RESUMO
In this study, we developed an ink using hexanethiol and Cu(In,Ga)Se2 microcrystals (CIGSe MCs) to make thin films via doctor blade coating. Besides, crack-free thin films were obtained by optimizing CIGSe MC powder concentration and annealing temperature. Subsequently, single-step selenization was performed with and without sodium chloride (NaCl) surface treatment by carefully tuning the temperature. A crack-free surface with densely packed grains was obtained at 500 °C after NaCl treatment. Moreover, the structural parameters of the thin film (annealed at 350 °C) were significantly modified via selenization with NaCl at 500 °C. For instance, the FWHM of the prominent (112) plane reduced from 1.44° to 0.47°, the dislocation density minimized from 13.10 to 1.40 × 1015 lines per m2, and the microstrain decreased from 4.14 to 1.35 × 10-3. Remarkably, these thin films exhibited a high mobility of 26.7 cm2 V-1 s-1 and a low resistivity of 0.03 Ω cm. As a proof of concept, solar cells were engineered with a device structure of SLG/Mo/CIGSe/CdS/i-ZnO/Al-ZnO/Ag, wherein a power conversion efficiency (PCE) of 5.74% was achieved with exceptional reproducibility. Consequently, the outcomes of this investigation revealed the impact of selenization temperature and NaCl treatment on the physical properties and PCE of hexanethiol-based crack-free CIGSe MC ink-coated absorbers, providing new insights into the groundwork of cost-effective solar cells.
RESUMO
The preparation of ultra-thin semi-transparent solar cells with potential applications in windows or transparent roofs entails several challenges due to the very small thickness of the layers involved. In particular, problems related to undesired inter-diffusion or inhomogeneities originated by incomplete coverage of the growing surfaces must be prevented. In this paper, undoped SnO2, CdS, and CdTe thin films with thickness suitable for use in ultra-thin solar cells were deposited with a radiofrequency (RF) magnetron sputtering technique onto conductive glass. Preparation conditions were found for depositing the individual layers with good surface coverage, absence of pin holes and with a relatively small growth rate adapted for the control of very small thickness. After a careful growth calibration procedure, heterostructured solar cells devices were fabricated. The influence of an additional undoped SnO2 buffer layer deposited between the conductive glass and the CdS window was studied. The incorporation of this layer led to an enhancement of both short circuit current and open circuit voltage (by 19 and 32%, respectively) without appreciable changes of other parameters. After the analysis of the cell parameters extracted from the current-voltage (I-V) curves, possible origins of these effects were found to be: Passivation effects of the SnO2/CdS interface, blocking of impurities diffusion or improvement of the band alignment.
