Depletion Strategies for Crystallized Layers of Two-Dimensional Nanosheets to Enhance Lithium-Ion Conductivity in Polymer Nanocomposites.

The assembly of long-range aligned structures of two-dimensional nanosheets (2DNSs) in polymer nanocomposites (PNCs) is in urgent need for the design of nanoelectronics and lightweight energy-storage materials of high conductivity for electricity or heat. These 2DNS are thin and exhibit thermal fluctuations, leading to an intricate interplay with polymers in which entropic effects can be exploited to facilitate a range of different assemblies. In molecular dynamics simulations of experimentally studied 2DNSs, we show that the layer-forming crystallization of 2DNSs is programmable by regulating the strengths and ranges of polymer-induced entropic depletion attractions between pairs of 2DNSs, as well as between single 2DNSs and a substrate surface, by exclusively tuning the temperature and size of the 2DNS. Enhancing the temperature supports the 2DNS-substrate depletion rather than crystallization of 2DNSs in the bulk, leading to crystallized layers of 2DNSs on the substrate surfaces. On the other hand, the interaction range of the 2DNS-2DNS depletion attraction extends further than the 2DNS-substrate attraction whenever the 2DNS size is well above the correlation length of the polymers, which results in a nonmonotonic dependence of the crystallization layer on the 2DNS size. It is demonstrated that the depletion-tuned crystallization layers of 2DNSs contribute to a conductive channel in which individual lithium ions (Li ions) migrate efficiently through the PNCs. This work provides statistical and dynamical insights into the balance between the 2DNS-2DNS and 2DNS-substrate depletion interactions in polymer-2DNS composites and highlights the possibilities to exploit depletion strategies in order to engineer crystallization processes of 2DNSs and thus to control electrical conductivity.

Impact of Sapphire Step Height on the Growth of Monolayer Molybdenum Disulfide.

Although the synthesis of molybdenum disulfide (MoS2) on sapphire has made a lot of progress, how the substrate surface affects the growth still needs to be further studied. Herein, the impact of the sapphire step height on the growth of monolayer MoS2 through chemical vapor deposition (CVD) is studied. The results show that MoS2 exhibits a highly oriented triangular grain on a low-step (0.44-1.54 nm) substrate but nanoribbons with a consistent orientation on a high-step (1.98-3.30 nm) substrate. Triangular grains exhibit cross-step growth, with one edge parallel to the step edge, while nanoribbons do not cross steps and possess the same orientation as the step. Scanning electron microscopy (SEM) reveals that nanoribbons are formed by splicing multiple grains, and the consistency of the orientation of these grains is demonstrated with a transmission electron microscope (TEM) and second-harmonic generation (SHG). Furthermore, our CP2K calculations, conducted using the generalized gradient approximation and the Perdew-Burke-Ernzerhof (PBE) functional with D3 (BJ) correction, show that MoS2 domains prefer to nucleate at higher steps, while climbing across a higher step is more difficult. This work not only sheds light on the growth mechanism of monolayer MoS2 but also promotes its applications in electrical, optical, and energy-related devices.

Symmetry-Engineering-Induced In-Plane Polarization Enhancement in Ta2NiS5/CrOCl van der Waals Heterostructure.

Van der Waals (vdW) interfaces can be formed via layer stacking regardless of the lattice constant or symmetry of the individual building blocks. Herein, we constructed a vdW interface of layered Ta2NiS5 and CrOCl, which exhibited remarkably enhanced in-plane anisotropy via polarized Raman spectroscopy and electrical transport measurements. Compared with pristine Ta2NiS5, the anisotropy ratio of the Raman intensities for the B2g, 2Ag, and 3Ag modes increased in the heterostructure. More importantly, the anisotropy ratios of conductivity and mobility in the heterostructure increased by one order of magnitude. Specifically speaking, the conductivity ratio changed from ~2.1 (Ta2NiS5) to ~15 (Ta2NiS5/CrOCl), while the mobility ratio changed from ~2.7 (Ta2NiS5) to ~32 (Ta2NiS5/CrOCl). Such prominent enhancement may be attributed to the symmetry reduction caused by lattice mismatch at the heterostructure interface and the introduction of strain into the Ta2NiS5. Our research provides a new perspective for enhancing artificial anisotropy physics and offers feasible guidance for future functionalized electronic devices.

