RESUMO
Black arsenic phosphorus (b-AsxP1-x) is expected to be one of the primary materials for future photonic devices. However, the x-factor is randomly estimated and applied in photonic devices in current studies, rather than systematically analyzing it for a comprehensive understanding. Herein, AsxP1-x switches from a direct band gap semiconductor to an indirect band gap one at x = 0.75. AsxP1-x at x ≤ 0.25 is capable of broadband absorption, while b-AsxP1-x at x ≥ 0.75 can only absorb at specific wavelengths in the perspective of the electron energy transition. Additionally, the optoelectronic response of the integral field-effect transistor configurations constructed with b-AsxP1-x is investigated systematically as a photodetector device. The photonic response characteristics show high polarization sensitivity at x ≥ 0.75, but a typical circuit system signal at x ≤ 0.25. These results suggest that b-AsxP1-x with high concentration differences is a perfect candidate for photonic material.
