Effect of doping and defects on the electronic properties of MoS2/WSe2 bilayer heterostructure: a first-principles study.

This work studies the effect of Nb, Mo, Re dopant, and Se vacancy in WSe2 on the electronic and optical properties of the MoS2/WSe2 bilayer heterostructure based on first-principles calculations. Our research shows that the MoS2/WSe2 bilayer heterostructure exhibits a type-II band alignment with a valence band offset (VBO) of 1.07 eV and a conduction band offset (CBO) of 1.00 eV. It also shows that different dopants or defects can considerably modulate the energy band alignment and interlayer charge transfer of the heterostructure. Owing to the orbital hybridization of the dopant atoms with other atoms and the consequent enhancement of the coupling between the two structural layers, a transition of the band alignment from type-II to type-I is realized with the Re dopant. The effect of doping and defects on the electronic properties of heterojunctions contributes to applications in high-performance optoelectronic devices.

Effect of different waste plastic modifiers on conventional asphalt performance: optimal preparation parameters determination and mechanism analysis.

The typical treatment of waste plastics has become a global environmental problem. In light of recent developments, waste plastics used as asphalt modifiers offer an efficient approach to solve this problem. This paper studied the effects of three kinds of waste plastic-modified asphalts (WPMA), with polypropylene (PP), polyethylene (PE) and ethylene-vinyl acetate copolymer (EVA) as their respective modifiers, on the conventional asphalt performance. Furthermore, an orthogonal experimental design (OED) was used to determine the preparation parameters of WPMA. Thereafter, thermogravimetric-differential scanning calorimetry (TG-DSC) and Fourier transform infrared spectroscopy (FTIR) were employed to expound the mechanism of WPMA. It was then subsequently ascertained that the optimum preparation parameters of PP-modified asphalt (PPMA) and PE-modified asphalt (PEMA) were 170 °C, 3000 rpm, and 30 min, while the optimum preparation parameters of EVA-modified asphalt (EVAMA) were 180 °C, 3000 rpm, and 30 min. In addition, WPMA displayed better high-temperature performance and are inherently more suitable for pavement in high-temperature regions. Ultimately, this study will effectively solve the disposal of waste plastic and promote the research and application of WPMA in the future.

Circulating or tissue microRNAs and extracellular vesicles as potential lung cancer biomarkers: a systematic review.

For both lung cancer patients and clinical physicians, tumor biomarkers for more efficient early diagnosis and prediction of prognosis are always wanted. Biomarkers in circulating serum, including microRNAs (miRNAs) and extracellular vesicles, hold the greatest possibilities to partially substitute for tissue biopsy. In this systematic review, studies on circulating or tissue miRNAs and extracellular vesicles as potential biomarkers for lung cancer patients were reviewed and are discussed. Furthermore, the target genes of the miRNAs indicated were identified through the miRTarBase, while the relevant biological processes and pathways of miRNAs in lung cancer were analyzed through MiRNA Enrichment Analysis and Annotation (MiEAA). In conclusion, circulating or tissue miRNAs and extracellular vesicles provide us with a window to explore strategies for diagnosing and assessing prognosis and treatment in lung cancer patients.

Anisotropically biaxial strain in non-polar (112-0) plane In x Ga1-x N/GaN layers investigated by X-ray reciprocal space mapping.

In this study, the indium composition x as well as the anisotropically biaxial strain in non-polar a-plane In x Ga1-x N on GaN is studied by X-ray diffraction (XRD) analysis. In accordance with XRD reciprocal lattice space mapping, with increasing indium composition, the maximum of the In x Ga1-x N reciprocal lattice points progressively shifts from a fully compressive strained to a fully relaxed position, then to reversed tensile strained. To fully understand the strain in the ternary alloy layers, it is helpful to grow high-quality device structures using a-plane nitrides. As the layer thickness increases, the strain of In x Ga1-x N layer releases through surface roughening and the 3D growth-mode.

Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates.

The growth of well-aligned nanorods on amorphous substrates can pave the way to fabricate large-scale and low-cost devices. In this work, we successfully prepared vertically well-aligned c-axis InN nanorods on amorphous glass substrate by metal-organic chemical vapor deposition. The products formed directly on bare glass are randomly oriented without preferential growth direction. By inserting a GaN/Ti interlayer, the nanowire alignment can be greatly improved as indicated by scanning electron microscopy and X-ray diffraction.

The immiscibility of InAlN ternary alloy.

We have used two models based on the valence force field and the regular solution model to study the immiscibility of InAlN ternary alloy, and have got the spinodal and binodal curves of InAlN. Analyzing the spinodal decomposition curves, we obtain the appropriate concentration region for the epitaxial growth of the InN-AlN pseudobinary alloy. At a temperature most common for the epitaxial growth of InAlN (1000 K), the solubility of InN is about 10%. Then we introduce the mismatch strain item into the Gibbs free energy, and the effect of different substrates is taken into consideration. Considering Si, Al2O3, InN, GaN, AlN as a substrate respectively, it is found that all the five systems are stabilized with the upper critical solution temperature largely reduced. Finally, InN and GaN are potential substrates for In-rich InAlN, while AlN and GaN substrates are recommended in the Al-rich region. Si and Al2O3 may be ideal substrates for thin InAlN film.

Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers.

We report the anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using a three-step growth method which consisted of a low temperature AlN buffer layer, followed by a high temperature AlN buffer layer and GaN growth. By introducing double AlN buffer layers, we substantially improve the crystal and optical qualities of semi-polar (11-22) GaN, and significantly reduce the density of stacking faults and dislocations. The high resolution x-ray diffraction measurement revealed that the in-plane anisotropic structural characteristics of GaN layer are azimuthal dependent. Transmission electron microscopy analysis showed that the majority of dislocations in the GaN epitaxial layer grown on m-sapphire are the mixed-type and the orientation of GaN layer was rotated 58.4° against the substrate. The room temperature photoluminescence (PL) spectra showed the PL intensity and wavelength have polarization dependence along parallel and perpendicular to the [1-100] axis (polarization degrees ~ 0.63). The realization of a high polarization semi-polar GaN would be useful to achieve III-nitride based lighting emission device for displays and backlighting.

Morphology Controlled Fabrication of InN Nanowires on Brass Substrates.

Growth of semiconductor nanowires on cheap metal substrates could pave the way to the large-scale manufacture of low-cost nanowire-based devices. In this work, we demonstrated that high density InN nanowires can be directly grown on brass substrates by metal-organic chemical vapor deposition. It was found that Zn from the brass substrates is the key factor in the formation of nanowires by restricting the lateral growth of InN. The nanowire morphology is highly dependent on the growth temperature. While at a lower growth temperature, the nanowires and the In droplets have large diameters. At the elevated growth temperature, the lateral sizes of the nanowires and the In droplets are much smaller. Moreover, the nanowire diameter can be controlled in situ by varying the temperature in the growth process. This method is very instructive to the diameter-controlled growth of nanowires of other materials.

Morphology and composition controlled growth of polar c-axis and nonpolar m-axis well-aligned ternary III-nitride nanotube arrays.

Control over the nanostructure morphology and growth orientation is in high demand for fundamental research and technological applications. Herein we report a general strategy to fabricate polar c-axis and nonpolar m-axis well-aligned III-nitride ternary nanotube arrays with controllable morphologies and compositions. By depositing AlN on the InN nanorod array templates and thermally removing the InN templates, InAlN nanotubes can be obtained. Polar c-axis and nonpolar m-axis nanotubes were formed on the c- and r-plane sapphire substrates, respectively. The nanotubes are single crystalline and highly ordered on the substrates, as revealed by X-ray diffraction, electron microscopy, and selected area electron microscopy characterization. It was found that the In droplets on top of the InN nanorods play a critical role in controlling the morphology of the nanotubes. By keeping or removing the In droplets, the obtained nanotubes exhibited both ends open or only one end open. And by varying the AlN deposition temperature, the In composition in the nanotubes can be changed from 0 to 0.29. The nanotube synthesis method is simple and can be applied to the formation of other III-nitride ternary (InGaN, and AlGaN) or quaternary (InAlGaN) alloy nanotube arrays.

[Analysis of the key factors in SCID mouse-human leukemia model].

OBJECTIVE: This study was to explore the key factors in leukemia model through the analysis of mouse with bad life state in the modeling process of leukemia so as to provide the theoretical reference for improving the success rate of modeling. METHODS: At 1 week after inoculation of leukemia cells into SCID mice, the life status and peripheral hemogram of SCID mice were tested, the bone marrow smears, splean biopsy and spleen index of mice were examined after dissecting mormal and agoned/died mice during modoling, and the examined results were compared. RESULTS: As compared with control mice, the life status of experimental mice was poor; the blood smear test showed juvenile cells, slightly more white blood cells with irregular shape and partial rupture, the lymphocytes and band cells obviously increased, the neutrophile granulocytes showed nuclear left shift; the bone marrow smears showed larger cell volume, smaller mulcoplasm, abnormal morphology of cells and cell nuclei and serious cell rapture; the spleen examination showed that the spleen diplayed enlargement and hyperemia to varying degree, the spleen index obviously increase, the spleen interstitial expansion, cell disordered arragement and irregular cell shope were observed, however there was no infiltration of leukemia cells in control and experimental mice. CONCLUSION: The mouse age, pathway of inoculating the leukemia cells, sterile condition in breading and avoiding the rejection and inflammatory response in modeling process are the key foctors influencing the modeling success.

Competitive growth mechanisms of AlN on Si (111) by MOVPE.

To improve the growth rate and crystal quality of AlN, the competitive growth mechanisms of AlN under different parameters were studied. The mass transport limited mechanism was competed with the gas-phase parasitic reaction and became dominated at low reactor pressure. The mechanism of strain relaxation at the AlN/Si interface was studied by transmission electron microscopy (TEM). Improved deposition rate in the mass-transport-limit region and increased adatom mobility were realized under extremely low reactor pressure.