Effect of Nanoscale in Situ Interface Welding on the Macroscale Thermal Conductivity of Insulating Epoxy Composites: A Multiscale Simulation Investigation.

Insulating thermally conductive polymer composites are in great demand in integrated-circuit packages, for efficient heat dissipation and to alleviative short-circuit risk. Herein, the continuous oriented hexagonal boron nitride (h-BN) frameworks (o-BN@SiC) were prepared via self-assembly and in situ chemical vapor infiltration (CVI) interface welding. The insulating o-BN@SiC/epoxy (o-BN@SiC/EP) composites exhibited enhanced thermal conductivity benefited from the CVI-SiC-welded BN-BN interface. Further, multiscale simulation, combining first-principles calculation, Monte Carlo simulation, and finite-element simulation, was performed to quantitatively reveal the effect of the welded BN-BN interface on the heat transfer of o-BN@SiC/EP composites. Phonon transmission in solders and phonon-phonon coupling of filler-solder interfaces enhanced the interfacial heat transfer between adjacent h-BN microplatelets, and the interfacial thermal resistance of the dominant BN-BN interface was decreased to only 3.83 nK·m2/W from 400 nK·m2/W, plunging by over 99%. This highly weakened interfacial thermal resistance greatly improved the heat transfer along thermal pathways and resulted in a 26% thermal conductivity enhancement of o-BN@SiC/EP composites, compared with physically contacted oriented h-BN/EP composites, at 15 vol % h-BN. This systematic multiscale simulation broke through the barrier of revealing the heat transfer mechanism of polymer composites from the nanoscale to the macroscale, which provided rational cognition about the effect of the interfacial thermal resistance between fillers on the thermal conductivity of polymer composites.

Improved Thermal Anisotropy of Multi-Layer Tungsten Telluride on Silicon Substrate.

WTe2, a low-symmetry transition metal dichalcogenide, has broad prospects in functional device applications due to its excellent physical properties. When WTe2 flake is integrated into practical device structures, its anisotropic thermal transport could be affected greatly by the substrate, which matters a lot to the energy efficiency and functional performance of the device. To investigate the effect of SiO2/Si substrate, we carried out a comparative Raman thermometry study on a 50 nm-thick supported WTe2 flake (with κzigzag = 62.17 W·m-1·K-1 and κarmchair = 32.93 W·m-1·K-1), and a suspended WTe2 flake of similar thickness (with κzigzag = 4.45 W·m-1·K-1, κarmchair = 4.10 W·m-1·K-1). The results show that the thermal anisotropy ratio of supported WTe2 flake (κzigzag/κarmchair ≈ 1.89) is about 1.7 times that of suspended WTe2 flake (κzigzag/κarmchair ≈ 1.09). Based on the low symmetry nature of the WTe2 structure, it is speculated that the factors contributing to thermal conductivity (mechanical properties and anisotropic low-frequency phonons) may have affected the thermal conductivity of WTe2 flake in an uneven manner when supported on a substrate. Our findings could contribute to the 2D anisotropy physics and thermal transport study of functional devices based on WTe2 and other low-symmetry materials, which helps solve the heat dissipation problem and optimize thermal/thermoelectric performance for practical electronic devices.

Energy Dissipation and Electrical Breakdown in Multilayer PtSe2 Electronics.

