylo-oligosaccharides and glucose from sugarcane bagasse in subcritical CO2-assisted seawater system.

Abundant seawater resources can replace the shortage of freshwater resources. The co-production of xylo-oligosaccharides and glucose from sugarcane bagasse by subcritical CO2-assisted seawater pretreatment was studied in this paper. We investigated the effects of pretreatment conditions of temperature, CO2 pressure and reaction time on the yield of xylo-oligosaccharides in subcritical CO2-assisted seawater systems. The maximum xylo-oligosaccharide yield of 68.23% was obtained at 165 °C/2 MPa/5 min. After further enzymatic hydrolysis of the solid residue, the highest glucose yield of 94.45% was obtained. In this system, there is a synergistic effect of mixed ions in seawater and CO2 to depolymerize xylan into xylo-oligosaccharides with a lower degree of polymerization. At the same time, the addition of CO2 increased the pore size and porosity of sugarcane bagasse, improved the efficiency of enzymatic hydrolysis and increased the yield of glucose. Therefore, this study provides a more environmentally friendly and sustainable process for the co-production of xylo-oligosaccharides and glucose from sugarcane bagasse, and improves the utilization of seawater resources.

Reconstructing Vanadium Oxide with Anisotropic Pathways for a Durable and Fast Aqueous K-Ion Battery.

Aqueous potassium-ion batteries are long-term pursued, due to their excellent performance and intrinsic superiority in safe, low-cost storage for portable and grid-scale applications. However, the notorious issues of K-ion battery chemistry are the inferior cycling stability and poor rate performance, due to the inevitably destabilization of the crystal structure caused by K-ions with pronouncedly large ionic radius. Here, we resolve such issues by reconstructing commercial vanadium oxide (α-V2O5) into the bronze form, i.e., δ-K0.5V2O5 (KVO) nanobelts, as cathode materials with layered structure of enlarged space and anisotropic pathways for K-ion storage. Specifically, it can deliver a high capacity as 116 mAh g-1 at the 1 C-rate, an outstanding rate capacity of 65 mAh g-1 at 50 C, and a robust cyclic stability with 88.2% capacity retention after 1,000 cycles at 1 C. When coupled with organic anode in a full-cell configuration, the KVO electrodes can output 95 mAh g-1 at 1 C and cyclic stability with 77.3% capacity retention after 20,000 cycles at 10 C. According to experimental and calculational results, the ultradurable cyclic performance is assigned to the robust structural reversibility of the KVO electrode, and the ultrahigh-rate capability is attributed to the anisotropic pathways with improved electrical conductivity in KVO nanobelts. In addition, applying a 22 M KCF3SO3 water-in-salt electrolyte can impede the dissolving issues of the KVO electrode and further stabilize the battery cyclic performance. Lastly, the as-designed AKIBs can operate with superior low-temperature adaptivity even at -30 °C. Overall, the KVO electrode can serve as a paradigm toward developing more suitable electrode materials for high-performance AKIBs.

Molecule-Upgraded van der Waals Contacts for Schottky-Barrier-Free Electronics.

The applications of any ultrathin semiconductor device are inseparable from high-quality metal-semiconductor contacts with designed Schottky barriers. Building van der Waals (vdWs) contacts of 2D semiconductors represents an advanced strategy of lowering the Schottky barrier height by reducing interface states, but will finally fail at the theoretical minimum barrier due to the inevitable energy difference between the semiconductor electron affinity and the metal work function. Here, an effective molecule optimization strategy is reported to upgrade the general vdWs contacts, achieving near-zero Schottky barriers and creating high-performance electronic devices. The molecule treatment can induce the defect healing effect in p-type semiconductors and further enhance the hole density, leading to an effectively thinned Schottky barrier width and improved carrier interface transmission efficiency. With an ultrathin Schottky barrier width of ≈2.17 nm and outstanding contact resistance of ≈9 kΩ µm in the optimized Au/WSe2 contacts, an ultrahigh field-effect mobility of ≈148 cm2  V-1 s-1 in chemical vapor deposition grown WSe2 flakes is achieved. Unlike conventional chemical treatments, this molecule upgradation strategy leaves no residue and displays a high-temperature stability at >200 °C. Furthermore, the Schottky barrier optimization is generalized to other metal-semiconductor contacts, including 1T-PtSe2 /WSe2 , 1T'-MoTe2 /WSe2 , 2H-NbS2 /WSe2 , and Au/PdSe2 , defining a simple, universal, and scalable method to minimize contact resistance.

