Reducing metal/graphene contact resistance via N, N-dimethylacetamide-assisted clean fabrication process.

Contact resistance (RC) is of great importance for radio frequency (RF) applications of graphene, especially graphene field effect transistors (FETs) with short channel. FETs and transmission line model test structures based on chemical vapor deposition grown graphene are fabricated. The effects of employing traditional lithography solvent (Acetone) and strong solvents for photo resist, such as N, N-Dimethylacetamide (ZDMAC) and N-Methyl pyrrolidone (NMP), are systematically investigated. It was found that ZDMAC and NMP have more proficiency than acetone to remove the photo-resist residues and contaminations attached on graphene surface, enabling clean surface of graphene. However, strong solvents are found to destroy the lattice structure of graphene channel and induce defects in graphene lattice. Clean surface contributes to a significant reduction in theRCbetween graphene channel and metal electrode, and the defects introduced on graphene surface underneath metal electrodes also contribute the reduction ofRC. But defects and deformation of lattice will increase the resistance in graphene channel and lead to the compromise of device performance. To address this problem, a mix wet-chemical approach employing both acetone and ZDMAC was developed in our study to realize a 19.07% reduction ofRC, without an unacceptable mass production of defects.

Stable p-type chemical doping of graphene with reduced contact resistance by single-layer perfluorinated polymeric sulfonic acid.

Recently, graphene has led to unprecedented progress in device performance at the atom limit. A high performance of field-effect transistors requires a low graphene-metal contact resistance. However, the chemical doping methods used to tailor or improve the properties of graphene are sensitive to ambient conditions. Here, we fabricate a single-layer perfluorinated polymeric sulfonic acid (PFSA), also known as Nafion, between the graphene and the substrate as a p-type dopant. The PFSA doping method, without inducing any additional structural defects, reduces the contact resistance of graphene by ∼28.8%, which has a significant impact on practical applications. This reduction can be maintained for at least 67 days due to the extreme stability of PFSA. Effective, uniform and stable, the PFSA doping method provides an efficient way to reduce the contact resistance of graphene applications.