Investigating the energy dissipation in micro- and nanoscale is fundamental to improve the performance and reliability of two-dimensional (2D) electronics. Recently, 2D platinum selenide (PtSe2) has drawn extensive attention in developing next-generation functional devices due to its distinctive fusion of versatile properties. Toward practical applications of PtSe2 devices, it is essential to understand the interfacial thermal properties between PtSe2 and its substrate. Among them, the thermal boundary conductance (TBC) has played a critical role for out-of-plane heat dissipation of PtSe2 devices. Here, we identify the energy dissipation behavior of multilayer PtSe2 devices and extract the actual TBC value of the PtSe2/SiO2 interface by Raman thermometry with electrical bias. The obtained TBC value is about 8.6 MW m-2 K-1, and it belongs to the low end of as-known solid-solid interfaces, suggesting possible applications regarding thermoelectric devices or others reliant on a large temperature gradient. Furthermore, the maximum current density of the PtSe2 device determines its threshold power, which is crucial for improving device design and guiding future applications. Therefore, we explore the electrical breakdown profile of the multilayer PtSe2 device, revealing the breakdown current density of 17.7 MA cm-2 and threshold power density of 0.2 MW cm-2, which are larger than typical values for commonly used aluminum and copper. These results provide key insights into the energy dissipation of PtSe2 devices and make PtSe2 an excellent candidate for thermal confinement applications and nanometer-thin interconnects, which will benefit the development of energy-efficient functional 2D devices.

Chemical Vapor Deposition of Uniform and Large-Domain Molybdenum Disulfide Crystals on Glass/Al2O3 Substrates.

Two-dimensional molybdenum disulfide (MoS2) has attracted significant attention for next-generation electronics, flexible devices, and optical applications. Chemical vapor deposition is the most promising route for the production of large-scale, high-quality MoS2 films. Recently, the chemical vapor deposition of MoS2 films on soda-lime glass has attracted great attention due to its low cost, fast growth, and large domain size. Typically, a piece of Mo foil or graphite needs to be used as a buffer layer between the glass substrates and the CVD system to prevent the glass substrates from being fragmented. In this study, a novel method was developed for synthesizing MoS2 on glass substrates. Inert Al2O3 was used as the buffer layer and high-quality, uniform, triangular monolayer MoS2 crystals with domain sizes larger than 400 µm were obtained. To demonstrate the advantages of glass/Al2O3 substrates, a direct comparison of CVD MoS2 on glass/Mo and glass/Al2O3 substrates was performed. When Mo foil was used as the buffer layer, serried small bilayer islands and bright core centers could be observed on the MoS2 domains at the center and edges of glass substrates. As a control, uniform MoS2 crystals were obtained when Al2O3 was used as the buffer layer, both at the center and the edge of glass substrates. Raman and PL spectra were further characterized to show the merit of glass/Al2O3 substrates. In addition, the thickness of MoS2 domains was confirmed by an atomic force microscope and the uniformity of MoS2 domains was verified by Raman mapping. This work provides a novel method for CVD MoS2 growth on soda-lime glass and is helpful in realizing commercial applications of MoS2.

Fully Depleted Self-Aligned Heterosandwiched Van Der Waals Photodetectors.

Room-temperature-operating highly sensitive mid-wavelength infrared (MWIR) photodetectors are utilized in a large number of important applications, including night vision, communications, and optical radar. Many previous studies have demonstrated uncooled MWIR photodetectors using 2D narrow-bandgap semiconductors. To date, most of these works have utilized atomically thin flakes, simple van der Waals (vdW) heterostructures, or atomically thin p-n junctions as absorbers, which have difficulty in meeting the requirements for state-of-the-art MWIR photodetectors with a blackbody response. Here, a fully depleted self-aligned MoS2 -BP-MoS2 vdW heterostructure sandwiched between two electrodes is reported. This new type of photodetector exhibits competitive performance, including a high blackbody peak photoresponsivity up to 0.77 A W-1 and low noise-equivalent power of 2.0 × 10-14  W Hz-1/2 , in the MWIR region. A peak specific detectivity of 8.61 × 1010  cm Hz1/2  W-1 under blackbody radiation is achieved at room temperature in the MWIR region. Importantly, the effective detection range of the device is twice that of state-of-the-art MWIR photodetectors. Furthermore, the device presents an ultrafast response of ≈4 µs both in the visible and short-wavelength infrared bands. These results provide an ideal platform for realizing broadband and highly sensitive room-temperature MWIR photodetectors.