Direct Charge Trapping Multilevel Memory with Graphdiyne/MoS2 Van der Waals Heterostructure.

Direct charge trapping memory, a new concept memory without any dielectric, has begun to attract attention. However, such memory is still at the incipient stage, of which the charge-trapping capability depends on localized electronic states that originated from the limited surface functional groups. To further advance such memory, a material with rich hybrid states is highly desired. Here, a van der Waals heterostructure design is proposed utilizing the 2D graphdiyne (GDY) which possesses abundant hybrid states with different chemical groups. In order to form the desirable van der Waals coupling, the plasma etching method is used to rapidly achieve the ultrathin 2D GDY with smooth surface for the first time. With the plasma-treated 2D GDY as charge-trapping layer, a direct charge-trapping memory based on GDY/MoS2 is constructed. This bilayer memory is featured with large memory window (90 V) and high degree of modulation (on/off ratio around 8 × 107 ). Two operating mode can be achieved and data storage capability of 9 and 10 current levels can be obtained, respectively, in electronic and opto-electronic mode. This GDY/MoS2 memory introduces a novel application of GDY as rich states charge-trapping center and offers a new strategy of realizing high performance dielectric-free electronics, such as optical memories and artificial synaptic.

Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions.

The applications of any two-dimensional (2D) semiconductor devices cannot bypass the control of metal-semiconductor interfaces, which can be severely affected by complex Fermi pinning effects and defect states. Here, we report a near-ideal rectifier in the all-2D Schottky junctions composed of the 2D metal 1 T'-MoTe2 and the semiconducting monolayer MoS2. We show that the van der Waals integration of the two 2D materials can efficiently address the severe Fermi pinning effect generated by conventional metals, leading to increased Schottky barrier height. Furthermore, by healing original atom-vacancies and reducing the intrinsic defect doping in MoS2, the Schottky barrier width can be effectively enlarged by 59%. The 1 T'-MoTe2/healed-MoS2 rectifier exhibits a near-unity ideality factor of ~1.6, a rectifying ratio of >5 × 105, and high external quantum efficiency exceeding 20%. Finally, we generalize the barrier optimization strategy to other Schottky junctions, defining an alternative solution to enhance the performance of 2D-material-based electronic devices.

Hidden Vacancy Benefit in Monolayer 2D Semiconductors.

Monolayer 2D semiconductors (e.g., MoS2 ) are of considerable interest for atomically thin transistors but generally limited by insufficient carrier mobility or driving current. Minimizing the lattice defects in 2D semiconductors represents a common strategy to improve their electronic properties, but has met with limited success to date. Herein, a hidden benefit of the atomic vacancies in monolayer 2D semiconductors to push their performance limit is reported. By purposely tailoring the sulfur vacancies (SVs) to an optimum density of 4.7% in monolayer MoS2 , an unusual mobility enhancement is obtained and a record-high carrier mobility (>115 cm2 V-1 s-1 ) is achieved, realizing monolayer MoS2 transistors with an exceptional current density (>0.60 mA µm-1 ) and a record-high on/off ratio >1010 , and enabling a logic inverter with an ultrahigh voltage gain >100. The systematic transport studies reveal that the counterintuitive vacancy-enhanced transport originates from a nearest-neighbor hopping conduction model, in which an optimum SV density is essential for maximizing the charge hopping probability. Lastly, the vacancy benefit into other monolayer 2D semiconductors is further generalized; thus, a general strategy for tailoring the charge transport properties of monolayer materials is defined.

MiR-129-5p Restrains Apatinib Resistance in Human Gastric Cancer Cells Via Downregulating HOXC10.

