RESUMO
Optical properties of InAs/GaAs quantum dots in micropillar cavities emitting at 1.3 microm are studied by time-resolved microphotoluminescence. The Purcell effect is observed with an enhancement of the decay rate by a factor of two for quantum dots in resonance with the cavity mode.
Assuntos
Arsenicais/química , Gálio/química , Índio/química , Modelos Teóricos , Pontos Quânticos , Arsenicais/efeitos da radiação , Simulação por Computador , Gálio/efeitos da radiação , Índio/efeitos da radiação , Luz , Teste de Materiais , TelecomunicaçõesRESUMO
A novel light-emitting-diode structure is demonstrated, which relies on nanoscale current injection through an oxide aperture to achieve selective excitation of single InAs/GaAs quantum dots. Low-temperature electroluminescence spectra evidence discrete narrow lines around 1300 nm (line width approximately 75 microeV) at ultralow currents, which are assigned to the emission from single excitons and multiexcitons. This approach, which enables the fabrication of efficient nanoscale active devices at 1300 nm, can provide single-photon-emitting diodes for fiber-based quantum cryptography.