Controlling anisotropic thermal properties of graphene aerogel by compressive strain.

Materials with adjustable wide-ranging thermal conductivity are desired to tackle the problem of thermal management for electronic devices operating in an extended range of temperature. In this study, graphene aerogels (GAs) are fabricated and transformed from thermal insulators to thermal conductors by high-temperature annealing. The highest through-plane and in-plane thermal conductivity of annealed GA reaches 3.3 and 96 W/m·K, respectively, under 95% compressive strain. Using the annealed GA as thermal interface material leads to superior performance than commercially available products that have higher through-plane thermal conductivity in dissipating heat for high-power electronic devices (e.g., LED lamp). Furthermore, due to excellent elasticity, the thermal resistance of annealed GAs can be reversibly tuned about six-fold by compressive strain. This paves a novel venue in designing thermal management system for devices, which not only need excellent heat dissipation but also good thermal insulation at various operating environments.

Free-standing graphene aerogel with improved through-plane thermal conductivity after being annealed at high temperature.

Both high through-plane thermal conductivity and low elastic modulus can reduce thermal interface resistance, which is important for thermal interface materials. The internal porous structure of graphene aerogel (GA) makes it to have a low elastic modulus, which results in its good compressibility. Also, the network structure of GA provides thermal conducting paths, which improve the through-plane thermal conductivity of GA. Annealing GA at 3000 °C helps to remove oxygen-containing functional groups and reduces defects. This greatly improves its crystallinity, which further leads to the improvement of its through-plane thermal conductivity and it has a low modulus of 1.37Mpa. The through-plane thermal conductivity of GA annealed at 3000 °C (GA-3000) was improved as the pressure increased and got to 2.93 W/ m K at a pressure of 1.13 MPa, which is 30 times higher than other graphene-based thermal interface materials (TIMs). These discoveries offer a novel approach for preparing excellent TIMs.

Stress Effects on Temperature-Dependent In-Plane Raman Modes of Supported Monolayer Graphene Induced by Thermal Annealing.

The coupling strength between two-dimensional (2D) materials and substrate plays a vital role on thermal transport properties of 2D materials. Here we systematically investigate the influence of vacuum thermal annealing on the temperature-dependence of in-plane Raman phonon modes in monolayer graphene supported on silicon dioxide substrate via Raman spectroscopy. Intriguingly, raising the thermal annealing temperature can significantly enlarge the temperature coefficient of supported monolayer graphene. The derived temperature coefficient of G band remains mostly unchanged with thermal annealing temperature below 473 K, while it increases from -0.030 cm-1/K to -0.0602 cm-1/K with thermal annealing temperature ranging from 473 K to 773 K, suggesting the great impact of thermal annealing on thermal transport in supported monolayer graphene. Such an impact might reveal the vital role of coupling strength on phonon scattering and on the thermal transport property of supported monolayer graphene. To further interpret the thermal annealing mechanism, the compressive stress in supported monolayer graphene, which is closely related to coupling strength and is studied through the temperature-dependent Raman spectra. It is found that the variation tendency for compressive stress induced by thermal annealing is the same as that for temperature coefficient, implying the intense connection between compressive stress and thermal transport. Actually, 773 K thermal annealing can result in 2.02 GPa compressive stress on supported monolayer graphene due to the lattice mismatch of graphene and substrate. This study proposes thermal annealing as a feasible path to modulate the thermal transport in supported graphene and to design future graphene-based devices.

Effect of Substrate Types on the Structure of Vertical Graphene Prepared by Plasma-Enhanced Chemical Vapor Deposition.

Although the structure of vertical graphene (VG) is important for various applications, the growth mechanism of VG is not yet fully clear. Here, the impacts of electrical conductivity of substrate on the morphology and structure of VG prepared by plasma-enhanced chemical vapor deposition are studied by scanning electron microscopy and Raman spectroscopy. The results show that VG with greater thickness can be grown on substrate with better electrical conductivity in the same growth time. Even though longer deposition time leads to more VG, more defects might develop in VG, especially at the position furthest away from the substrates. The change of morphology and structure of VG is closely correlated with strength of electric field near the substrate surface, which offers a new approach for orderly growing of VG. The discoveries not only shed light on the growth mechanism of VG, but also are beneficial for promoting the applications of VG.