Background: Repeated administration of apatinib has resulted in serious drug resistance in gastric cancer (GC). Previous studies showed that miR-129-5p had a low expression in GC, and homeobox gene C10 (HOXC10), a carcinogenic gene, was highly expressed in GC, while the molecular mechanism of miR-129-5p involved in apatinib resistance in GC cells is still unclear. Materials and Methods: Quantitative real-time polymerase chain reaction (qRT-PCR) was used to detect the expression levels of miR-129-5p and HOXC10 in GC tissues or cell lines. The expression levels of associated proteins were detected by Western blot. Cell counting kit-8 (CCK-8), the 3-(4,5-dimethylthiazol-2-yl)-2, 5-diphenyltetrazolium bromide (MTT), and flow cytometry assays were conducted to detect cell viability, proliferation, and apoptosis of MGC-803/AP and AGS/AP cells in vitro. The dual-luciferase reporter assay was used to verify the targeted relationship between miR-129-5p and HOXC10. The xenograft model was established to examine the effect of miR-129-5p in vivo, and the HOXC10 protein expression in tumor xenograft was assessed by immunohistochemistry. Results: MiR-129-5p had a low expression in GC tissues and apatinib-resistant cell lines, while HOXC10 was highly expressed. Meanwhile, overexpression of miR-129-5p and knockdown of HOXC10 could enhance the chemosensitivity of MGC-803/AP and AGS/AP cells. Dual-luciferase reporter assay confirmed miR-129-5p targeted HOXC10 and downregulated its expression level. MiR-129-5p inhibited proliferation and promoted apoptosis of MGC-803/AP and AGS/AP cells by downregulating HOXC10. The experiment in vivo also confirmed that miR-129-5p reduced apatinib resistance in GC cells by targetedly inhibiting HOXC10. HOXC10 was upregulated in GC tumor xenograft tissues. Conclusion: miR-129-5p restrains apatinib-resistant of GC cells by regulating HOXC10.

Atomic-Thin ZnO Sheet for Visible-Blind Ultraviolet Photodetection.

The atomic-thin 2D semiconductors have emerged as plausible candidates for future optoelectronics with higher performance in terms of the scaling process. However, currently reported 2D photodetectors still have huge shortcomings in ultraviolet and especially visible-blind wavelengths. Here, a simple and nontoxic surfactant-assisted synthesis strategy is reported for the controllable growth of atomically thin (1.5 to 4 nm) ZnO nanosheets with size ranging from 3 to 30 µm. Benefit from the short carbon chains and the water-soluble ability of sodium dodecyl sulfate (SDS), the synthesized ZnO nanosheets possess high crystal quality and clean surface, leading to good compatibility with traditional micromanufacturing technology and high sensitivity to UV light. The photodetectors constructed with ZnO demonstrate the highest responsivity (up to 2.0 × 104 A W-1 ) and detectivity (D* = 6.83 × 1014 Jones) at a visible-blind wavelength of 254 nm, and the photoresponse speed is optimized by the 400 °C annealing treatment (τR  = 3.97 s, τD  = 5.32 s), thus the 2D ZnO can serve as a promising material to fill in the gap for deep-UV photodetection. The method developed here opens a new avenue to controllably synthesize 2D nonlayered materials and accelerates their applications in high-performance optoelectronic devices.

Transcription box­3 protects human umbilical vein endothelial cells in a high­glucose environment through sirtuin 1/AKT signaling.

The increasing burden of diabetes in low and middle­income countries is attributable to both genetic and epigenetic factors. Environmental­ and lifestyle­associated changes are also considered to be important contributors to this disease. The resultant co­morbidities arising from micro­and macrovascular changes in diabetes are difficult to manage and are an economic burden. However, very little is known about the molecular mechanisms that drive this phenotype. The present study aimed to investigate the role of sirtuin 1 (SIRT1)­ and transcription box­3 (TBX­3)­mediated regulation of endothelial dysfunction, given the significance of SIRT1 in glucose metabolism and the role of TBX­3 in the maintenance of cellular proliferation, senescence and apoptosis. Following the recruitment of adult patients with and without diabetes, both SIRT1 and TBX­3 expression was confirmed to be present in the sera of the patients with diabetes and the patients without diabetes; however, both SIRT1 and TBX­3 expression levels were higher in the sera of the patients with diabetes. Human umbilical vein endothelial cells (HUVECs) were further used for in vitro studies. Using TBX­3 and SIRT1 knockdown models, the cellular responses to proliferation, migration, invasion and tube formation were investigated using an MTS, cell cycle analysis, wound healing, Transwell and tube formation assay, respectively. Western blotting was also used to determine the downstream signaling pathways involved. The genetic knockdown of TBX­3 in hyperglycemic conditions significantly decreased the cellular proliferation, migration, invasion and angiogenesis of HUVECs. It was subsequently identified that TBX­3 mediated its effects through the activation of AKT and vascular endothelial growth factor (VEGF) signaling. However, the genetic knockdown of SIRT1 in the presence of TBX­3 overexpression and glucose failed to activate the AKT and VEGF signaling pathways. In conclusion, the results of the present study suggested that SIRT1 may positively regulate TBX­3 in endothelial cells, therefore, SIRT1 and/or TBX­3 may serve as potential novel biomarkers for disease progression.

