Diffraction gratings based on a multilayer silicon nitride waveguide with high upward efficiency and large effective length.

Diffraction gratings with high upward diffraction efficiency and large effective length are required for chip-scale light detection and ranging. We propose a diffraction grating based on a multilayer silicon nitride waveguide, which theoretically achieves an upward diffraction efficiency of 92%, a near-field effective length of 376 µm, and a far-field divergence angle of 0.105° at a wavelength of 850 nm. The diffraction grating has a high tolerance to process variations based on Monte Carlo analysis. When the conditions are ±5% layer thickness variation, ±50nm lithographic variation, and ±20nm wavelength drift, more than 71% of the grating samples have a diffraction efficiency higher than 80%, and 100% of the samples have an effective length larger than 200 µm (corresponding to a far-field divergence <0.2∘). Furthermore, the near-field effective length of the grating with an upward diffraction efficiency above 90% can be adjusted from hundreds of microns to centimeters by changing the etching layer thickness and the grating duty cycle. This diffraction grating has a potential application in optical sensing and imaging from visible to near-IR wavelengths.

Significant reduction of thermal conductivity in silicon nanowire arrays.

Vertically aligned single-crystal silicon nanowire arrays (SiNWs) with various lengths, surface roughnesses and porosities were fabricated with the metal-assisted chemical etching method. Using the laser flash technique and differential scanning calorimetry, we characterized the thermal conductivities of bulk SiNWs/Si/SiNWs sandwich-structured composites (SSCs) at room temperature (300 K). The results demonstrate that the thermal conductivities of SSCs notably decrease with increases in the length, surface roughness and porosity of SiNWs. Furthermore, based on the series thermal-resistance model, we calculated the thermal conductivity of porous SiNWs to be as low as 1.68 W m(-1) K(-1) at 300 K. Considering the remarkable phonon scattering from the diameter, surface roughness and porosity of SiNWs, leading to a significant reduction of the thermal conductivity, SSCs and SiNWs could be applied to high-performance thermoelectric devices.

Self-assembled growth of multi-layer graphene on planar and nano-structured substrates and its field emission properties.

Vertical multi-layer graphenes (MLGs) have been synthesized without a catalyst on planar and nano-structured substrates by using microwave plasma enhanced chemical vapor deposition. The growth of MLGs on non-carbon substrates is quite different from that on carbon-based substrates. It starts with a pre-deposition of a carbon buffer layer to achieve a homo-epitaxial growth. The nucleation and growth of MLGs was found to be strongly influenced by the surface geometry and topography of substrates. Planar substrates suitable for atom diffusion are favorable for growing large-scale MLGs, and defect-rich substrates are beneficial for quick MLG nucleation and thus the growth of densely distributed MLGs. The field emission properties of MLGs grown on planar and nano-structured substrates were studied and are found to be strongly dependent on the nature of substrates. Substrates having good conductivity and large aspect ratios such as carbon nanotubes (CNTs) have good field emission properties. The best field emission properties of MLG/CNT composites with optimal shapes were observed with a low turn-on electric field of 0.93 V µm(-1), a threshold field of 1.56 V µm(-1), a maximum emission current density of 60.72 mA cm(-2), and excellent stability.

Surface morphology-dependent photoelectrochemical properties of one-dimensional Si nanostructure arrays prepared by chemical etching.

Maximizing the optical absorption of one-dimensional Si nanostructure arrays (1DSiNSAs) is desirable for excellent performance of 1DSiNSA-based optoelectronic devices. However, a quite large surface-to-volume ratio and enhanced surface roughness are usually produced by modulation of the morphology of the 1DSiNSAs prepared in a top-down method to improve their optical absorption. Surface recombination is mainly determined by the surface characteristics and significantly affects the photogenerated carrier collection. In this paper, we systematically investigated the photoelectrochemical characteristics of 1DSiNSAs with various morphologies prepared by the metal-assisted chemical etching of Si wafers. Our results show that the saturation photocurrent density and photoresponsivity of 1DSiNSAs first increased and then gradually decreased with an increasing etching time, while the reflection spectrum was gradually suppressed to the measurable minimum. To identify the behaviors of the photoresponsivity and optical absorption of the various 1DSiNSAs, we analyzed the morphology, structure, and minority-carrier lifetime. Additionally, device physics simulations were used to confirm the significance of surface recombination. We proposed that future directions for the design of nanostructure-based optoelectronic devices should include not only strong optical absorption but also low surface carrier recombination. High-performance devices could be obtained only by balancing the requirements for light absorption and photogenerated carrier collection.

Enhanced electron field emission from carbon nanotubes irradiated by energetic C ions.

The field emission performance and structure of the vertically aligned multi-walled carbon nanotube arrays irradiated by energetic C ion with average energy of 40 keV have been investigated. During energetic C ion irradiation, the curves of emission current density versus the applied field of samples shift firstly to low applied fields when the irradiation doses are less than 9.6 x 10(16) cm(-2), and further increase of dose makes the curves reversing to a high applied field, which shows that high dose irradiation in carbon nanotube arrays makes their field emission performance worse. After energetic ion irradiation with a dose of 9.6 x 1016 cm(-2), the turn-on electric field and the threshold electric field of samples decreased from 0.80 and 1.13 V/microm to 0.67 and 0.98 V/microm respectively. Structural analysis of scanning electron microscopy, transmission electron microscopy and Raman spectroscopy indicates that the amorphous carbon nanowire/carbon nanotube hetero nano-structures have been fabricated in the C ion irradiated carbon nanotubes. The enhancement of electron field emission is due to the formation of amorphous carbon nanowires at the tip of carbon nanotube arrays, which is an electron emitting material with low work function.