Impact of Ionic Liquids on Effectiveness of Tuning the Emissivity of Multilayer Graphene.

Multilayer graphene has been employed as a functional material for tuning the emissivity in mid- and long-infrared range, which shows great potential for various applications, such as radiative cooling and thermal camouflage. However, the stability of the multilayer graphene is not sufficient for practical applications yet. Even though it is reported that the integrity of the multilayer graphene is compromised by ion intercalation, the detailed mechanism is rather unclear. Here, a set of ionic liquids is deployed as sources of electronic charges for tuning the emissivity of multilayer graphene. It is found that the emissivity modulator using 1-ethyl-3-methylimidazolium bis[(trifluoromethyl)sulfonyl]imide ([EMIm]NTf2) as the ionic liquid provides a modulation depth of about 0.52 (i.e., about 21% larger than the best-reported value) while maintaining a reasonable device lifetime. The microscopic structures of the multilayer graphene in an operational and failure modulator are investigated by scanning electron microscopy, Raman spectroscopy, X-ray diffraction. The results indicate that the modulation depth of emissivity is negatively correlated with the initial voltage, which represents the reaction potential between the ionic liquid and graphene. Furthermore, not only the chemical reactivity but also the size of both anion and cation in the ionic liquids play important roles in maintaining stability of the modulator. Therefore, a set of criteria (e.g., low initial voltage and small size of anion and cation) is proposed to select proper ionic liquids for emissivity modulation. This not only sheds light on the underlying physics of the modulator but also promotes its practical applications.

Native Oxide Seeded Spontaneous Integration of Dielectrics on Exfoliated Black Phosphorus.

Two-dimensional (2D) semiconductors have been a central focus for next-generation electronics and optoelectronics owing to their great potential to extend the scaling limits in a silicon transistor. However, due to the lack of surface dangling bonds in most 2D semiconductors, such as graphene and transition metal dichalcogenides (TMDs), the direct growth of the high-κ film on these 2D materials via an atomic layer deposition (ALD) technique often produces dielectrics with poor quality, which hinders their integration in the modern semiconductor industry. Here, we comprehensively investigate the ALD growth of the Al2O3 layer on 2D exfoliated black phosphorus (BP). Intriguingly, we found that the 2D BP with "silicon-like" characteristics possesses a native surface oxide layer PxOy after air exposure. The PxOy-induced surface dangling bonds enable the spontaneous integration of the high-quality Al2O3 layer on the BP flake without any pretreatments to functionalize the surface. Additionally, the Al2O3 layer could effectively passivate BP to prevent its degradation in ambient conditions, which addresses the most serious problem of the BP material. Moreover, the Al2O3-encapsulated BP field-effect transistor (FET) exhibits good electrical transport performance, with a high hole mobility of ∼420 cm2 V-1 s-1 and electron mobility of ∼80 cm2 V-1 s-1. Moreover, the high-quality Al2O3 layer can also be integrated into the top-gated BP transistor and inverter. Our findings reveal the silicon-like characteristics of BP for the high-κ ALD dielectric growth technology, which promises the seamless integration of 2D BP in the modern semiconductor industry.

Thickness-Independent Energy Dissipation in Graphene Electronics.

The energy dissipation issue has become one of the greatest challenges of the modern electronic industry. Incorporating graphene into the electronic devices has been widely accepted as a promising approach to solve this issue, due to its superior carrier mobility and thermal conductivity. Here, using Raman spectroscopy and infrared thermal microscopy, we identify the energy dissipation behavior of graphene device with different thicknesses. Surprisingly, the monolayer graphene device is demonstrated to have a comparable energy dissipation efficiency per unit volume with that of a few-layer graphene device. This has overturned the traditional understanding that the energy dissipation efficiency will reduce with the decrease of functional materials dimensions. Additionally, the energy dissipation speed of the monolayer graphene device is very fast, promising for devices with high operating frequency. Our finding provides a new insight into the energy dissipation issue of two-dimensional materials devices, which will have a global effect on the development of the electronic industry.

