Transition from photocurrent surge to resonant optical rectification for terahertz generation in p-InAs.

It has been demonstrated that the key to complete understanding of the mechanisms for terahertz (THz) generation from a p-type InAs wafer pumped by a subpicosecond Ti:sapphire amplifier lies in the dependences of the THz polarization on the azimuthal angle and polarization of the pump beam. At low enough pump intensities, photocurrent surge is the dominant mechanism for THz generation. However, the THz radiation originating from photocurrent surge is greatly reduced with increased pump intensity. Therefore, at sufficiently high pump intensities resonant optical rectification becomes the dominating mechanism for THz generation. The highest output power is measured to be 57 microW.

Differentiation of CO isotopic variants by frequency tuning a terahertz source.

The transmission spectra of two CO isotopic variants, i.e., (12)CO and (13)CO, are measured with a recently developed widely tunable THz source. The pure rotational transition lines of J=6 --> 7, 10 --> 11, 11 --> 12, 12 --> 13, and 13 --> 14 have been identified in the spectra. The transition frequencies and the rotational constant of each CO isotopic variant are also presented. Experimental results indicate that the difference of the rotational constants between the two isotopic variants can be used to reliably differentiate (12)CO and (13)CO. Compared with the measurements made by using a Fourier transform infrared spectrometer, our tunable THz source has produced approximately the same accuracies for measuring transition frequencies or determining rotational constants.

Resonant terahertz generation from InN thin films.

Highly efficient conversion from ultrafast optical pulses to their terahertz (THz) counterparts has been achieved with InN thin films. An average THz output power as high as 0.931 microW has been obtained for an average pump power of 1 W, corresponding to a normalized conversion efficiency of 190% mm(-2). Based on our measured dependences of the THz output power on pump polarization, incident angle, pump power, and InN film thickness, resonance-enhanced optical rectification is one of the most plausible mechanisms for the THz generation in the InN films.