Coproduction of xylooligosaccharides and fermentable sugars from sugarcane bagasse by seawater hydrothermal pretreatment.

In this study, natural seawater without additional chemicals was selected to treat sugarcane bagasse for the production of xylooligosaccharides and glucose. This pretreatment not only more effectively conserves freshwater resources than hydrothermal pretreatment and enzymatic hydrolysis, but also decreases corrosion of the equipment relative to techniques utilizing acid and alkaline pretreatment. The maximum yield of 67.12% xylooligosaccharides (of initial xylan), including 11.49% xylobiose, 16.23% xylotriose, 23.82% xylotetraose, and 15.58% xylopentaose was obtained under mild condition (175 °C for 30 min). Moreover, greater amounts of xylotetraose were generated during seawater hydrothermal pretreatment under all conditions, likely because NaCl in seawater cut the hydrogen bonds between xylo-oligomers. In addition, 94.69% cellulose digestibility and 78.58% xylan digestibility were achieved from the solid residue with an enzyme dosage of 30 FPU/g cellulose. Results indicated that seawater hydrothermal pretreatment is a more environmentally-friendly and sustainable technique for producing xylooligosaccharides and fermentable sugars than other methods.

Co-production of xylooligosaccharides and activated carbons from Camellia oleifera shell treated by the catalysis and activation of zinc chloride.

Camellia oleifera shell (COS) is a worthy byproduct in woody edible oil production enriched in hemicellulose and lignin. This paper aims to explore the high-value transformation of COS for the production of xylooligosaccharides (XOS) with main degree of polymerization (DP) of 2-5 by the catalysis of ZnCl2. The effect of pretreatment temperature, reaction time and ZnCl2 concentration on the contents and DP distributions of XOS were analyzed. Moderate reaction conditions tended to achieve high content XOS, and the maximum value 61.38% and 14.39 g/L of XOS yield and concentration, respectively, peaked at 170 °C for 30 min using 0.5% (w/w) ZnCl2. The first time the solid residues derived from the production process of XOS were used as the precursor for the co-production of activated carbons (AC). The maximum iodine values and BET surface area were 5623.94 mg/g and 1244.46 m2/g, respectively, using 2.20 M ZnCl2 as the activating agent.

Defect-Engineered Atomically Thin MoS2 Homogeneous Electronics for Logic Inverters.

Ultrathin molybdenum disulfide (MoS2 ) presents ideal properties for building next-generation atomically thin circuitry. However, it is difficult to construct logic units of MoS2 monolayer using traditional silicon-based doping schemes, such as atomic substitution and ion implantation, as they cause lattice disruption and doping instability. An accurate and feasible electronic structure modulation strategy from defect engineering is proposed to construct homogeneous electronics for MoS2 monolayer logic inverters. By utilizing the energy-matched electron induction of the solution process, numerous pure and lattice-stable monosulfur vacancies (Vmonos ) are introduced to modulate the electronic structure of monolayer MoS2 via a shallow trapping effect. The resulting modulation effectively reduces the electronic concentration of MoS2 and improves the work function by 100 meV. Under modulation of Vmonos , an atomically thin homogenous monolayer MoS2 logic inverter with a voltage gain of 4 is successfully constructed. A brand-new and practical design route of defect modulation for 2D-based circuit development is provided.

Co-catalysis of magnesium chloride and ferrous chloride for xylo-oligosaccharides and glucose production from sugarcane bagasse.

Inorganic salt treatment is a novel, high-yield, and environmentally friendly approach for the production of xylo-oligosaccharides from Sugarcane bagasse with degree of polymerization of 2-5. A xylo-oligosaccharides yield of 53.79% was obtained with 0.1 M MgCl2 treatment at 180 °C/10 min, and 41.89% with 0.1 M FeCl2 treatment at 140 °C/30 min. The xylo-oligosaccharides yield from the co-catalysis of 0.05 M FeCl2 + 0.05 M MgCl2 reached 54.68% (29.34% xylobiose and 20.94% xylotriose) at 140 °C/30 min. The co-catalysis not only effectively improved the xylobiose and xylotriose contents but also increased the total yield of xylo-oligosaccharides under mild reaction conditions. Additionally, the glucose yield observed from the solid residue after inorganic salt treatment was 71.62% by enzymatic hydrolysis. Mg2+ and Fe2+ are essential for good human health without separation from the system, therefore, the inorganic salt treatment can be potentially applied in the co-production of xylo-oligosaccharides and glucose.