Controlled growth of MoS2 via surface-energy alterations.

Monolayer MoS2 in triangular configurations with rich edges or high-quality uniform films are either catalytically active for the hydrogen evolution reaction or flexible for functional electronic and optoelectronic devices. Here, we have experimentally discovered that these two types of MoS2 products can be selectively synthesized on graphene or sapphire substrates, which are associated with both different adsorption energy and diffusion-energy barrier for vapor precursors during growth. Our study not only provides insights into the on-surface synthesis of high-quality MoS2 monolayers, but also can be applied to the growth of vertically-stacked and large-scale in-plane lateral MoS2-graphene heterostructures.

Near-Infrared Photoelectric Properties of Multilayer Bi2O2Se Nanofilms.

The near-infrared (NIR) photoelectric properties of multilayer Bi2O2Se nanofilms were systematically studied in this paper. Multilayer Bi2O2Se nanofilms demonstrate a sensitive photo response to NIR, including a high photoresponsivity (~ 101 A/W), a quick response time (~ 30 ms), a high external quantum efficiency (~ 20,300%), and a high detection rate (1.9 × 1010 Jones). These results show that the device based on multilayer Bi2O2Se nanofilms might have great potentials for future applications in ultrafast, highly sensitive NIR optoelectronic devices.

Correction and removal of expression of concern: Controllable 2H-to-1T' phase transition in few-layer MoTe2.

Removal of expression of concern for 'Controllable 2H-to-1T' phase transition in few-layer MoTe2' by Yuan Tan et al., Nanoscale, 2018, 10, 19964-19971.

An approach to high-throughput growth of submillimeter transition metal dichalcogenide single crystals.

High-throughput growth of large size transition metal dichalcogenide (TMD) single crystals is an important challenge for their applications in the next generation electronic and optoelectronic integration devices. Here we report the high-throughput growth of submillimeter monolayer TMD single crystals by two-stage space confined chemical vapor deposition, where the nucleation density of TMD crystals is significantly decreased for the growth of large size monolayer crystals by the space confinement effect. Moreover, high-throughput growth of submillimeter TMD crystals is also achieved by stacking the substrates along the perpendicular direction to the flow of the reaction gases. The mobilities of the TMD materials produced in this way are up to 1.2, 17.0 and 25.0 cm2 (V s)-1 for monolayer WS2, WSe2 and MoS2 single crystals, respectively. The results demonstrate that two-stage space confined growth is a highly promising method for high-throughput fabrication of high-quality submillimeter monolayer TMD single crystals, which will pave a new pathway to large-scale production of TMD-based electronic and optoelectronic devices.

Bolometric Effect in Bi2 O2 Se Photodetectors.

Bi2 O2 Se is emerging as a photosensitive functional material for optoelectronics, and its photodetection mechanism is mostly considered to be a photoconductive regime in previous reports. Here, the bolometric effect is discovered in Bi2 O2 Se photodetectors. The coexistence of photoconductive effect and bolometric effect is generally observed in multiwavelength photoresponse measurements and then confirmed with microscale local heating experiments. The unique photoresponse of Bi2 O2 Se photodetectors may arise from a change of hot electrons during temperature rises instead of photoexcited holes and electrons. Direct proof of the bolometric effect is achieved by real-time temperature tracking of Bi2 O2 Se photodetectors under time evolution after light excitation. Moreover, the Bi2 O2 Se bolometer shows a high temperature coefficient of resistance (-1.6% K-1 ), high bolometric coefficient (-31 nA K-1 ), and high bolometric responsivity (>320 A W-1 ). These findings offer a new approach to develop bolometric photodetectors based on Bi2 O2 Se layered materials.