Structures and field emission properties of silicon nanowire arrays implanted with energetic carbon ion beam.

Structures and field emission properties of silicon nanowire arrays (SiNWAs), which were fabricated by using of electroless-chemical etching method and post-implanted by the energetic carbon ion beam with an average energy of 20 keV at various doses, have been investigated. Structural analysis of SEM and XPS shows that SiC compound had been formed at the top of SiNWAs, and Si-C/Si composite nanostructure had been obtained. Compared to as-grown SiNWAs, the C ion implanted SiNWAs have better field emission characteristics. The turn-on field and the applied field at 100 microA/cm2 are reduced from 5.01 V/microm and 5.93 V/microm for as-grown SiNWAs to 4.45 V/microm and 5.40 V/microm for SiNWAs implanted at the dose of 1 x 10(16) cm(-2), respectively. However, large implanting amounts made serious structural damages at the top of nanowires, and impaired the field emission characteristics. The influence of energetic C ion implantation on the structures and field emission properties of SiNWAs has been discussed.

Vapor-solid growth of few-layer graphene using radio frequency sputtering deposition and its application on field emission.

The carbon nanotube (CNT) and graphene hybrid is an attractive candidate for field emission (FE) because of its unique properties, such as high conductivity, large aspect ratio of CNT, and numerous sharp edges of graphene. We report here a vapor-solid growth of few-layer graphene (FLG, less than 10 layers) on CNTs (FLG/CNT) and Si wafers using a radio frequency sputtering deposition system. Based on SEM, TEM, and Raman spectrum analyses, a defect nucleation mechanism of the FLG growth was proposed. The FE measurements indicate that the FLG/CNT hybrids have low turn-on (0.956 V/µm) and threshold fields (1.497 V/µm), large field enhancement factor (∼4398), and good stability. Excellent FE properties of the FLG/CNT hybrids make them attractive candidates as high-performance field emitters.

Field emission enhancement of Au-Si nano-particle-decorated silicon nanowires.

Au-Si nano-particle-decorated silicon nanowire arrays have been fabricated by Au film deposition on silicon nanowire array substrates and then post-thermal annealing under hydrogen atmosphere. Field emission measurements illustrated that the turn-on fields of the non-annealed Au-coated SiNWs were 6.02 to 7.51 V/µm, higher than that of the as-grown silicon nanowires, which is about 5.01 V/µm. Meanwhile, after being annealed above 650°C, Au-Si nano-particles were synthesized on the top surface of the silicon nanowire arrays and the one-dimensional Au-Si nano-particle-decorated SiNWs had a much lower turn-on field, 1.95 V/µm. The results demonstrated that annealed composite silicon nanowire array-based electron field emitters may have great advantages over many other emitters.

Structures and field emission characteristics of ion irradiated silicon nanowire arrays.

Silicon nanowire (SiNW) arrays irradiated by energetic Si ions were fabricated by metal vapor vacuum arc (MEVVA) ion implantation method. Hetero-structure of amorphous/crystalline nanowire was formed in which structure of the implanted region on the top of the nanowires was amorphous while the structure of unimplanted region on the bottom remained crystal. Field emission (FE) properties of the SiNW arrays could be improved and modulated by different implantation doses. A low turn-on field of 4.63 V/microm was observed in the SiNWs irradiated by 21 keV Si ion with a dose of 7.86 x 10(16)/cm2, and the applied field for the emission current density reaching 100 microA/cm2 is only 5.52 V/microm. The main reason for the efficient emission is attributed to the formation of amorphous SiNWs and structure defects after implantation. The ion irradiated SiNWs after post-annealing at high temperature had better FE property due to eliminating the restrain effect to electrons.

Fabrication and Properties of Ag-nanoparticles Embedded Amorphous Carbon Nanowire/CNT Heterostructures.

Carbon nanotubes were subjected to doping with an energetic Ag ion beam, and the carbon nanotubes on the top of the array were transformed into amorphous carbon nanowires with embedded Ag-nanoparticles. The field emission characteristics of these nanowires were investigated. The minimum turn-on and threshold fields were 0.68 and 1.09 V/mum, respectively, which were lower than those of the as-grown carbon nanotubes. This was probably because Ag-nanoparticles embedded in the carbon nanowires reduced the effective work function from 4.59 to 4.23 eV. Large doping amounts produced serious structural damage at the top of the nanowires and impaired the field emission characteristics.

[A comparative Raman study of carbon nanotubes allays].

A series of comparative Raman study of carbon nanotubes arrays prepared by thermal chemical vapor deposition are reported. The results suggest that the G mode and D mode of carbon nanotubes (CNTs) arrays are all downshifted as compared to that of polycrystalline graphite, and the shifted number in well-aligned CNTs arrays is more than that in misaligned CNTs arrays. Moreover, the intensity ratio ID/IG indicates the ordering in CNTs arrays. A lower ID/IG means a higher graphitization and less amorphous carbon in CNTs arrays.